• Journal of information and communication convergence engineering
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• 제3권4호
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• pp.179-183
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• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.

• 폴리머
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• 제32권4호
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• pp.372-376
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• 2008

유기발광소자(OLED)에서 정공 주입층으로 사용되는 4,4',4"-tris(N-(2-naphthyl)-N-phenylamino)-triphenylamine(2-TNATA)가 전극으로 사용되는 ITO(indium tin oxide)와 홀 수송층(hole transport layer, HTL)사이에 박막으로 진공 증착되었다. 공증착에 의해 C60이 약 20 wt% 도핑된 2-TNATA:C60 층을 제조하였으며, AFM과 XRD를 이용하여 2-TNATA:C60 박막의 분자 배향성 및 토폴로지를 관찰하였다. 또한, 다층 소자의 J-V, L-V 및 전류 효율 특성이 고찰되었다. C60은 분자 배향성을 가지고 있으나, 2-TNATA:C60 박막은 C60 분자의 균일한 분산에 의해 분자 배향성이 확인되지 않았다. C60의 도핑에 의해서 2-TNATA 박막이 더욱 조밀해지고 균일해지는 것을 확인하였으며, 이로 인하며 박막 내의 전류 밀도가 증가됨을 확인하였다. 2-TNATA:C60 하이브리드 박막을 이용하여 ITO/2-TNATA:C60/NPD/$Alq_3$/LiF/Al 다층 소자를 제조하였을 때 소자의 휘도가 향상되었으며 소자 효율도 약 4.7에서 약 6.7 cd/A로 증가하였다.

• 공업화학
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• 제26권6호
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• pp.640-647
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• 2015

투명 전극의 응용분야가 확대되고 시장의 규모가 커짐에 따라 기존 투명 전극 재료인 ITO (Indium Tin Oxide)를 대체할 차세대 투명전극의 개발에 관심이 집중되고 있다. 다양한 후보군 중에서도 대표적인 전도성 고분자인 PEDOT : PSS [poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonate)]는 기계적 유연성을 갖고 있으면서도 소재와 공정 상의 가격 경쟁력이 크기 때문에 미래 소자 구현을 위한 투명전극 재료로 주목을 받고 있으며, 현재 PEDOT : PSS의 전기전도도 수준을 ITO나 금속의 수준으로 향상시키기 위해 다양한 화학적/물리적 처리를 통한 기능성 향상에 많은 연구가 진행 중이다. 본 총설에서는 전도성 고분자의 전기 전도도를 향상시키기 위한 다양한 공정 기술에 대한 연구 현황을 짚어보고자 한다. 대표적으로 유기용매, 이온성 액체, 계면활성제 등과 같은 첨가제와 박막에 대한 산 처리 공정, 물리적 인장을 통한 전기전도도 향상 연구를 들 수 있다. 또한 이러한 공정을 적용하여 전도성 고분자 투명 전극을 전자 및 에너지 소자에 응용한 사례도 간략히 소개하고자 한다.

• 대한화학회지
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• 제41권3호
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• pp.144-149
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• 1997

N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)를 정공수송층으로, squarylium색소를 발광제로, 액정성 폴리머를 TPD의 matrix로 사용하여 electroluminescence(EL) 소자를 제작하였다. ITO 투명전극과 Mg 전극을 각각 홀주입, 전자주입 전극으로 사용하였다. Polymer/TPD 농도를 0.005 wt%로 하여 spin coating법으로 소자를 제작하였을 때 가장 안전한 ELD가 얻어졌다. ITO/polymer-TPD/SQ dye/Mg 구조의 ELD는 인가전압 23 volt에서 붉은색의 발광이 나타났으며 전류는 102 mA/$cm^2$이었다.

• 한국표면공학회지
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• 제53권4호
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• pp.182-189
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• 2020

Indium tin oxide (ITO) used a transparent electrode of a photoelectric device has a low sheet resistance and a high transmittance. However, ITO is disadvantageous in that the process cost is expensive, and the process time is long. Silver nanowires (AgNWs) transparent electrodes are based on a low cost solution process. In addition, it has attracted attention as a next-generation transparent electrode material that replaces ITO because it has similar electrical and optical characteristic to ITO, it is noted as a. AgNW thin films are mainly produced by spin-coating. However, the spin-coating process has a disadvantage of high material loss. In this study, the material loss was reduced by using about 2~10 ㎕ of AgNW solution on a (25 × 25) ㎟ substrate using the shear-coating method. It was also possible to align AgNWs in the drag direction by dragging the meniscus of the solution. The electro-optical properties of the AgNW thin film were adjusted by changing the experimental parameters that the amount of AgNWs suspension, the gap between the substrate and the blade, and the coating speed. As a result, AgNW thin films with a transmittance of 90.7 % at a wavelength of 550 nm and a sheet resistance of 15 Ω/□ was deposited and exhibited similar properties to similar AgNW transparent electrodes studied by other researchers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.167-167
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• 2010

Indium tin oxide (ITO) has been widely used as transparent conductive oxides (TCOs) for transparent electrodes of various optoelectronic devices, such as liquid crystal displays (LCD) and organic light emitting diodes (OLED). However, indium has become increasingly expensive and rare because of its limited resources. In addition, ITO thin films have some problems for OLED and flexible displays, such as imperfect work function, chemical instability, and high deposition temperature. Therefore, multi-component TCO materials have been reported as anode materials. Among the various materials, IZTO thin films have been gained much attention as anode materials due to their high work function, good conductivity, high transparency and low deposition temperature. IZTO thin films with a thickness of 200nm were deposited on Corning glass substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt%, ZnO 15 wt%, SnO2 15 wt%). We investigated the electrical, optical, structural properties of IZTO thin films. As the substrate temperature is increased, the electrical properties of IZTO are improved. All IZTO thin films have good optical properties, which showed an average of transmittance over 80%. These IZTO thin films were used to fabricate organic light emitting diodes (OLEDs) as anode and the device performances studied. As a result, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• Macromolecular Research
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• 제14권1호
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• pp.38-44
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• 2006

Vacuum deposited copper phthalocyanine (CuPc) was placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in a multi-layered, organic, light-emitting diode (OLEOs). The well-stacked CuPc layer increased the stability and efficiency of the devices. Thermal annealing after CuPc deposition and magnetic field treatment during CuPc deposition were performed to obtain a stacked-CuPc layer; the former increased the stacking density of the CuPc molecules and the alignment of the CuPc film. Thermal annealing at about 100$^{circ}C$ increased the current flow through the CuPc layer by over 25$\%$. Surface roughness decreased from 4.12 to 3.65 nm and spikes were lowered at the film surface as well. However, magnetic field treatment during deposition was less effective than thermal treatment. Eventually, a higher luminescence at a given voltage was obtained when a thermally-annealed CuPc layer was placed in the present, multi-layered, ITO/CuPc/NPD/Alq3/LiF/AI devices. Thermal annealing at about 100$^{circ}C$ for 3 h produced the most efficient, multi-layered EL devices in the present study.

• 한국응용과학기술학회지
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• 제23권2호
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• pp.137-146
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• 2006

We investigated the electrochemical properties for Langmuir-Blodgett (LB) films mixed with fatty acid (8A5H) and phospholipid (DLPE, DMPC, and DPPA). LB films of 8A5H monolayer and 8A5H-phospholipid mixture were deposited using the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured using cyclic voltammetry with three-electrode system, an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode at various concentrations(0.1, 0.5, and 1.0 mol/L) of $NaClO_4$ solution. A measuring range was reduced from initial potential to -1350 mV, continuously oxidized to 1650 mV and measured to the initial point. The scan rate was 50, 100, 150 and 200 mV/s, respectively. As a result, LB films of fatty acid and phospholipid (8A5H/DLPE and DPPA) appeared irreversible process were caused by only the reduction current from the cyclic voltammogram and LB film of 8A5H-DMPC mixture was found to be caused by a reversible oxidation-reduction process.

• 한국응용과학기술학회지
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• 제22권4호
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• pp.315-322
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• 2005

We investigated the electrochemical properties for Langmuir-Blodgett (LB) films mixed with 4-octyl-4'-(5-carboxylpentamethyleneoxy)azobenzene (denoted as 8A5H) and $phospholipid(L-{\alpha}-dimyristoylphosphatidylcholine$, denoted as DMPC). LB films of 8A5H monolayer and 8A5H-DMPC were deposited by using the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by using cyclic voltammetry with a three_electrode system, an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode at various concentrations(0.1, 0.5, and 1.0mol/L) of $NaClO_4$ solution. A measuring range was reduced from initial potential to -1350mV, continuously oxidized to 1650mV and measured to the initial point. The scan rates were 50, 100, 150 and 200mV/s, respectively. As a result, LB films of 8A5H monolayer appeared irreversible process caused by only the oxidation current from the cyclic voltammogram and LB films of 8A5H-DMPC mixture were found to be caused by a reversible oxidation-reduction process.

• 한국응용과학기술학회지
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• 제20권2호
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• pp.94-100
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• 2003

We studied electrochemical characteristics of Langmuir-Blodgett(LB) films by using cyclic voltammetry with a three-electrode system. An Ag/AgCl as a reference electrode, a platinum wire as a counter electrode and LB film-coated indium tin oxide(ITO) as a working electrode were used to study electrochemical characteristics at a various concentration of $NaClO_4$ solution. LB films were reduced from initial potential to -1350 mV, continuously oxidized to l650mV and returned to the initial point. The scan rate was l00mV/s. The monolayer surface morphology of the LB film have been measured by Atomic Force Microscope(AFM). As a result, We comfirmed that the microscopic properties of LB film by AFM showed the good orientation of momolayer molecules and the thickness of monolayer was 3.5-4.lnm. The cyclic voltammograms(CV) of the ITO-coated glass showed the peak potentials for the reduction-oxidation reation. LB films of 4-octyl-4'-(5-carboxypentamethyleneoxy) azobenzene(8A5H) / L-${\alpha}$-phosphayidyl choline, dilauroyl(DLPC) seemed to be irreversible process caused by only the oxidation current from the cyclic voltammogram. The current of oxidatation increased at cyclic voltammogram by increasing 8A5H density in LB films. The diffusivity(D) of LB films increased with increasing of a 8A5H amount and was inversely proportional to the concentration of $NaClO_4$ solution.