• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.240-240
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• 2006

Thin films of poly(vinyl cinnamate) (PVCi) were prepared on indium tin oxide (ITO) glass and silicon substrates by conventional spin coating and subsequent drying process. The thicknesses of the films ranged 50-120 nm. The films' surface was treated by rubbing, ultraviolet exposure or their combinations in various ways with changing rubbing strength and exposure dose. These films were examined in detail in the aspects of surface morphology and chain orientation. Further, the anchoring and orientation behaviors of liquid crystals on the film surfaces were investigated. All the results will be discussed in detail.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.893-896
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• 2003

Plasma polymerized para-xylene (PPpX) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) were used to passivate the organic light emitting diodes (OLEDs). For OLEDs, indium tin oxide (ITO), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD), tris(8-hydroxyquinoline) aluminum $(Alq_{3})$ and aluminum (Al) were used as the anode, the hole transport layer (HTL), the emitting layer (EML) and the cathode, respectively. The OLED device with the PPpX passivation film (passivated device) showed similar electrical and optical characteristics to those of the OLED device without the PPpX passivation film (control device), indicating that the PECVD process did not degrade the performance of the OLEDs notably. The lifetime of the passivated device was two times longer than that of the control device. Passivation of OLEDs with PPpX films also suppressed the growth of dark spots. The density and size of dark spots of the passivated device were much smaller than those of the control device.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.889-892
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• 2003

Effects of $N_{2}$ plasma treatment of the Al bottom cathode on the characteristics of top emission inverted organic light emitting diodes (TEIOLEDs) were studied. TEIOLEDs were fabricated by depositing an Al bottom cathode, a tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$ emitting layer, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'diamine (TPD) hole transport layer, and an indium tin oxide (ITO) top anode sequentially. The Al bottom cathode layer was subjected to $N_{2}$ plasma treatment before deposition of the $Alq_{3}$ layer. X-ray photoelectron spectroscopy suggested that the existence of and the amount of $AIN_x$ between the $Alq_{3}$ emitting layer and the Al bottom cathode significantly affect the characteristics of TEIOLEDs. The maximum external quantum efficiency of the TEIOLED with an Ai bottom cathode subjected to $N_{2}$ plasma treatment for 30 s was about twice as high as that of the TEIOLED with an untreated Al bottom cathode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.53-56
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• 2002

The effect of $\alpha$-septithiophene (${\alpha}-7T$) layers on the organic light emitting diode(OLED) was studied. The ${\alpha}-7T$ was used for a buffer layer in OLED. Hole injection was investigated and improved emission efficiency. The OLEDs structure can be described as indium tin oxide(ITO)/ buffer layer / hole transporting layer / emitting layer / electron transporting layer / LiF / Al. The hole transporting layer were composed of N,N-diphenyl-N,N-di(3-methylphenyl)-1,1-biphenyl-4,4-diamine(TPD), and N,N-di(naphthalene-1-ly)-N,N-diphenyl-benzidine( ${\alpha}$-NPD). The emitting layer, and electron transporting layer consist of tris(8-hydroxyquinolinato) aluminum($Alq_3$). All organic layer were deposited at a background pressure of less than $10^{-6}$ torr using ultra high vacuum (UHV) system. The ${\alpha}-7T$ layer can substitute the hole blocking layer, and improve hole injection properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.45-45
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• 2008

In recent years, new materials and technology has been developed using single-walled carbon nanotubes (SWCNTs) as an alternative to indium tin oxide (ITO) to fulfil the requirements towards novel technological drive. These technologies offer products having a broad range of conductivity, excellent transparency, neutral color tone, good adhesion, abrasion resistance as well as mechanical robustness. In addition, SWCNTs can be solution processed to replace the sophisticated vacuum techniques at high temperatures. In the present work, transparent conducting films were fabricated from the purified SWCNTs. Dispersion of purified SWCNTs was accomplished in 1,2-dichlorobenzene without using surfactants or polymers following ultrasonic process. We achieved coating of nanotubes film on poly ether suiphone (PES) for an average sheet resistance ~110 ${\Omega}/{\Box}$ of optical transmittance 80% at 550 nm. Conventional spin coating method was followed to fabricate films from the purified and dispersed nanotubes solution. The results will be presented.

• Journal of Electrochemical Science and Technology
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• v.9 no.2
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• pp.118-125
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• 2018

Herein we report on the selective synthesis and direct growth of nanostructures using an aqueous chemical growth route. Specifically, Al-doped ZnO (AZO) nanoflakes (NFs) are vertically grown on indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) sheets at low temperature and ambient environment. The morphological, optical, and electrical properties of the NFs are investigated as a function of the Al content. Furthermore, these AZO-NFs are integrated into perovskite solar devices as the electron transport layer (ETL) and the fabricated devices are tested for photovoltaic performance. It was determined that the doping of AZO-NFs significantly increases the performance metrics of the solar cells, mainly by increasing the short-circuit current of the devices. The observed enhancement is primarily attributed to the improved conductivity of the doped AZO-NF, which facilitates charge separation and reduces recombination. Further, our flexible solar cells fabricated through this low temperature process demonstrate an acceptable reproducibility and stability when exposed to a mechanical bending test.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.20-23
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• 2008

Organic light-emitting diodes (OLEDs) are attractive because of possible application in display with low-operating voltage, low-power consumption, self-emission and capability of multicolor emission by the selection of emissive materials. To investigated the optical effects, we studied the electrical and optical characteristics due to thickness variation of electron injection materials LiF on organic light-emitting diodes in the ITO (indium-tin-oxide)/N,N'-diphenyl-N, N'-bis(3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline) aluminum $(Alq_3)/LiF$ layer/Al device. We maintained the thicknesses of TPD and $Alq_3$ layers at 40 nm and 60 nm, respectively. The deposition rates of TPD and $Alq_3$ were in the $1.5{\AA}/s$ under a base pressure of $5{\times}10^{-6}$ Torr. It was found that luminance and luminous efficiency of the device with 0.7 nm LiF layer improve 25 times and 7 times than the device without the LiF layer, respectively.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1311-1312
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• 2008

차세대 대형 FPD(Flat Panel Display)로 각광받는 PDP(Plasma Display Panel)는 cost, 소비전력, 효율 등의 문제점이 있다. 본 연구에서는 저가격화를 실현하기 위하여 종래 사용되었던 투명전극인 ITO(Indium-Tin Oxide)전극 대신 금속(Ag) 전극만을 사용하여 공정을 간소화한 Fence 전극구조를 제안하였다. 그리고 소비전력의 감소와 효율의 향상을 위해 격벽쪽의 전극을 제거하여 방전경로상의 저항을 증가시켜 방전전류를 감소시키는 동시에 하전입자의 격벽손실을 줄이는 4-inch Test Panel을 제작하여 전기광학적 특성 실험을 하였다. 제안한 구조의 돌기길이를 변화시켜 방전개시전압, 휘도, 소비전력, 효율 등을 측정, 비교하여 power가 14%감소하여 효율을 11% 향상 시킬 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.198.2-198.2
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• 2014

We investigated change of the electronic structure, chemical states and elements ratio in graphene film by using photoelectron spectroscopy (PES). The graphene electrode has attracted considerable interest due to its possible applications in flexible organic light emitting diodes (F-OLEDs). However, to use the graphene for OLEDs, sufficient increase of work function is required, that is related with hole injection barrier. Plasma treatment is one of the most widely used method in OLEDs to increase the work function of the anode such as indium tin oxide (ITO). In this work, we used the plasma treatment, which is generated by various gas types such as O2, and Ar to increase the work function of the graphene film. From these results, we discuss the relation among the change of work function, plasma power, plasma treatment time and gas types.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.57.2-57.2
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• 2010

대표적인 투명 전극 재료indium tin oxide(ITO)의 경우, 우수한 투과성과 낮은 면저항을 기반으로 차세대 디스플레이용 전극으로 각광 받고 있다. 하지만 제조 단가가 높으며 brittle 하여 유연 디스플레이에 적용이 어려우며 대면적 제조가 어렵다는 단점이 있어 이를 대체할 수 있는 새로운 물질이 필요한 실정이다. 대표적인 후보 물질로는 탄소 육각형이 서로 연결된 관 형태인 탄소나노튜브가 있으며 뛰어난 전기 전도도와 물리적 특성을 투명 전극에 적용하기 위한 연구가 활발히 진행 중이다. 본 연구에서는 탄소나노튜브 투명 전극 제조 시 잔여 분산제 제거 및 doping의 효과를 위해 수행되는 산처리 공정을 하지 않고 투명 전극의 특성을 향상 시키는 연구를 진행하였다. 제작된 박막에 압력을 인가하여 탄소나노튜브 네트워킹의 향상과 두께의 감소를 얻을 수 있었다. 실험에 사용된 탄소나노튜브는 아크 방전 공정으로 합성된 2nm의 single wall 탄소나노튜브이며 이를 분산제인 sodium dodecyl sulfate(SDS)에 분산하여 용액형태로 제작하여 사용하였다. 분산제를 제거하기 위해 탈이온수를 사용하였으며 고분자 mold를 사용하여 압력을 인가하여 그에 따른 전기적, 광학적 변화를 관찰하였다. 제조된SWCNT 박막은 four point probe measurement를 이용하여 sheet resistance를 측정하였고 UV-vis를 이용하여 투과도와 반사도 등의 광학적 특성을 측정하였다. 박막의 표면은 field emission scanning electron microscope (FESEM)과 Atomic force microscope(AFM)를 이용하여 관찰하였다.