• 제목/요약/키워드: Indium oxide

검색결과 1,235건 처리시간 0.032초

반응성 직류마그네트론 스퍼터링에 의한 ITO박막 형성에 관한 연구 (The study on formation of ITO by DC reacrive magnetron sputtering)

  • 하홍주;조정수;박정후
    • E2M - 전기 전자와 첨단 소재
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    • 제8권6호
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    • pp.699-707
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    • 1995
  • The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It has many fields of application such as Solar Cell, Liquid Crystal display, Vidicon on T.V, transparent electrical heater, selective optical filter, and a optical electric device , etc. In the recent papers on several TCO( transparent conducting oxide ) material, the study is mainly focusing on ITO(indium tin oxide) because ITO shows good results on both optical and electrical properties. Nowaday, in the development of LCD(Liquid Crystal display), the low temperature process to reduce the production cost and to deposit ITO on polymer substrate (or low melting substrate) has been demanded. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. The resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140.deg. C. is 1.6*10$\^$-4/.ohm..cm with 85% optical transmission in viaible ray.

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RF sputter를 이용하여 성장시킨 IZTO박막과 Co-sputter 방법을 이용하여 성장시킨 IAZO 박막의 급속 열처리 효과 (Rapid thermal annealing effect on electrical and optical properties of Indium Zinc Tin Oxide grown by RF sputter and Indium Aluminum Zinc Oxide grown by co-sputtering methode)

  • 박용석;김한기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.446-447
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    • 2007
  • The rapid thermal annealing effect of transparent IZTO(indium zinc oxide) and IAZO(indium alminium zinc oxide) films grown on glass substrate for solar cell or flat panel displays(FPDs) was studied. We prepared IZTO using RF magnetron sputtering and IAZO using DC co-sputtering method. Subsequently, using rapid thermal annealing(RTA) system, prepared IZTO and IAZO films were annealed at 300, 400, 500, $600^{\circ}C$ for 90sec. In addition, Electrical and optical characteristics were measured by Hall effect measurement and UV/Vis spectrometer examinations, respectively. To analyze structural properties and surface smoothness of the IZTO and IAZO films, XRD and SEM examinations were performed, respectively. It was shown that IZTO and IAZO films exhibited microcrystalline structure over $400^{\circ}C$ and amorphous structural regardless of RTA temperature, respectively.

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평판디스플레이를 위한 Indium Tin Oxide의 레이저 페터닝 (Laser Patterning of Indium Tin Oxide for Flat Panel Display)

  • 안민영;이경철;이천
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.340-343
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    • 2000
  • ITO(Indium Tin Oxide) films for transparent electrodes of FPD(Flat Panel Display) were patterned in atmosphere using laser. A pulse type(repetition rate of 10 Hz) Q-switched Nd:YAG laser which can generate the fundamental wavelength at 1064 nm or its harmonics(532, 266 nm) was used for Patterning of the ITO film. In case of using the second harmonic(532 nm) of Nd:YAG laser, the ITO film(thickness of 20 nm) was removed clearly with a laser fluence of 5.2 J/$\textrm{cm}^2$ and a beam scan speed of 200${\mu}{\textrm}{m}$/s. But the glass substrate was damaged when the laser fluence was over 5.2 J/$\textrm{cm}^2$. We discussed the etching mechanism of the ITO film using Nd:YAG laser with observation of the etching characteristics including a depths and widths of ITO films as a function of laser fluence using SEM(Scanning Electron Microscopy) and surface profiler($\alpha$-step 500).

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용액 공정으로 제작된 InGaZnO TFT의 인듐 조성비에 따른 문턱전압 변화 (Threshold voltage shift of solution processed InGaZnO thin film transistors with indium composition ratio)

  • 박기호;이득희;이동윤;주병권;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.3-3
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    • 2010
  • We investigated the influence of the indium content on the threshold voltage ($V_{th}$) shift of sol-gel-derived indium-gallium-zinc oxide (IGZO) thin film transistors (TFTs). Surplus indium composition ratio into IGZO decreases the value of $V_{th}$ of IGZO TFTs showed huge $V_{th}$ shift in the negative direction. $V_{th}$ shift decreases from 10 to -28.2V as Indium composition ratio is increased. Because the free electron density is increased according to variation of the Indium composition ratio.

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ITO 인쇄박막을 이용한 원격 감시형 위험유해물질 검출 센서 모듈 제작에 관한 연구 (A study on fabrication of HNS remote sensor module with printed ITO films)

  • 이석환;조성민;김창민;김형호;양한욱;오지은;장지호
    • Journal of Advanced Marine Engineering and Technology
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    • 제40권4호
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    • pp.325-329
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    • 2016
  • 본 연구에서는 Indium-Tin-Oxide 인쇄 박막의 원격 검출이 가능한 해양오염 방제용 센서로서의 응용 가능성에 대해 연구하였다. 우선 양질의 박막제작을 위한 바인더 비율, Indium-Tin-Oxide 중 주석 농도, 열처리 온도 등의 Indium-Tin-Oxide 인쇄박막 제작 조건을 최적화시켰다. 이를 이용하여 전기저항형 액체 센서를 제작하였고, 센서 동작을 확인하기 위하여 대기 중과 해수 중에서 저항 변화를 확인하였다. 이때 저항 변화의 원인은 전해질 속에서 표면에서 일어나는 환원반응에 의한 것으로 해석하였다. 또한 제작된 센서를 Arduino를 사용하여 작동시키고 취득한 데이터의 원격 검출이 가능함을 확인하였다.

분무열분해법(Spray Pyrolysis)에 의한 주석산화물이 도핑된 $In_2O_3$(ITO: Indium Tin Oxide)의 분말 제조에 대한 연구 (The Studies on synthesis of $SnO_2$ doped $In_2O_3$ (ITO: Indium Tin Oxide) powder by spray pyrolysis)

  • 김상헌
    • 한국응용과학기술학회지
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    • 제31권4호
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    • pp.694-702
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    • 2014
  • 마이크론 크기를 가지는 ITO(indium tin oxide) 입자들은 인듐과 틴의 수용성 전구체들과 유기 첨가제를 분무 열분해하여 얻었다. 유기 첨가제로서는 에틸렌글리콜과 시트르산을 이용하였다. 분무 열분해 시 에틸렌글리콜과 시트르산과 같은 유기첨가제를 첨가하지 않고 얻어진 ITO 입자들은 구형이며 속이 꽉찬 형태를 가지는데 비해 유기 첨가제를 첨가하여 분무 열분해를 하면 얻어지는 ITO 입자들은 유기 첨가제의 양이 증가 할수록 껍질이 얇고 다공성이 증대된 중공 입자가 얻어진다. 유기첨가제를 첨가하지 않고 분무 열분해를 통해 얻어지는 마이크론 크기를 가지는 ITO는 $700^{\circ}C$에서 두 시간 동안의 후소성과 24 시간동안의 습식 볼밀링에 의해 나노 크기의 ITO로 전환되지 않으나, 유기첨가제를 첨가하고 분무 열분해를 통해 얻어지는 마이크론 크기를 가지는 ITO는 $700^{\circ}C$에서 두 시간 동안의 후소성과 24 시간 동안의 습식 볼밀링에 의해 나노 크기의 ITO로 쉽게 전환되었다. 응집된 나노 크기의 ITO의 일차 입자의 크기를 Debye-Scherrer 식에 의해 계산하였고 ITO 입자를 압축하여 만든 펠렛의 표면저항을 측정하였다.

ITO 기판의 산소 플라즈마 표면 처리에 의한 OLED의 전기적ㆍ광학적 특성에 관한 연구 (A Study on ElectricalㆍOptical Properties of Organic Light Emitting Diode by Oxygen Plasma Surface Treatment of Indium-Tin-Oxide Substrates)

  • 양기성;김병상;김두석;신훈규;권영수
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권1호
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    • pp.8-12
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    • 2005
  • Indium tin oxide(ITO) surface treated by Oxygen plasma has been in situ analyzed using XPS(X-ray Photoelectron Spectroscopy) and EDS(Energy Dispersive Spectroscopy), to investigate the relations between the properties of the ITO surface and the properties of OLED(Organic Light Emitting Diode). We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by AFM(Atomic Force Microscope). We fabricated OLED using substrate that was treated optimum ITO surface. The plasma treatment of the ITO surface lowered the operating voltage of the OLED. We have obtained an improvement of luminance and decrease of turn-on voltage.

Fabrication and Characteristics of Indium Tin Oxide Films on CR39 Substrate for OTFT

  • Kwon, Sung-Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제7권5호
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    • pp.267-270
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    • 2006
  • The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

연속흐름 중합효소연쇄반응칩 제작을 위한 인듐 산화막 전극의 특성분석 (Characteristics of Indium-Tin-Oxide Electrode for Continuous-flow PCR Chip)

  • 정승룡;김준혁;이인제;강치중;김용상
    • 전기학회논문지
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    • 제56권3호
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    • pp.561-565
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    • 2007
  • We propose glass and PDMS (polydimethylsiloxane) chips for DNA amplification with continuous-flow PCR (polymerase chain reaction). The PDMS microchannel was fabricated using a negative molding method for sample injection. Three heaters and sensors of ITO (indium-tin-oxide) thin films were fabricated on glass chip. ITO heaters and sensors were calibrated accurately for the temperature control of the liquid flow. ITO heater generated stable heat versus applied power. ITO sensor resistance was changed linearly versus temperature increase as a RTD (resistance temperature detector) sensor. As a result, we enable precision temperature control of continuous-flow PCR chip. Using the continuous-flow PCR chip DNA plasmid pKS-GFP 720 bp was successfully amplified.

Electrochemical Immunosensor Using the Modification of an Amine-functionalized Indium Tin Oxide Electrode with Carboxylated Single-walled Carbon Nanotubes

  • Aziz, Md.Abdul;Yang, Hae-Sik
    • Bulletin of the Korean Chemical Society
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    • 제28권7호
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    • pp.1171-1174
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    • 2007
  • We have developed an electrochemical immunosensor that combines the electrocatalytic property of carbon nanotube and the low background current of indium tin oxide (ITO) electrode. A partial monolayer of carboxylated single-walled carbon nanotube (CCNT) is covalently formed on an ITO electrode modified with amine-terminated phosphonic acid. Nonspecifically adsorbed avidin on the hydrophobic sidewalls of CCNT is used to immobilize biotinylated antibody and to reduce the nonspecific binding to CCNT. The biotinylated antimouse IgG bound on avidin and the antimouse IgG conjugated with alkaline phosphatase (ALP) sandwiches a target mouse IgG. ALP catalyzes the conversion of p-aminophenyl phosphate monohydrate into p-aminophenol, which is electrocatalytically oxidized to p-quinone imine on CCNT surface. Moderate electrocatalytic electrode obtained with the combination of CCNT and ITO allows low detection limit (0.1 ng/ mL).