• 한국분말재료학회지
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• 제11권6호
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• pp.467-471
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• 2004

In order to fabricate a high density sintered body of ITO, nano-sized ITO powders were synthesized by coprecipitation methods. Aqueous solutions of indium and tin salts were mixed and coprecipitated by changing their pH. Coprecipitated ITO powders possessed 20-30 nm crystallite size and a relatively high BET value ($35m^2/g$), however, aggregation of particles were occurred. Therefore, a novel recrystallization technique was applied in order to eliminate the aggregates. The recrystallized ITO material consists of a little bit larger needlelike crystals, $20nm{\times}80nm$, and it possesses a higher BET value $(57m^{2}/g)$ compared to the plain coprecipitated material $(35m^{2}/g)$. Metastable phase formation and higher content of aggregated particles were observed in the coprecipitated materials. Densification was 95% to 98% complete after 5 hour sintering at $1500^{\circ}C$ for the recrystallized powders while densities of the coprecipitated powders were below 75%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.510-514
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 2002년도 제33차 추계학술대회
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• pp.38-40
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• 2002

• 센서학회지
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• 제11권4호
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• pp.224-229
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• 2002

• 한국자원리싸이클링학회:학술대회논문집
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• 한국자원리싸이클링학회 2005년도 춘계임시총회 및 제25회 학술발표대회
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• pp.203-205
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• 2005

• 전기전자학회논문지
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• 제20권2호
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• pp.171-173
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• 2016

본 연구에서는 휴대용 온열기의 에너지 효율을 향상시키기 위하여 indium tin oxide (ITO) 나노입자 페이스트와 PDMS를 이용하여 PDMS/ITO 나노입자 박막 면상발열체를 제작하였고, ITO 나노입자 박막 면상발열체와 PDMS/ITO 나노입자 면상발열체의 온도 유지특성 및 소비전력량을 분석하였다. PDMS층의 낮은 열전도도로 PDMS/ITO 나노입자 박막 면상발열체의 온도유지시간이 ITO 나노입자 박막 면상발열체에 비해 1.5배 증가하였으며, 소비 전력량은 35% 절감되었다.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.752-758
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• 2010

The etching characteristics of indium tin oxide (ITO) thin films in an $O_2/BCl_3/Ar$ plasma were investigated. The etch rate of ITO thin films increased with increasing $O_2$ content from 0 to 2 sccm in $BCl_3$/Ar plasma, whereas that of ITO decreased with increasing $O_2$ content from 2 sccm to 6 sccm in $BCl_3$/Ar plasma. The maximum etch rate of 65.9 nm/m in for the ITO thin films was obtained at 2 sccm $O_2$ addition. The etch conditions were the RF power of 500 W, the bias power of 200 W, the process pressure of 15 mTorr, and the substrate temperature of $40^{\circ}C$. The analysis of x-ray photo electron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of ITO thin films and etch species.

• Transactions on Electrical and Electronic Materials
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• 제14권4호
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• pp.216-220
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• 2013

The etching characteristics of indium zinc oxide (IZO) in $Cl_2/Ar$ plasma were investigated, including the etch rate and selectivity of IZO. The IZO etch rate showed non-monotonic behavior with increasing $Cl_2$ fraction in the $Cl_2/Ar$ plasma, and with increasing source power, bias power, and process pressure. In the $Cl_2/Ar$ (75:25%) gas mixture, a maximum IZO etch rate of 87.6 nm/min and etch selectivity of 1.09 for IZO to $SiO_2$ were obtained. Owing to the relatively low volatility of the by-products formation, ion bombardment was required, in addition to physical sputtering, to obtain high IZO etch rates. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. These data suggested that the IZO etch mechanism was ion-enhanced chemical etching.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.367-367
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• 2013

Commercial applications of indium tin oxide (ITO) can be separated into two useful areas. As it is perceived to bear electrical properties and optical transparency at once, its chance to apply to promising fields, usually for an optical device, gets greater in the passing time. ITO is one of the transparent conducting oxides (TCO), and required to carry the relative resistance less than $10^{-3}{\Omega}$/cm and transmittances over 80 % in the visible wavelength of light. Because ITO has considerable refractive index, there exist applications for anti-reflection coatings. Anti-reflection properties require gradual change in refractive index from films to air. Such changes are obtained from film density or nano-clustered fractional void. Glancing angle deposition (GLAD) method is a well known process for adjusting nanostructure of the films. From its shadowing effects, GLAD helps to deposit well-controlled porous films effectively. In this study, we are comparing the reference sample to samples coated with controlled ITO multilayer accumulated by an e-beam evaporation system. At first, the single ITO layer samples are prepared to decide refractive index with ellipsometry. Afterwards, ITO multilayer samples are fabricated and fitted by multilayer ellipsometric model based on single layer data. The structural properties were measured by using atomic force microscopy (AFM), and by scanning X-ray diffraction (XRD) measurements. The ellipsometry was used to determine refractive indices and extinction coefficient. The optical transmittance of the film was investigated by using an ultraviolet-visible (UV-Vis) spectrophotometer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.605-608
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• 2008

The preparation and characteristics of flexible indium tin oxide electrodes grown on polyethylene terephthalate (PET) substrates using a specially designed roll-to-roll sputtering system for use in flexible optoelectronics In spite of low a PET substrate temperature, we can obtain the flexible electrode with a sheet resistance of 47.4 ohm/square and an average optical transmittance of 83.46 % in the green region of 500~550 nm wavelength. Both x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) analysis results showed that all flexible ITO electrodes grown on the PET substrate were an amorphous structure with a very smooth and featureless surface, regardless of the Ar/$O_2$ flow ratio due to the low substrate temperature, which is maintained by a cooling drum. In addition, the flexible ITO electrode grown on the Ar ion beam treated PET substrates showed more stable mechanical properties than the flexible ITO electrode grown on the wet cleaned PET substrate, due to an increased adhesion between the flexible ITO and the PET substrates.