• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.155-161
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• 2002

We studied the formation of nickel nano thin film that have various electrochromic properties. Nickel thin film having various thickness will apply photoelectronic devices, specially, electrochromic devices. These devices will apply lens, battery, glass and solar cell that have light, thin, simple and small that applied nanotechnology and quantum dot. Nickel thin film was coated by electrochemical method on ITO electrode. We studied the thin film properties by Cyclic voltammetry, Chronoamperometry. Impedance. X-ray diffraction analysis and Atomic force microscopy.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.43-50
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• 2007

We have investigated the electro-optical characteristics and reliability of LEDs with the Indium-Tin-Oxide (ITO) electrodes formed by different deposition methods: electron beam evaporation, sputtering, and hybrid method of electron beam evaporation and subsequent sputtering. The deposition method of the ITO electrode has significant influence on the electro-optical characteristics and reliability of LEDs. The LEDs with the ITO electrodes formed by sputtering and electron beam evaporation have problems caused by sputtering damage and increased electrical resistance, respectively, and the problems have been solved by the hybrid method.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.162-162
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• 2016

We present multifunctional indium tin oxide (ITO) thin films formed at room temperature by a normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions (NOIs). The ITO thin film possesses not only low resistivity but also high gas diffusion barrier properties even though it is deposited on a plastic substrate at room temperature without post annealing. Argon neutrals incident to substrates in the sputtering have an optimal energy window from 20 to 30 eV under the condition of blocking energetic NOIs to form ITO nano-crystalline structure. The effect of blocking energetic NOIs and argon neutrals with optimal energy make the resistivity decrease to $3.61{\times}10-4{\Omega}cm$ and the water vapor transmission rate (WVTR) of 100 nm thick ITO film drop to $3.9{\times}10-3g/(m2day)$ under environmental conditions of 90% relative humidity and 50oC, which corresponds to a value of ~ 10-5 g/(m2day) at room temperature and air conditions. The multifunctional ITO thin films with low resistivity and low gas permeability will be highly valuable for plastic electronics applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.215.2-215.2
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• 2015

We fabricated dual active layer (DAL) thin film transistors (TFTs) with indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film layers using solution process. The ITZO and IGZO layer were used as the front and back channel, respectively. In order to investigate the bias stress stability of ITZO SAL (single active layer) and ITZO/IGZO DAL TFT, a gate bias stress of 10 V was applied for 1500 s under the dark condition. The SAL TFT composed of ITZO layer shows a poor positive bias stability of ${\delta}VTH$ of 13.7 V, whereas ${\delta}VTH$ of ITZO/IGZO DAL TFT was very small as 2.6 V. In order to find out the evidence of improved bias stress stability, we calculated the total trap density NT near the channel/gate insulator interface. The calculated NT of DAL and SAL TFT were $4.59{\times}10^{11}$ and $2.03{\times}10^{11}cm^{-2}$, respectively. The reason for improved bias stress stability is due to the reduction of defect sites such as pin-hole and pores in the active layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.259-259
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• 2015

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was deposited before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. This Ni diffusion through an ITO NW was investigated by transmission electron microscope to observe the Ni-tip sitting on a single crystalline ITO NW. Meanwhile, a single crystalline ITO structure was found at bottom and body part of a single ITO NW without remaining of Ni atoms. This indicates the Ni atoms diffuse through the oxygen vacancies of ITO structure. Rapid thermal process (RTP) applied to generate an initial stage of a formation of Ni nanoparticles with variation in time periods to demonstrate the existence of an optimum condition to initiate ITO NW growth. Modulation in ITO sputtering condition was applied to verify the ITO NW growth or the ITO film growth. The Ni-assisted grown ITO layer has an improved electrical conductivity while maintaining a similar transmittance value to that of a single ITO layer. Electrically conductive and optically transparent nanowire-coated surface morphology would provide a great opportunity for various photoelectric devices.

• Journal of Sensor Science and Technology
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• v.4 no.4
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• pp.10-15
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• 1995

Organic thin film electroluminescent(EL) cells were fabricated. Their output characteristics and luminance versus voltage characteristics were measured with different work function metal electrodes. The EL structure was Indium-Tin-Oxide(ITO)/hole transport layer/emission layer(electron transport layer)/metal electrode. PMMA+TPD(0.5 wt%), MC homopolymer+TPD(0.005 wt%) and (MC/MMA) copolymer+TPD(0.005 wt%) were used as hole transport layer. Ca, Mg, Mg:Ag(10:l) and Al were used as metal electrode. I-V output showed exponential feature, and the threshold voltage of 5 volts and the luminance of over 700 $Cd/m^{2}$ at 10 volts were observed.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1328_1329
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• 2009

Nano porous indium tin oxide (ITO) powder was synthesized employing a new route sol-gel combustion hybrid method using Ketjen Black as a fuel. The nano porous ITO powder was composed of $SnCl_4$-98.0% and $In(NO_3)_3{\cdot}XH_2O$-99.999%, produce with a $NH_4OH$ with sol-gel method as a catalyst [1,2]. Crystal structures were examined by powder X-ray diffraction (XRD), and those results show shaper intensity peak at $25.6^{\circ}(2{\Theta})$ of $SnO_2$ by increased sintering temperature. A particle morphology as well as crystal size was investigated by scanning electron microscopy(FE-SEM), and the size of the nano porous powder was found to be in the range of 20~30nm. ITO films could controlled by nano porous powder at various sintering temperature in this paper[3,4]. The sol-gel combustion method was offered simple and effective route for the synthesis of nano porous ITO powder[5].

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1268_1269
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• 2009

This work shows the effect of rapid thermal annealing (RTA) on properties of indium-zinc oxide (IZO) thin films. The RTA temperatue was controlled between 300 and $500^{\circ}C$ under the two different ambient conditions such as vacuum and oxygen. Structural, optical, and electrical properties of IZO films were characterized in terms of RTA conditions. XRD and resistivity measurements showed that crystallization for IZO films occurred at an RTA temperature of about $400^{\circ}C$. For the IZO film treated at $500^{\circ}C$ of RTA, the resistivity, carrier concentration, hall mobility, and transmittance were approximately $10^2{\Omega}cm$, $10^{15}cm^{-3}$, $10cm^2/V{\cdot}s$, and 85%, respectively, which would be suitable for its application to the channel layer in transparent thin film transistors.

• Journal of the Korean Applied Science and Technology
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• v.26 no.4
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• pp.400-406
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• 2009

We investigated the electrochemical properties for Langmuir-Blodgett (LB) films of functionalized polyimide. LB films of polyimide monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with a three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) at various concentrations(0.5, 1.0, and 1.5 N) of $NaClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100 and 150 mV/s, respectively. As a result, monolayer and multilayer LB films of polyimide are appeared on irreversible process caused by the oxidation current from the cyclic voltammogram.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1425-1428
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• 2007

The amorphous IZO on flexible substrate (PC) shows similar electrical conductivity and optical transmittance with commercial ITO glass even though it was prepared at $<50\;^{\circ}C$. Moreover, it exhibits little resistance change during 5000 bending cycles, demonstrating good mechanical robustness. A green phosphorescent OLED fabricated on amorphous IZO on flexible PC shows maximum external quantum efficiency of ${\eta}_{ext}=13.7\;%$ and power efficiency of ${\eta}_p=32.7\;lm/W$, which are higher than a device fabricated on a commercial ITO on glass (${\eta}_{ext}=12.4%$ and ${\eta}_p=30.1\;lm/W$) and ITO on flexible PC (${\eta}_{ext}=8.5%$ and ${\eta}_p=14.1\;lm/W$).