• 제목/요약/키워드: Indium Tin Oxide

검색결과 974건 처리시간 0.031초

고효율의 용액공정용 유기 발광 다이오드 제작을 위한 ITO 전처리 연구 (Study on the ITO Pre-treatment for the Highly Efficient Solution Processed Organic Light-emitting Diodes)

  • 최은영;서지현;최학범;제종태;김영관
    • 한국전기전자재료학회논문지
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    • 제23권1호
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    • pp.18-23
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    • 2010
  • We demonstrated that the solution processed organic light-emitting diodes (OLEDs) have the high efficiency with pre-treated indium-tin-oxide (ITO). ITO surface was pre-treated with four methods and compared each other. The pre-treatment of ITO surface improves the chemical and physical characteristics of ITO such as the surface roughness, adhesion property, and the hole injection ability. These properties were analyzed by the contact angle, atomic force microscope (AFM) image, and the current flow character in device. As a results, the device with ITO pre-treated by $O_2$ plasma shows the current efficiency of 5.93 cd/A, which is 1.5 times the device without pre-treatment.

Effect of Silver Nanoparticles with Indium Tin Oxide Thin Layers on Silicon Solar Cells

  • Oh, Gyujin;Kim, Eun Kyu
    • Applied Science and Convergence Technology
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    • 제26권4호
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    • pp.91-94
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    • 2017
  • AThe effect of localized surface plasmon on silicon substrates was studied using silver nanoparticles. The nanoparticles were formed by self-arrangement through the surface energy using rapid thermal annealing (RTA) technique after the thin nanolayer of silver was deposited by thermal evaporation. By the theoretical calculation based on Mie scattering and dielectric function of air, indium tin oxide (ITO), and silver, the strong peak of scattering cross section of silver nanoparticles was found at 358 nm for air, and 460 nm for ITO, respectively. Accordingly, the strong suppression of reflectance under the condition of induced light of $30^{\circ}$ occurred at the specific wavelength which is almost in accordance with peak of scattering cross section. When the external quantum efficiency was measured using silicon solar cells with silver nanoparticles, there was small enhancement peak near the 460 nm wavelength in which the light was resonated between silver nanoparticles and ITO.

근접장 마이크로파 현미경을 이용한 ITO 박막 면저항의 비파괴 관측 특성 연구 (Nondestructive measurement of sheet resistance of indium tin oxide(ITO) thin films by using a near-field scanning microwave microscope)

  • 윤순일;나승욱;유현준;이영주;김현정;이기진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.1042-1045
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    • 2004
  • ITO thin films ($\sim150nm$) are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AEM). The sheet resistance of ITO thin films compared $s_11$ values by using a near field scanning microwave microscope.

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Synthesis and Dispersion Stabilization of Indium Tin Oxide Nanopowders by Coprecipitation and Sol-Gel Method for Transparent and Conductive Films

  • Cho, Young-Sang;Hong, Jeong-Jin;Kim, Young Kuk;Chung, Kook Chae;Choi, Chul Jin
    • 대한금속재료학회지
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    • 제48권9호
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    • pp.831-841
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    • 2010
  • Indium tin oxide (ITO) nanopowders were synthesized by coprecipitation and the sol-gel method to prepare a stable dispersion of ITO nano-colloid for antistatic coating of a display panel. The colloidal dispersions were prepared by attrition process with a vibratory milling apparatus using a suitable dispersant in organic solvent. The ITO coating solution was spin-coated on a glass panel followed by the deposition of partially hydrolyzed alkyl silicate as an over-coat layer. The double-layered coating films were characterized by measuring the sheet resistance and reflectance spectrum for antistatic and antireflective properties.

RF 마그네트론 스퍼터를 사용하여 증착한 IZTO 박막의 Zn/Sn 비율에 따른 효과 (The Effect of Zn/Sn Different Raito of InZnSnO Thin Films Prepared by RF Magnetron Sputtering)

  • 김기환;마리야느 푸트리;구창영;이정아;김정주;이희영
    • 한국전기전자재료학회논문지
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    • 제26권8호
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    • pp.591-596
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    • 2013
  • Indium Zinc Tin Oxide (IZTO) thin films were developed as an alternative to Indium Tin Oxide (ITO) thin films. ITO material which has been acknowledged with its low resistivity and optical transparency of 85-90% has been used as major transparent conducting oxide (TCO) materials. However, due to the limited source, high price, and instability problems at high temperature of indium, many researches has been focused on indium-saving TCO materials. Mason Group of Northwestern University was reported to expand the solubility limit up to 40% by co-doping with 1:1 ratio of $Zn^{+2}$ and $Sn^{+4}$ ions. In this study, the properties of IZTO thin films corresponding to Zn/Sn different ratio were investigated. In addition, the effect of substrate temperature variable to the structural, optical and electrical properties of IZTO thin films was investigated.