• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.23 no.3
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• pp.299-306
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• 2013

Objectives: The purpose of this study is to provide current the recent information on indium-related adverse health effects and the Korean indium-related industries. Methods: Peer review papers were searched in environmental, occupational and medical journals with the keyword of 'Indium' and 'ITO' and reviewed. To determine the indium related industries and indium consumption amounts, references and database were investigated and analyzed. In addition, field walk-through surveys and interviews were conducted in order to collect field data and to ascertain the field situation for the processes and industries. Results: A total of 10 cases of indium lung diseases have been reported in series since the first case reported in 2001. Seven cases were found in Japan, two cases in the United States, and one in China. No indium lung case has been reported yet in Korea, but it is believed that there are high potential risks among workers in indium-related industries. There are four categories in indiumrelated- industry; indium production and smelting, manufacturing of indium products such as ITO target, the production of thin films of flat panel display, and indium recovery industry. We found that all these types of industries are operating in Korea. Therefore, it is necessary for industrial hygienists to understand the processes and industries related to indium as well as the adverse health effects of indium. Conclusions: It was found that all four categories of indium-related industry from the indium production to recovery industry are active in Korea. However, the adverse health effects of indium are not well recognized. Therefore, it is believed that there is a high risks in indium-related industry, and it is necessary to make emergency interventions.

• Current Photovoltaic Research
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• v.5 no.4
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• pp.109-112
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• 2017

Various wt. ratios of indium were doped to the poly(3,4-ethylenedioxythiophene)-poly(styreneswulfonate) (PEDOT:PSS) to enhance the conductivity and transmittance. The transmittance of the films increased with increasing the amount of indium. The field emission scanning electron microscope (FESEM) image of 2.54 wt. % of indium doped PEDOT:PSS film shows large number of aggregated indium particles. However, more than 2.54 wt. % of indium doped PEDOT:PSS films showed reduced aggregated indium particles. Moreover, 4.47 wt. % of indium doped PEDOT:PSS film showed no aggregated particles. The resistivity of pure PEDOT:PSS film showed $880k{\Omega}{\cdot}cm$. The resistivity of 1.03 wt. % indium doped film reduced approximately 26 times compared with pure PEDOT:PSS film. The resistivity of indium doped film further reduced with increasing the amount of indium, which showed approximately $0.55k{\Omega}{\cdot}cm$ for the PEDOT:PSS film doped 4.47 wt. % of indium.

• Journal of Electrochemical Science and Technology
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• v.3 no.1
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• pp.1-13
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• 2012

Many researchers focus on indium contained semiconductors and alloy compounds for their various applications. Electrochemists want to obtain indium contained compounds simply via one-step electrodeposition. First of all, electrochemistry of constituent elements must be understood in order to develop the best condition for the electrodeposition of indium contained compounds. We will review the electrochemistry of indium. Equilibria between indium metal and indium ions and the standard electrode potentials of the equilibria will be reviewed. The electrochemical reactions of indium species are affected by surrounding conditions. Thus dependences of electrochemical behaviors of indium metal and indium ions on various parameters will be reviewed.

• Bulletin of the Korean Chemical Society
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• v.28 no.1
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• pp.17-28
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• 2007

Indium and gallium have emerged as useful metals in organic synthesis as a result of its intriguing chemical properties of reactivity, selectivity, and low toxicity. Although indium belongs to a main metal in group 13, its first ionization potential energy is very low and stable in H2O and O2. Therefore, indium-mediated organic reactions are of our current interest. On the basis of these properties of indium, many efficient indium-mediated organic reactions have been recently developed, such as the addition reactions of allylindium to carbonyl and iminium groups, the indium-mediated synthesis of 2-(2-hydroxyethyl)homoallenylsilanes, the indiummediated allylation of keto esters with allyl halides, sonochemical Reformatsky reaction using indium, the indium-mediated selective introduction of allenyl and propargyl groups at C-4 position of 2-azetidinones, the indium-mediated Michael addition and Hosomi-Sakurai reactions, the indium-mediated β-allylation, β- propargylation and β-allenylation onto α,β-unsaturated ketones, the highly efficient 1,4-addition of 1,3-diesters to conjugated enones by indium and TMSCl, and the intramolecular carboindation reactions. Also, we found gallium-mediated organic reactions such as addition reactions of propargylgallium to carbonyl group and regioselective allylgallation of terminal alkynes.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.24 no.3
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• pp.263-271
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• 2014

Objectives: Along with the several cases of pulmonary disorders caused by exposure to indium that have been reported in Japan, China, and the United States, cases of Korean workers involved in processes that require handling of indium compounds with potential risk of exposure to indium compounds have also been reported. We performed biological monitoring for workers in various target manufacturing processes of indium, indium oxide, and indium tin oxide(ITO)/indium zinc oxide(IZO) in domestic factories. Materials: As biological exposure indices, we measured serum concentrations of indium using inductively coupled plasma mass spectrometry, and Krebs von den Lungen 6(KL-6) and surfactant protein D(SP-D) using enzyme-linked immunosorbent assays. We classified the ITO/IZO target manufacturing process into powdering, mixing, molding, sintering, polishing, bonding, and finishing. Results: The powdering process workers showed the highest serum indium level. The mixing and polishing process workers also showed high serum indium levels. In the powdering process, the mean indium serum concentration in the workers exceeded $3{\mu}g/L$, the reference value in Japan. Of the powdering, mixing, and polishing process workers, 83.3%, 50.0%, and 24.5%, respectively, had values exceeding the reference value in Japan. We suppose that the reason of the higher prevalence of high indium concentrations in powder processing workers was that most of the particles in the powdering process were respirable dust smaller than $10{\mu}m$. The mean KL-6 and SP-D concentrations were high in the powdering, mixing, and polishing process workers. Therefore, the workers in these processes who were at greater risk of exposure to indium powder were those who had higher serum levels of indium, as well as KL-6 and SP-D. We observed significant differences in serum indium, KL-6, and SP-D levels between the process groups. Conclusions: Five among the seven reported cases of "indium lung" in Japan involved polishing process workers. Polishing process workers in Korea also had high serum levels of indium, KL-6, and SP-D. The outcomes of this study can be used as essential bases for establishing biological monitoring measures for workers handling indium compounds, and for developing health-care guidelines and special medical surveillance in Korea.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.174-179
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• 2012

In this study, we demonstrated a simple and eco-friendly method, including mechanical polishing and attrition milling processes, to recycle sputtered indium tin oxide targets to indium tin oxide nanopowders and targets for sputtered transparent conductive films. The utilized indium tin oxide target was first pulverized to a powder of sub- to a few- micrometer size by polishing using a diamond particle coated polishing wheel. The calcination of the crushed indium tin oxide powder was carried out at $1000^{\circ}C$ for 1 h, based on the thermal behavior of the indium tin oxide powder; then, the powders were downsized to nanometer size by attrition milling. The average particle size of the indium tin oxide nanopowder was decreased by increasing attrition milling time and was approximately 30 nm after attrition milling for 15 h. The morphology, chemical composition, and microstructure of the recycled indium tin oxide nanopowder were investigated by FE-SEM, EDX, and TEM. A fully dense indium tin oxide sintered specimen with 97.4% of relative density was fabricated using the recycled indium tin oxide nanopowders under atmospheric pressure at $1500^{\circ}C$ for 4 h. The microstructure, phase, and purity of the indium tin oxide target were examined by FE-SEM, XRD, and ICP-MS.

• Safety and Health at Work
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• v.12 no.2
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• pp.238-243
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• 2021

Objectives: The aim of this study was to provide baseline data for the assessment of exposure to indium and to prevent adverse health effects among workers engaged in the electronics and related industries in Republic of Korea. Methods: Total (n = 369) and respirable (n = 384) indium concentrations were monitored using personal air sampling in workers at the following 19 workplaces: six sputtering target manufacturing companies, four manufacturing companies of panel displays, two companies engaged in cleaning of sputtering components, two companies dedicated to the cleaning of sputtering target, and five indium recycling companies. Results: The level of exposure to total indium ranged from 0.9 to 609.3 ㎍/m³ for the sputtering target companies; from 0.2 to 2,782.0 ㎍/m³ for the panel display companies and from 0.5 to 2,089.9 ㎍/m³ for the indium recycling companies. The level of exposure to respirable indium was in the range of 0.02 to 448.6 ㎍/m³ for the sputtering target companies; 0.01 to 419.5 ㎍/m³ for the panel display companies; and 0.5 to 436.3 ㎍/m³ for the indium recycling companies. The indium recycling companies had the most samples exceeding the exposure standard for indium, followed by sputtering target companies and panel display companies. Conclusions: The main finding from this exposure assessment is that many workers who handle indium compounds in the electronics industry are exposed to indium levels that exceed the exposure standards for indium. Hence, it is necessary to continuously monitor the indium exposure of this workforce and take measures to reduce its exposure levels.

• Journal of Electrochemical Science and Technology
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• v.4 no.3
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• pp.93-101
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• 2013

The electrodeposition of indium onto a copper electrode from an aqueous sulfate solution containing $In^{3+}$ was studied by means of cyclic voltammetry and chronoamperometry. Reduction and oxidation of indium on copper were investigated by using cyclic voltammograms at different negative limiting potentials and at different scan rates in cumulative cycles. Cyclic voltammograms indicated that reduction and oxidation processes of indium could involve various reactions. Chronoamperometry was carried out to analyze the nucleation mechanism of indium in the early stage of indium electrodeposition. The non-dimensional plot of the current transients at different potentials showed that the shape of the plot depended on the applied potential. The nucleation of indium at potential step of -0.6~-0.8 V was close to progressive nucleation limited by diffusion. However the non-dimensional plot of current transients for the indium nucleation showed different behaviors from theoretical curves at the potential step lower than -0.8 V.

• Journal of the Korean Ceramic Society
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• v.35 no.6
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• pp.529-534
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• 1998

Agglomeration-free indium oxide particles were produced by ultrasonic pyrolysis of indium nitrate(3 hy-drate) solution. Th mean size of particles was increased from 3 $\mu\textrm{m}$ to 11$\mu\textrm{m}$ with increasing intial con-centrations of indium nitrate from 0.05mol% to 4.83 mol% When the input rate of indium nitrate solution was increased from 0.1 cm3/min to 0.8cm3/min the size of particles remained same and only the pro-duction rate of particles was increased. At 300$^{\circ}C$ the particles were white color with low crystallinity. But the color turned into yellow with increasing reaction temperature. The change of particle size was not ob-served with increasing temperatuer up to 700$^{\circ}C$ IR spectrum and TGA analysis confirmed that the purity of indium oxide was increased with temperature of reaction.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.104-104
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• 1999

Cerium dioxide 박막의 포토루미네슨에 관해서는 Cerium 4f band에서 oxygen 2p band로의 transition에 의한 발광(400nm) 현상이 보고되었다. 또한 Indium Oxide 박막의 발광(637nm0 현상이 보고되었다. 본 연구에서는 3족인 Indium을 Si/In/CeO2/Si 구조와 CeO2/Si 구조에 도핑하여 포토루미네슨스 현상을 관찰하였다. E-beam evaporator를 사용하여 Silicon(111) 기판에 Cerium dioxcide 박막을 성장시킨 경우의 두가지 시료를 분석하였다. 포토루미네슨스 관찰을 위해서 Ge-Cd laser (325nm)가 사용되었으며 Indium의 도핑양과 분포 상태를 알기 위해 SIMS와 ADP를 이용하여 분석하였다. Indium양에 대한 포토루미네슨스 변화와 열처리 후의 indium의 분포의 변화에 의한 포토루미네슨스 변화를 관찰하였다. 상온에서 In/CeO2/Si 시료와 Si/In/CeO2/Si 시료에 대한 포토루미네슨스 현상을 관찰한 결과 Si/In/CeO2/Si 시료에서만 500nm(2.5eV)에서 발광 현상이 관찰되었다. 도핑된 indium은 ADP에서는 검출되지 않고 SIMS에서만 검출되어 ADP의 detection range(1-0.1%) 이하의 양이 도핑된 것으로 추측된다. 도핑된 Indium의 양이 증가할수록 포토루미네슨스의 Intensity가 증가하였다. 또한 열처리(110$0^{\circ}C$, 1min) 후 포토루미네슨스의 peak위치가 390nm(3.18eV)로 변화하였다. Si/In/CeO2/Si에서 포토루미네슨스 현상이 관측되고 Intensity가 indium의 양에 의존하므로 완전하지 못한 Cerium dioxide의 CeOx 구조와 indium과의 결합이 포토루미네슨스의 원인으로 추측된다. 열처리 후 SIMS의 분석결과 indium의 분포가 변화하였으며 이는 포토루미네슨스의 변화의 원인으로 판단된다.