• 제목/요약/키워드: Incubation Temperature

검색결과 838건 처리시간 0.025초

기존의 핵산증폭기를 사용한 유리슬라이드상에서의 원위치 중합효소 연쇄반응 (In Situ PCR on the Glass Slide Using the Conventional DNA Thermal Cycler)

  • 오정균;장진수;이재영
    • 미생물학회지
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    • 제39권3호
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    • pp.197-200
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    • 2003
  • 기존의 핵산증폭기를 사용하여 유리 슬라이드상에서의 효과적인 원위치 중합효소 연쇄반응(in situ PCR)을 수행하기 위해서는 여러 가지 조건들을 고려해야 하는데, 이러한 조건에는 PCR 용액의 세포속으로의 침투, 증폭된 PCR산물의 세포외 유출의 방지, PCR용 액 성분의 유리슬라이드로의 비특이적 부착으로 인한 손실, 열에 의한 시약의 증발, heat block으로부터 슬라이드로의 열전도성 둥이 있다. 특히 PCR용액 성분의 세포내로의 침투를 보장하기 위해서는 다소 높은 농도의 PCR 용액성분(특히 4.5 mM $MgCl_{2}$ 농도)이 필요하였고, Taq 효소는 PCR전 처리(pre-PCR incubation)를 수행하는 경우,50 ${\mu}l$ 반응당 5~10 units이면 충분하였다. 또한 PCR의 전형적인 온도-시간 양상(temperature-time profile)을 만족시키기 위해서는 먼저 샘플의 건조화를 방지해야 하는데, 이를 위해서 heat block속의 빈 공간에 적당량의 물을 첨가했고, 설정온도와 실제온도를 측정해본 결과 약3~$4^{\circ}C$의 차이가 있었다.

미국삼(Panan quinquefolium)에서 분리한 뿌리썩음병균 Cylindrocarpon destructans의 후막포자 생성 및 분리 (Production and Isolation of Chlamydospores in Cylindrocaupon destructans Causing Root Rot of Panax quinquefolium)

  • 조대휘;유연현
    • Journal of Ginseng Research
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    • 제22권4호
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    • pp.304-309
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    • 1998
  • Incubation condition affecting the chlamydospore formation and isolation from mycelia and conidia of Cylindrocarpon destructanse (isolate ACY-9701), isolated from the root rot lesion of the American ginseng (Panax quinquefolium) was investigated. Chlamydospores were formed from mycilia but not from conidia on the Czapek-Dox agar without carbon or nitrogen source after 20 days incubation at 2$0^{\circ}C$. In the medium added with nitrogen and carbon sources, immatured chlamy-dospore-like cells were formed from microconidia and mycelia as well. Immatured chlamydospore-like cells were formed from mycelia as well as microconidia In corn, kidney bean, and pea root extracts after 20 days incubation at 20"C, while typical chlamydospores were formed from both of them in the root extract of Panax quinquefolium. The 3.6 log chlamydospore/mm" was converted from microconidia in the medium, which was equal to 2.5% conidia formed. Under the light condition (251.1 pmol/m" sec, 12 hrs dark and light cycle), 4.2 log/mm" of chlamydospores were converted from interracially or terminal cells of macroconidia, which was 4.0% of macroconidia produced on Potato dextrose agar (PDA). When mycelia and microconidia were stored at -7$0^{\circ}C$ for 32 days and incubated on PDA after thawing at room temperature to isolate chlamydospores from them, microconidia and mycelia were still alive. Meanwhile, microconidial lysis was found after heating them at 32$^{\circ}C$ for 7 days, but the chlamydospores converted from macroconidia were not lysed up to 13 days at 32"C. to 13 days at 32"C.ot;C.

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Embryonic and Morphological Development of Larvae and Juvenile of the Buenos Aires Tetra, Hyphessobrycon anisitsi (Pisces Characidae) Characidae Fishes

  • Park, Jae-Min;Han, Kyeong-Ho;Han, Ran
    • 한국발생생물학회지:발생과생식
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    • 제19권1호
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    • pp.25-31
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    • 2015
  • We have launched an investigation for Embryonic Development, Larvae and Juvenile Morphology, of Buenos aires tetra in order to build basic data of Characidae and fish seeding production. We brought 50 couples of Characidae from Bizidduck aquarium in Yeosu-si, Jeollanamdo, from Korea on March of 2015. We put them in the tetragonal glass aquarium ($50{\times}50{\times}30cm$). Breeding water temperature was $27.5{\sim}28.5^{\circ}C$ (mean $28.0{\pm}0.05^{\circ}C$) and being maintained. The shape of fertilized egg was round shape, and it was adhesive demersal egg. The egg size was 0.63~0.91 mm (mean $0.74{\pm}0.07mm$, n=20). After getting fertilized egg, the developmental stage was gastrula stage, and embryo covered almost two-thirds of Yolk. Incubation was happened after 16 hours 13 minutes from gastrula stage, and the tail of juvenile came out first with tearing egg capsule. Immediately after the incubation, prelarvae had 3.78~3.88 mm length (mean $3.84{\pm}0.04mm$, n=5), and it had no mouth and anus yet. 34 days after hatching from the incubation, juvenile had 8.63~13.1 mm (mean $10.9{\pm}1.66mm$), and it had similar silver-colored body shape with its mother.

MILC 성장 속도에 비정질 실리콘의 기하학적 형상이 미치는 영향 (The Effect of Geometric Shape of Amorphous Silicon on the MILC Growth Rate)

  • 김영수;김민선;주승기
    • 한국재료학회지
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    • 제14권7호
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    • pp.477-481
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    • 2004
  • High quality polycrystalline silicon is very critical part of the high quality thin film transistor(TFT) for display devices. Metal induced lateral crystallization(MILC) is one of the most successful technologies to crystallize the amorphous silicon at low temperature(below $550^{\circ}C$) and uses conventional and large glass substrate. In this study, we observed that the MILC behavior changed with abrupt variation of the amorphous silicon active pattern width. We explained these phenomena with the novel MILC mechanism model. The 10 nm thick Ni layers were deposited on the glass substrate having various amorphous silicon patterns. Then, we annealed the sample at $550^{\circ}C$ with rapid thermal annealing(RTA) apparatus and measured the crystallized length by optical microscope. When MILC progress from narrow-width-area(the width was $w_2$) to wide-width-area(the width was $w_1$), the MILC rate decreased dramatically and was not changed for several hours(incubation time). Also the incubation time increased as the ratio, $w_1/w_2$, get larger. We can explain these phenomena with the tensile stress that was caused by volume shrinkage due to the phase transformation from amorphous silicon to crystalline silicon.

Lactobacillus bulgaricus와 Streptococcus lactis 발효탈지유에서의 Listeria monocytogenes의 생존추이 (Behavior of Listeria monocytogenes in skin milk during fermentation by Lactobacillus bulgaricus and Streptococcus lactis)

  • 박경식
    • 환경위생공학
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    • 제12권1호
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    • pp.85-95
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    • 1997
  • Behavior of Listeria monocytogenes in Skim milk during fermentation by Lactobacillus bulgaricus YI-2 and Streptococcus lactis FYI-1 were determined. Autoclaved skim milk was inoculated with ca. 10$^{3}$ L. monocytogenes (Strain LM91-1 or LM 96-2) cells/ml, and with 5.0, 1.0, 0.5 or 0.1% of a milk culture of either L. bulgaricus TI-2 or S. lactis FYI-1. Skim milk containing ca. 10$^{3}$ L. monocytogenes was incubated at 37 or 42$\circ $C for 15 h with L. bulgaricus YI-2, and at 21 or 30$\circ $C for 15 h with S. lactis FYI-1. Cultured skim milks were stored at 4$\circ $C in the refrigerater. Samples were plated on Oxford Agar with oxford antimicrobic supplement to enumerate L. monocytogenes and on either modified MRS agar to enumerate lactic acid bacteria. L. monocytogenes survived the 15-h fermentation with S. lactis FYI-1 in all combinations of level of inoculum and temperature of incubation, but inhibition of growth ranged from 94 to 100%. When incubated with over the 1.0% of L. bulgaricus, L. monocytogenes inhibited or disappeared in fermented skim milk from 9 h after incubation. Especially, incubation at 42$\circ $C with 5.0% L. bulgaricus YI-2 as inoculum appeared to be the most effective inhibitory combination for strain LM 91-1, causing 100% inhibition in growth based on maximum papulation attained. In most instances of incubated with L. bulgaricus YI-2, growth of the pathogene appeared to be completely inhibited when the pH dropped below 4.38.

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증착과 식각의 연속 공정을 이용한 저온 선택적 실리콘-게르마늄 에피 성장 (Low-Temperature Selective Epitaxial Growth of SiGe using a Cyclic Process of Deposition-and-Etching)

  • 김상훈;이승윤;박찬우;심규환;강진영
    • 한국전기전자재료학회논문지
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    • 제16권8호
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    • pp.657-662
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    • 2003
  • This paper presents a new fabrication method of selective SiGe epitaxial growth at 650 $^{\circ}C$ on (100) silicon wafer with oxide patterns by reduced pressure chemical vapor deposition. The new method is characterized by a cyclic process, which is composed of two parts: initially, selective SiGe epitaxy layer is grown on exposed bare silicon during a short incubation time by SiH$_4$/GeH$_4$/HCl/H$_2$system and followed etching step is achieved to remove the SiGe nuclei on oxide by HCl/H$_2$system without source gas flow. As a result, we noted that the addition of HCl serves not only to reduce the growth rate on bare Si, but also to suppress the nucleation on SiO$_2$. In addition, we confirmed that the incubation period is regenerated after etching step, so it is possible to grow thick SiGe epitaxial layer sustaining the selectivity. The effect of the addition of HCl and dopants incorporation was investigated.

Improved Fluorescent Determination Method of Cellular Sphingoid Bases in High-performance Liquid Chromatography

  • Yoon, Hong-Tak;Yoo, Hwan-Soo;Shin, Bum-Kyu;Lee, Woo-Jin;Kim, Hwan-Mook;Hong, Seon-Pyo;Moon, Dong-Cheul;Lee, Yong-Moon
    • Archives of Pharmacal Research
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    • 제22권3호
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    • pp.294-299
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    • 1999
  • Precolumn orthophthaldehyde (OPA) labeling method of sphingoid bases, sphingosine and sphinganine, was investigated to obtain high fluorescent detectability. In order to improve the fluorescent yield, we investigated the optimal solubility of sphingoid bases for five pre-incubation solvents by incorporating the heating procedure before OPA derivatization. The pre-incubation in ethanol prominently increased the fluorescent peak height of OPA derivative for each sphingoid bases in high performance liquid chromatography. About tenfold increase of detectability was archived by pre-incubating lipid extracts pellets in ethanol at $60^{\circ}C$ for 30 min. Optimal derivatization was performed in 30 min at ambient temperature and the fluorescent intensity of OPA derivative was stable for two weeks at $4^{\circ}C$. The detection limit of sphingosine was 0.1 pmol as injected amount. This method was applied to the determination of cellular sphingosine and sphinganine in various human lung cancer cells. This OPA procedure was prospective to be useful for quantitating the amount of sphingoid bases in other cancer cells.

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사파이어($\alpha$-Al$_2$O$_3$) 단결정에 있어 basal slip (0001)1/3<1120>전위 Part I : 재결합거동 (Basal slip (0001)1/3<1120> dislocation in sapphire ($\alpha$-Al$_2$O$_3$) single crystals Part I : recombination motion)

  • Yoon, Seog-Young
    • 한국재료학회지
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    • 제11권4호
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    • pp.278-282
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    • 2001
  • 사파이어($\alpha$-$Al_2$$O_3$) 단결정에 있어 basal slip (0001)1/3<1120>의 부분전위의 재결합거동을 알아보기 위해 prism plane (1120)의 사파이어 재료를 사용하여 4점 곡강도 시험을 행하였다. 이 굽힘시험은 온도 $1200^{\circ}C$~$1400^{\circ}C$에서 그리고 응력은 90MPa, 120MPa, 150MPa에서 행하여졌다 굽힘시험 동안 basal전위가 이동하기 위해 잠복기가 필요하였다. 실험온도 범위내에서 잠복기의 활성화에너지는 5.6-6.0eV이었으며, 이 잠복기는 자체-상승운동으로 분해된 부분전위들이 재결합하는데 필요한 시간인 것으로 추정되었다. 한편, 이 활성화에너지는 $Al_2$$O_3$에 있어 산소의 자체 확산을 위한 에너지 (대fir 6.3eV)와 거의 일치하였다. 이 결과를 통하여, 두 부분전위들의 재결합은 부분전위사이 적층결함으로 산소 자체확산에 의해 제어되는 것으로 여겨진다.

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Nocardia brasiliensis의 분리(分離) 및 생물학적(生物學的) 성상(性狀)에 관(關)하여 (Studies on the Biological Properties of Nocardia Brasiliensis Isolated from Pus)

  • 석종성;이재철;이승훈
    • 대한미생물학회지
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    • 제10권1호
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    • pp.25-32
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    • 1975
  • The majority of Nocardial infections reported in North America areIN. ;asteroides while those in Latin America are N. brasiliensis species. Infection with N. brasiliensis, to our knowledge, has not previously been reported in Korea. The auther isolated one strain of Nocardia brasiliensis from the abscess of right bottock of 23 month old female leukemic patient who was treated with methotrixate for five months at the Seoul National University Hospital. The morphological characteristics and biological properties were similar with the R.E. Gordon's description. The results are summarized as follow: 1. After 5 days incubation on Sabouroud's glucose agar, the acid fast character appeared partially. 2. Tyrosine, casein and urea were decomposed by 7 days incubation both at room temperature and at $37^{\circ}C$. 3. Sod, citrate and sod. acetate were utilized at $22^{\circ}C\;and\;37^{\circ}C$ after 28 days incubation while the sod. benzoate utilization was negative. 4. The survival range of temperature was from $10^{\circ}C\;to\;40^{\circ}C$. 5. Dulcitol, galactose, glycerol, lactose, maltose, mannitol, raffinose, rhamnose, sorbitol, trehalose and xylose fermentations were not observed up to 28 days, while the fermentation of glucose and inositol were positive.

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Si-Ge-H-Cl 계를 이용한 자기정렬 HBT용 Si 및 SiGe의 선택적 에피성장 (Selective Epitaxial Growth of Si and SiGe using Si-Ge-H-Cl System for Self-Aligned HBT Applications)

  • 김상훈;박찬우;이승윤;심규환;강진영
    • 한국전기전자재료학회논문지
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    • 제16권7호
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    • pp.573-578
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    • 2003
  • Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.