• Bulletin of the Korean Chemical Society
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• v.21 no.12
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• pp.1217-1221
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• 2000

L-alanine dehydrogenase from Bacillus subtilis exhibits allosteric kinetic properties in the presence of $ZN^{2+}$. $ZN^{2+}$ induces the binding of substrate (L-alanine) to be cooperative at pH 8.0. The effect of pH variation between pH 7.0 and pH 10.0 on the inhibition by $ZN^{2+}$ correlates with the pH effect on the $K_m$ values for L-alanine within these pH range indicating that $ZN^{2+}$ and substrate compete for the same site. No such cooperativity is induced by $ZN^{2+}$ when the reaction is carried out at pH 10. At this higher pH, $ZN^{2+}$ binds with the enzyme with lower affinity and noncompetitive with respect to L-alanine. Inhibition of L-alanine dehydrogenase by $ZN^{2+}$ depends on the ionic strength. Increase in KCI concentration reduced the inhibition, but allosteric property in $ZN^{2+}$ binding is conserved. A model for the regulatory mechanism of L-alanine dehydrogenase as a noncooperative substrate-cooperative cofactor allosteric enzyme, which is compatible in both concerted and the sequential allosteric mechanism, is proposed.

• Journal of the Korean Ceramic Society
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• v.28 no.9
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• pp.683-688
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• 1991

ZnO-P2O5 system glass containing 45 to 60 mol% ZnO has been melted at 120$0^{\circ}C$ and crystallized through heat treatment. Each condition of crystallization was determined by measurement of dilatometric softening point and DTA. The principal crystalline phase was identified as zinc metaphosphate [Zn(PO3)2] in the glasses containing 45~55 mol% ZnO and zinc pyrophosphate (Zn2P2O7) in the sample of 60 mol% ZnO with X-ray diffraction patterns. The crystalline mechanism was investigated by XRD and SEM. As the results, the specimens containing 50~60% ZnO showed the existence of oriented structure due to one-dimensional crystal growth.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.531-531
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• 2012

So many groups have been researching the green quantum dots such as InP, InP/ZnS for overcoming the semiconductor nanoparticles composed with heavy metals like as Cd and Pb so on. In spite of much effort to keep up CdSe quantum dots, it does not reach the good properties compared with CdSe/ZnS quantum dots. This quantum dot has improved its properties through the generation of core/shell CdSe/ZnS structure or core/multi-shell structures like as CdSe/CdS/ZnS and CdSe/CdS/ CdZnS/ZnS. In this research, we try to synthesize the InP multi-shell structure by the successiveion layer absorption reaction (SILAR) in the one pot. The synthesized multi-shell structure has improved quantum yield and photo-stability. To generate white light, highly luminescent InP multi-shell quantum dots were mixed with yellow phosphor and integrated on the blue LED chip. This InP multi-shell improved red region of the LEDs and generated high CRI.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.611-617
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• 2006

We report the preparation of N doped, p-type ZnO films by post-annealing in $NH_3$ ambient. The properties were examined by XRD, Hall-effect measurement, PL, and SIMS. ZnO films showed better crystallinity and electron concentration of $10^{15}-10^{17}/cm^3$ with post-annealing in $NH_3$ ambient. These films were converted to p-type ZnO by activation thermal annealing process at $800^{\circ}C$ under $N_2$ ambient. The electrical properties of the p-type ZnO showed a hole concentration of $1.06\times10^{16}/cm^3$, a mobility of $15.8cm^2/V{\cdot}s$, and a resistivity of $40.18\Omega{\cdot}cm$. The N doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO:N. In the SIMS spectra, the incorporation of nitrogen was confirmed.

• Asian-Australasian Journal of Animal Sciences
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• v.31 no.8
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• pp.1267-1274
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• 2018

Objective: The objective of the study was to investigate the effects of zinc amino acid complex (ZnAA) on growth performance, hematological and biochemical parameters in weanling pigs. Methods: In Exp. 1, a total of 216 Duroc${\times}$Landrace${\times}$Large White weanling pigs were assigned randomly to 6 dietary treatments. Each treatment had 6 replicates (pens) with 6 pigs each. The diets were corn-soybean meal based with supplementation of 0, 20, 40, 80, 120 mg Zn/kg from ZnAA or 40 mg Zn/kg from feed-grade zinc sulfate. The experiment lasted 42 days. In Exp. 2, a total of 180 weanling pigs were assigned randomly to 3 dietary treatments supplemented with 0, 80, or 800 mg Zn/kg from ZnAA. Results: In Exp. 1, pigs fed 40 to 80 mg Zn/kg from ZnAA had higher (p<0.05) average daily gain (ADG) than the unsupplemented group during d 0 to 14. During d 0 to 42, the pigs fed 20 to 120 mg Zn/kg from ZnAA had increased (p<0.05) ADG. Pigs fed 20 to 120 mg/kg Zn from ZnAA had lower feed:gain (p<0.05), increased the activity of serum Cu-Zn superoxide dismutase on d 14, and increased serum Zn levels on d 42 (p<0.05). In Exp. 2, pigs fed diets with 800 mg Zn/kg had increased average daily feed intake during d 15 to 28 (p<0.05) compared to the unsupplemented group. During d 0 to 28, the pigs fed supplemental Zn had increased ADG (p<0.05). On d 14 and d 28, pigs fed supplemental Zn had higher the serum alkaline phosphatase activities (p<0.05). No significant differences were observed in the hematological parameters and organ indices. Conclusion: Supplementation with 20 to 80 mg/kg Zn from ZnAA improved the growth performance in weaned pigs. The piglets can tolerate up to 800 mg/kg Zn from ZnAA with limited potential health effects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.65-66
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• 2008

The realization and origin of p-type ZnO are main issue for photoelectronic devices based on ZnO material. N-doped and nominally undoped p-type ZnO films were achieved on silicon (100) and homo-buffer layers by RF magnetron sputtering and post in-situ annealing. The undoped film shows high hole mobility of 1201 $cm^2V^{-1}s^{-1}$ and low resistivity of $0.0454\Omega{\cdot}cm$ with hole concentration of $1.145\times10^{17}cm^{-3}$. The photoluminescence(PL) spectra show the emissions related to FE, DAP and defects of $V_{Zn}$, $V_O$, $Zn_O$, $O_i$ and $O_{Zn}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.141-142
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• 2005

To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $300^{\circ}C$ and 5.2 mTorr, and the purity of target is ZnO 5N. The thickness of ZnO thin films was about $1.9{\mu}m$ at SEM analysis after sputtering process. Phosphorus (P) and arsenic (As) were diffused into ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and $700^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is $700^{\circ}C$, 3hr. Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.151-155
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• 2014

We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

• Asian-Australasian Journal of Animal Sciences
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• v.23 no.7
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• pp.937-945
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• 2010

This study aimed to investigate the effects of dietary zinc (Zn), environmental temperatures and Zn${\times}$temperature interaction on growth, feathering score and mineral composition of broilers. A total of 256 d-old Avian male broiler chicks were randomly allocated to a $4{\times}2$ factorial arrangement with four corn-soybean meal basal diets (containing 44 mg Zn/kg) supplemented with 0, 40, 60 mg/kg Zn (Diets 1, 2 and 3, respectively; 0.8% Ca for these three diets) and non-Zn supplementation, 1.6% Ca (Diet 4) and two temperature conditions (low: 26, 24, $22^{\circ}C$ vs. high: 30, 28, $26^{\circ}C$). All birds were given feathering coverage scores for back, breast, wing, under-wing and tail. The wing and tail were further evaluated for the occurrence and severity of defect feathers. Feathers were then pooled for mineral composition analysis. The results showed that in high temperature conditions, broilers fed Zn-unsupplemented, 0.8% Ca ration (Diet 1) had significantly (p<0.05) lower ADFI and ADG (wk 1-6) than birds under low temperature conditions. However, when the birds were fed 40 and 60 mg/kg Zn supplementation (Diets 2 and 3), the ADFI and ADG in both temperature conditions were not significantly different. In low temperature conditions, the ADFI, ADG (p<0.05), all feather coverage (p<0.01) and tail defect scores (p<0.001) of birds fed Diet 4 (excess Ca) were significantly poorer than those fed Diet 1. More Ca (p<0.05) was retained in the feathers of broilers fed Diet 4 under high temperature conditions. Broilers fed the Zn-unsupplemented ration (Diet 1) had significantly higher feather phosphorus (p<0.01) and potassium (p<0.05) concentrations than those fed the 60 mg/kg Zn-supplemented ration (Diet 3). A reduction of feather phosphorus (p<0.01) and potassium (p<0.05) and higher manganese (p<0.05) concentrations were observed in Diet 4 broilers as compared to those fed Diet 1. Under high temperature conditions, broilers had lower iron (p<0.05) and higher manganese (p<0.05) concentrations in feathers. Broilers kept in high temperature conditions had a higher Zn requirement and 40 mg/kg Zn supplementation was sufficient for the birds to achieve optimum growth. Supplemental Zn ameliorated the adverse effect of high temperature on growth and occurrence of tail feather defects. Excess Ca disrupted Zn metabolism to exert a detrimental effect on growth performance and normal feathering and this was elucidated in the birds kept in low temperature conditions.