• Analytical Science and Technology
• /
• 제14권3호
• /
• pp.259-265
• /
• 2001

Photocatalytic degradation of Congo red was performed using various semiconductors as ZnO, CdS, rutile-$TiO_2$ or mixed rutile-$TiO_2$/ZnO. The change of degradation of the dye was investigated by UV-visible spectrophotometric method. The photocatalytic action of CdS was greater than ZnO and rutile-$TiO_2$ in account of low band gap energy of CdS. The rate of photocatalytic degradation reaction increased drastically in according to increasing ratio of ZnO on mixed rutile-$TiO_2$/ZnO. These photocatalytic effect of rutile-$TiO_2$ was suppressed by more stable rutile-$TiO_2$, doping the hydrolysis product with $Zn^{2+}$ prior to calcination onto the rutile-$TiO_2$ surface.

• Journal of the Korean Vacuum Society
• /
• 제18권5호
• /
• pp.384-389
• /
• 2009

ZnO, a wurtzite lattice structure, has attracted much attention as a promising material for light-emitting diodes (LEDs) due to highly efficient UV emission resulting from its large band gap of 3.37 eV, large exciton binding energy of 60 meV, and low power threshold for optical pumping at room temperature. For the realization of LEDs, both n-type ZnO and p-type ZnO are required. Now, n-type ZnO for practical applications is available; however, p-type ZnO still has many drawbacks. In this study, ZnO films were grown on glass substrates by using atomic layer deposition (ALD) and the ZnO films were irradiated by nitrogen ion beams (20 keV, $10^{13}{\sim}10^{15}ions/cm^2$). The effects of nitrogen-beam irradiation on the ZnO structure as well as the electrical property were investigated by using fieldemission scanning electron microscopy (FESEM) and Hall-effect measurement.

• Journal of the Korean Ceramic Society
• /
• 제28권4호
• /
• pp.305-314
• /
• 1991

This study was conducted to research the formation and the color development of NiO-ZnO-Fe2O3-TiO2-SnO2 system for the purpose of synthesizing the spinel pigments which are stable at high temperature. After preparing ZnO-Fe2O3 as a basic composition, {{{{ chi }}NiO.(l-{{{{ chi }})ZnO.Fe2O3 system, {{{{ chi }}NiO.(l-{{{{ chi }})ZnO.TiO2 system, and {{{{ chi }}NiO.(l-{{{{ chi }})ZnO.SnO2 system were prepared with {{{{ chi }}=0, 0.2, 0.5, 0.7, 1 mole ratio respectively. The manufacturing was carried out at 128$0^{\circ}C$ for 30 minutes. The reflectance measurement and the X-ray analysis of these specimens were carried out and the results were summarized as follows. 1. In the specimens which included NiO, it was difficult for the spinel structure to be formed. 2. As increasing the contents of NiO and Fe2O3, all the groups which were yellow or green colored changed to brown. 3. NiO-ZnO-Fe2O3 system and NiO-ZnO-TiO2 system formed the spinel structure and the illmenite structure appeared in NiO-TiO2 system.

• Applied Science and Convergence Technology
• /
• 제23권6호
• /
• pp.376-386
• /
• 2014

Zinc oxysulfide nanocrystals (ZnOS NCs) were synthesized by forming ZnS phase on a ZnO matrix. ZnO nanocrystals (NCs) with a diameter of 10 nm were synthesized by forced hydrolysis in an organic solvent. As-synthesized ZnO NCs aggregated with each other due to the high surface energy. As acetic acid (AA) was added into the milky suspension of the aggregated ZnO NCs, transparent solution of well dispersed ZnO NCs formed. Finally ZnOS NCs were formed by adding thioacetic acid (TAA) to the transparent solution. The effect of recrystallization on the structural, optical and electrical properties of the ZnOS NCs were studied. The results of UV-vis absorption confirmed the band gap tunability caused by increasing the curing temperature of ZnOS thin films. This may have originated from the larger effective size due to the recrystallization of zinc sulfide (ZnS). From XRD result we identified that ZnOS thin films have a zinc blende crystal structure of ZnS without wurtzite ZnO structure. This is probably due to the small amount of ZnO phases. These assertions were verified through EDS of FE-SEM, XPS and EDS mapping of HR-TEM results; we clearly proved that ZnOS were comprised of ZnS and ZnO phases.

• The Korean Journal of Ceramics
• /
• 제4권3호
• /
• pp.207-212
• /
• 1998

By comparison of the experimental results in two systems of ZnO varistors, it's appear that Sb2O3 is the indispensable element for twining in ZnO varistors and the Zn7Sb2O12 spinel acts as the nucleus to form twins. Al2O3 is not the origin of twining in ZnO varistor, but it was found that Al2O3 could strengthen the twining and form a deformation twining by ZnAl2O4 dragging and pinning effect. The inhibition ratios of grain and nonuniformity of two systems ZnO varistors increase with the increase of Al2O3 content. The twins affect the inhibition of grain growth, the mechanism could be explained follow as: twins increase the mobility viscosity of ZrO grain and grain boundary, and drag ZrO grain and liquid grain boundary during the sintering, then the grain growth is inhibited and the microstructure becomes more uniform.

• Journal of the Korean Vacuum Society
• /
• 제20권1호
• /
• pp.50-56
• /
• 2011

In this study, the effects of ZnO buffer layer thickness and annealing temperature on the heterojunction diode, ZnO/b-ZnO/p-Si(111), were reported. The effects of those on the structural and electrical properties of zinc oxide (ZnO) films on ZnO buffered p-Si (111) substrate were also studied. Structural properties of ZnO thin films were studied by X-ray diffraction and I-V characteristics were measured by a semiconductor parameter analyzer. ZnO thin films with 70 nm thick buffer layer and annealing temperature of $700^{\circ}C$ showed the best c-axis preferred orientation. The best electrical property was found at the condition of buffer layer annealing temperature of $700^{\circ}C$ and 50nm thick ZnO buffer layer (resistivity: $2.58{\times}10^{-4}[{\Omega}-cm]$, carrier concentration: $1.16{\times}1020[cm^{-3}]$). The I-V characteristics for ZnO/b-ZnO/p-Si(111) heterojunction diode were improved with increasing buffer layer thickness at buffer layer annealing temperature of $700^{\circ}C$.

• Current Photovoltaic Research
• /
• 제1권1호
• /
• pp.52-58
• /
• 2013

Two different window-structured $CuInGaSe_2$(CIGS) solar cells, i.e., CIGS/thin-CdS/ZnO:B(sample A) and CIGS/very thin-CdS/Zn(S/O)/ZnO:B(sample B), were prepared, and the diffusivity of Zn, Cd, S, and B atoms, respectively, in the CIGS, ZnO or Zn(S/O) layer was estimated by a theoretical fit to experimental secondary ion mass spectrometer data. Diffusivities of Zn, Cd, S, and B atoms in CIGS were $2.0{\times}10^{-13}(1.5{\times}10^{-13})$, $4.6{\times}10^{-13}(4.4{\times}10^{-13})$, $1.6{\times}10^{-13}(1.8{\times}10^{-13})$, and $1.2{\times}10^{-12}cm^2/s$ at 423K, respectively, where the values in parentheses were obtained from sample B and the others from sample A. The diffusivity of the B atom in a Zn(S/O) of sample B was $2.1{\times}10^{-14}cm^2/sec$. Moreover, the diffusivities of Cd and S atoms diffusing back into ZnO(sample A) or Zn(S/O)(sample A) layers were extremely low at 423K, and the estimated diffusion coefficients were $2.2{\times}10^{-15}cm^2/s$ for Cd and $3.0{\times}10^{-15}cm^2/s$ for S.

• Journal of environmental and Sanitary engineering
• /
• 제10권3호
• /
• pp.105-114
• /
• 1995

There has been increasing awareness on the importance of not only removal of organic materials but also sterilization of microbial cell in the drinking water purification research, so there has been many researches on that area. This study has been designed to analyze the effects of $TiO_{2}$ and ZnO coated on activated carbon on Escherichia coli. In this study, the sterilization power was analyzed by (1) variation of $TiO_{2}$ and ZnO concentration coated on activated carbon (2) variation of UV intensity. In addition, the kinetics between exposure time and sterilization velocity was viewed by the method of Chick. The results are as follows. 1. Survival ratio of E. coli decreased as time goes on in application of $TiO_{2}$, ZnO and $TiO_{2}{\cdot}ZnO$. In $TiO_{2}$ and ZnO, the effect increased upto certain concentration, but decreased there-after. In $TiO_{2}{\cdot}ZnO$, the effect of sterilization was in similar way among 3 combinations. 2. Survival ratio of E. coli decreased proportionately to an increase of light intensity in ZnO and $TiO_{2}{\cdit}ZnO$. In $TiO_{2}$, the survival ratio differed over extent of irradiation but the difference over the light intensity was not significant. 3. When Chick's law of sterilization was applied, m values of three concentrations of $TiO_{2}$ were 1.57,0.98, 1.96 respectively. M values of three concentration of ZnO were 1.10, 1.18,0. 11 respectively and those of three combination of $TiO_{2}{\cdot}ZnO$ were 1.17, 1.24, 1.74 respectively.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
• /
• 제24권1호
• /
• pp.27-34
• /
• 2018

In this work, nano ZnO was introduced into low density poly ethylene (LDPE) composites films with various contents (0, 0.5, 1.0, 3.0 and 5.0 wt%) by melt-extrusion. Their basic properties such as crystallinity, chemical bonds and surface morphology were examined by XRD, FTIR and SEM. XRD patterns and FTIR peaks intensity were increased in proportion to the ZnO contents. SEM images showed well dispersed nano ZnO in LDPE composite films. Antimicrobial functionality of LDPE-nano ZnO composite films was also studied and the presence of nano ZnO resulted in significant improvement of antimicrobial functionality compared to the pure LDPE film. To evaluate influence of nano ZnO on LDPE properties required as packaging material, thermal, mechanical, gas barrier and optical properties of LDPE-nano ZnO composite films were characterized with various analytical techniques including TGA, UTM, OTR, WVTR and UV-Vis spectroscopy. As a result, except optical and mechanical properties of LDPE, no significant effects were found in other properties. Opacity of pure LDPE was greatly increased with increasing concentration of nano ZnO and tensile strength was also improved at 0.5wt% ZnO content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• 제24권11호
• /
• pp.920-924
• /
• 2011

ZnO crystals with belt and comb shapes were synthesized without any catalysts through a simple thermal oxidation of ZnS powder in alumina crucible under air atmosphere. X-ray diffraction (XRD) pattern revealed that the ZnO crystals had wurtzite structure of hexagonal phase. Energy dispersive x-ray (EDX) spectra showed that the ZnO was of high purity. In the cathodoluminescece spectra obtained for the ZnO crystals with belt and comb shapes, a strong ultraviolet emission centered at 380nm was observed, which indicates the ZnO crystal has high crystalline quality.