• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.54-54
• /
• 2010

Zinc oxide is metal oxide semiconductor with the 3.37 eV bandgap energy. Zinc oxide is very attractive materials for many application fields. Zinc Oxide has many advantages such as high conductivity and good transmittance in visible region. Also it is cheaper than other semiconductor materials such as indium tin oxide (ITO). Therefore, ZnO is alternative material for ITO. ZnO is attracting attention for its application to transparent conductive oxide (TCO) films, surface acoustic wave (SAW), films bulk acoustic resonator (FBAR), piezoelectric materials, gas-sensing, solar cells and photocatalyst. In this study, we synthesized ZnO nanoparticles and defined their physical and chemical properties. Also we studied about the application of ZnO nanoparticles as a photocatalyst and try to find a enhancement photocatalytic activity of ZnO nanorticles.. We synthesized ZnO nanoparticles using spray-pyrolysis method and defined the physical and optical properties of ZnO nanoparticles in experiment I. When the ZnO are exposed to UV light, reduction and oxidation(REDOX) reaction will occur on the ZnO surface and generate ${O_2}^-$ and OH radicals. These powerful oxidizing agents are proven to be effective in decomposition of the harmful organic materials and convert them into $CO_2$ and $H_2O$. Therefore, we investigated that the photocatalytic activity was increased through the surface modification of synthesized ZnO nanoparticles. In experiment II, we studied on the stability of ZnO nanoparticles in water. It is well known that ZnO is unstable in water in comparison with $TiO_2$. $Zn(OH)_2$ was formed at the ZnO surface and ZnO become inactive as a photocatalyst when ZnO is present in the solution. Therefore, we prepared synthesized ZnO nanoparticles that were immersed in the water and dried in the oven. After that, we measured photocatalytic activities of prepared samples and find the cause of their photocatalytic activity changes.

• 한국진공학회지
• /
• 제10권2호
• /
• pp.213-218
• /
• 2001

분무열분해법으로 유리기판 위에 ZnO와 ZnO:In 박막을 성장시켰다. 성장된 ZnO 박막은 hexagonal 구조를 이루고, 격자상수 a=3.242 $\AA$, c=5.237 $\AA$였고, (002) 방향으로 선택 성장되었다. In을 0~6.03 at. % 불순물로 첨가하여 성장시킨 ZnO:In박막은 ZnO 박막의 결정구조와 같고 격자상수가 약간 증가하였다. ZnO:In 박막의 금속 이온의 비는 분무용액의 금속 이온의 비와 거의 일치하였다. ZnO:In 박막의 최소 비저항과 최대 운반자 농도는 In를 2.76 at % 불순물로 첨가하여 성장시킨 경우였는데, 그 값은 각각 19.1 $\Omega\cdot\textrm{cm}$, $2.11\times10^{19}\textrm{cm}^{-3]$이었다. In를 3.93 at. % 불순물로 첨가하여 성장시킨 ZnO:In 박막 경우 400~800 nm 영역에서의 광투과율은 95% 이상이었다.

• 조명전기설비학회논문지
• /
• 제21권10호
• /
• pp.82-88
• /
• 2007

이 논문에는 교류전압에서 ZnO 피뢰기 소자의 열적 전기적 특성을 기술하였다. ZnO 피뢰기 소자의 누설전류는 시간의 변화에 따라 측정하였다. ZnO 피뢰기 소자의 온도분포를 열화상카메라에 의해 관측하였다. ZnO 피뢰기 소자의 열화 및 열폭주 현상은 열발생과 열방산을 결정짓는 ZnO 피뢰기 소자의 온도한계와 밀접한 관계가 있다. ZnO 피뢰기 소자의 저항은 ZnO 피뢰기 소자의 온도와 누설전류에 의해 민감하게 변화한다. 결론적으로 ZnO 피뢰기 소자의 열화 및 열폭주 현상은 ZnO 피뢰기 소자의 온도와 소자를 통해 흐르는 누설전류에 상당히 의존적인 것으로 나타났다.

• 한국세라믹학회지
• /
• 제37권4호
• /
• pp.314-319
• /
• 2000

Microstructueral development and electrical properties in ZnO-Bi2O3-ZnAl2O4 system were investigated with ZnAl2O4 content(0.1~1.0 mol%). The shrinakge of specimens started around $700^{\circ}C$ and finished at 110$0^{\circ}C$, reaching a maximum shrinkage rate at 80$0^{\circ}C$. The shrinkage rate is strongly related to the fromation of a Bi-rich liquid. The increase of the ZnAl2O4 content inhibited the grain growth of ZnO. Most of ZnAl2O4 particles located at the grain boundaries were about 2~3${\mu}{\textrm}{m}$. ZnO grain size changed little up to 110$0^{\circ}C$, but increased markedly above 115$0^{\circ}C$, especially at lower ZnAl2O4 content. Drastic decreasing in breakdown voltage(Vb) with increasing temperature is expected to be dependent on the ZnO grain size and the distribution of the largest grains between the electrode. The nonlinear I-V characteristic was significantly influenced by the ZnAl2O4 content, which exhibited a maximum value at about 15${\mu}{\textrm}{m}$ of ZnO grain size.

• 한국세라믹학회지
• /
• 제30권11호
• /
• pp.955-961
• /
• 1993

Sintering behavior and microstructure development in the system ZnO-Bi2O3-CoO-Zn7Sb2O12 with Zn7Sb2O12 content(0.1mol%~2mol%) were studied. The pyrochlore phase was formed by the reaction of the Zn7Sb2O12 with Bi2O3 phase during heating (below 90$0^{\circ}C$). The formation temperature of the liquid phase (Bi2O3) was dependent on the Zn7Sb2O12 contents (about 74$0^{\circ}C$ for Bi2O3/Zn7Sb2O12>1 by the eutectic melting in the ZnOBi2O3 system, and about 110$0^{\circ}C$ for Bi2O3/Zn7Sb2O12 1 by the decomposition of pyrochlore phase). Hence, sintering behavior and microstructure development were determined virtually by the Bi2O3/Zn7Sb2O12 ratio, which were promoted by liquid (Bi2O3) phase and retarded by the pyrochlore (or spinel) phase. The grain growth of ZnO during sintering was sluggish with increasing Zn7Sb2O12 contents.

• 한국재료학회지
• /
• 제28권10호
• /
• pp.578-582
• /
• 2018

ZnO crystals with different morphologies are synthesized through thermal evaporation of the mixture of Zn and Cu powder in air at atmospheric pressure. ZnO crystals with wire shape are synthesized when the process is performed at $1,000^{\circ}C$, while tetrapod-shaped ZnO crystals begin to form at $1,100^{\circ}C$. The wire-shaped ZnO crystals form even at $1,000^{\circ}C$, indicating that Cu acts as a reducing agent. As the temperature increases to $1,200^{\circ}C$, a large quantity of tetrapod-shaped ZnO crystals form and their size also increases. In addition to the tetrapods, rod-shaped ZnO crystals are observed. The atomic ratio of Zn and O in the ZnO crystals is approximately 1:1 with an increasing process temperature from $1,000^{\circ}C$ to $1,200^{\circ}C$. For the ZnO crystals synthesized at $1,000^{\circ}C$, no luminescence spectrum is observed. A weak visible luminescence is detected for the ZnO crystals prepared at $1,100^{\circ}C$. Ultraviolet and visible luminescence peaks with strong intensities are observed in the luminescence spectrum of the ZnO crystals formed at $1,200^{\circ}C$.

• 한국세라믹학회지
• /
• 제41권1호
• /
• pp.57-61
• /
• 2004

Zinc Oxide (ZnO)은 wurtzite 결정구조를 가지고 있으며, 밴드갭 에너지가 약 3.3eV로 반도성 산화물이다. $In_2O_3$이 첨가된 ZnO 박막을 점자빔증착법을 이용하여 1737F 유리기판에 제조하였다. $400^{\circ}C$의 증착온도에서 $In_2O_3$의 첨가량에 따른 ZnO 박막의 결정성, 미세구조를 비롯한 전기.광학적 특성을 조사하였다. 첨가되는 $In_2O_3$의 양에 따라 투명전도성 산화막으로써의 ZnO 박막의 특성이 변화되었다. $In_2O_3$의 첨가량이 감소할수록 비정질상에서 결정성의 ZnO 막을 얻을 수 있었다. 0.2at%의 $In_2O_3$가 첨가된 출발물질에서 제조된 $In_2O_3$-doped ZnO막은 약 $6.0 {\times} 10^{-3} {\Omega}cm$ 정도의 비저항값과 가시광선 영역에서 85% 이상의 광투과도를 나타내었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.112-112
• /
• 2010

Zinc Oxide (ZnO) thin-films were deposited according to the magnetron sputtering method. The deposited ZnO films were annealed with RTA equipment at various annealing temperatures in an vacuum ambient. The influence of the annealing temperature on the structural, electrical, and optical properties of the ZnO films was experimentally investigated, and the effect of conductivity of the ZnO active layer on the device performance of the oxide-TFT was tested. As a result, an increase of the annealing temperature was attributed to improvements of crystallinity in ZnO films. The grain size was found to lead to an increase of conductivity in the ZnO films. Fabricated ZnO TFTs with annealed ZnO active layer provided good performance in the TFT devices. Consequently, the performance of the TFT was determined by the conductivity of the ZnO film, which was related to the structural properties of the ZnO film.

• 대한금속재료학회지
• /
• 제50권3호
• /
• pp.233-236
• /
• 2012

ZnO nanowires were fabricated through thermal evaporation of Zn or ZnS powder using solar energy. The Zn or ZnS powder was heated and evaporated by sunlight. The sunlight was concentrated on the Zn or ZnS powder by a converging lens and then the Zn or ZnS powder was evaporated and oxidized in air. After oxidation, ZnO nanowires were fabricated in the focal point. Strong ultraviolet emission, which corresponds to the near band-edge emission, was observed from the ZnO nanowires synthesized using Zn powder as a source material. Meanwhile, green emission, related to intrinsic defects such as oxygen vacancies, prevailed for the ZnO nanowires fabricated using ZnS powder. No catalysts were used in the fabrication of the ZnO nanowires, which suggested the ZnO nanowires were grown by a vapor-solid mechanism.

• 한국세라믹학회지
• /
• 제30권10호
• /
• pp.819-822
• /
• 1993

The purpose of this paper is a investigation of sensing mechanism for the carbon monoxide gas in CuO infiltrated ZnO ceramics. Potential barriers between CuO and ZnO can explain the selective sensing of carbon monoxide gas in the physically contacted CuO/ZnO ceramics. A specimen having no potential barrier between CuO and ZnO was prepared to see whether the gas sensing mechanism is related to the potential barrier. CuO and ZnO was prepared to see whether the gas sensing mechanism is related to the potential barrier. CuO was painted on the non electrode sides of ZnO ceramics. The CuO painted ZnO ceramics showed that the sensitivityfor the carbon moxnoxide gas was 1.3 times as high as that for the hydrogen gas. It is almost same gas sensitivity as that of the CuO infiltrated ZnO ceramics.