• Korean Journal of Materials Research
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• v.26 no.8
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• pp.412-416
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• 2016

The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest $E_{00}$ value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.

• 전기의세계
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• v.29 no.2
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• pp.111-117
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• 1980

Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

• Proceedings of the KSMRM Conference
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• 2001.11a
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• pp.148-148
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• 2001

목적： 자기 공명 혈관 영상(MR Angiography)법으로 혈관 촬영시, 혈관 협착으로 인하여 난류 현상이 발생되는 곳에서는 영상 자체가 얻어지지 않는다. 기존에 TE를 줄이거나 또는 projection reconstruction 방법은 2차원 TOF(Time of Flight)에 적용이 되어서 좋은 결과를 얻었다. 그런데, 2차원 TOF보다는 3차원 TOF으로 보다 좋은 혈관 영상을 얻을 수가 있다. 하지만, 3차원 TOF 방법에 projection reconstruction 방법을 적용하는 데는 여러 가지 문제점이 있어서 개발되어 있는 것이 거의 없다. 본 연구에서는 3차원 TOF 방법에 projection reconstruction 방법을 적용하여서 혈관내의 난류 현상에 의한 영상의 왜곡을 극복하는 방법을 개발한다. 대상 및 방법： 3차원 projection reconstruction을 위한 pulse sequence를 실제 진단에 사용하는 GE사의 자기공명영상장치(1.5T)에 맞게 독자적으로 개발한다. GE사의 장비에서 자료를 얻어서 일반 컴퓨터에서 영상을 재구성하는 알고리즘을 자체 개발한다. 혈관에서와 비슷한 형태의 난류를 발생시킬 수 있는 기구를 만들어서 실제 혈관영상에 사용하는 방법과 개발한 방법으로 영상을 비교한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.846-851
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• 2007

In this work, the etching characteristics of $Ge_2Sb_2Te_5(GST)$ thin films were investigated using an inductively coupled plasma (ICP) of $Cl_2/Ar$ gas mixture. To analyze the etching mechanism, an optical emission spectroscopy (OES) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out. The etch rate of the GST films decreased with decreasing Ar fraction. At the same time, high selective etch rate over $SiO_2$ films was obtained and the selectivity over photoresist films decreased with increasing the he fraction. From XPS results, we found that Te halides were formed at the etching surface and Te halides limited the etch rate of the GST films.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.151-155
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• 2015

We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm^-2K^-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm^-2K^-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (N_t), which was determined to be 1.46 × 10¹² eV^-1cm^-3.

• 한국전자현미경학회:학술대회논문집
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• 2005.11a
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• pp.101-102
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• 2005

• Proceedings of the Korea Crystallographic Association Conference
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• 2007.11a
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• pp.49-49
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• 2007

• The Bulletin of The Korean Astronomical Society
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• v.34 no.1
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• pp.112-112
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• 2009

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.155-160
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• 2010

The effect of process temperature of a final annealing step in the fabrication of phase change memory (PCM) devices was investigated. Discrete PCM devices employing $Ge_2Sb_2Te_5$ (GST) films as an active element were made in a pore-style configuration, and they were annealed at various temperatures ranging from 160 to $300^{\circ}C$. The behaviors of cell resistance change from SET resistance to RESET resistance were totally different according to the annealing temperatures. There was a critical annealing temperature for the fabrication of normal PCM devices and abnormal operations were observed in some devices annealed at temperatures lower or higher than the critical temperature. Those influences of annealing temperature seem closely related to the thermal stability of a top electrode/GST/heating layer multilayer structure in the PCM devices.

• Proceedings of the KSMRM Conference
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• 2001.11a
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• pp.109-109
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• 2001

Purpose： To assess the feasibility of sequential administration of ferumoxides and mangafodi trisodium in the same imaging protocols. Method： Thirty patients underwent double-contrast enhanced MR imaging of liver usi ferumoxides (Fe-MRI) and mangafodipir trisodium (Mn-MRI) on 1.5T GE Horizon system. In twenty patients, Mn-MRI was immediately followed by Fe-MRI. In ten patients, Fe-MR was performed first, then Mn-MRI was performed immediately, In all cases, precontras T1-weighted in-phase and opposed-phase spoiled gradient echo (GRE) images an T2-weighted fast spin-echo images (TR 4000ms, TE 102ms, ETL 8-12) were obtained Fe-MRI was performed with FSE and steady state GRE (TE 10 msec, flip angle 30 sequences. Mn-MRI was performed with in-phase and opposed-phase spoiled GR sequences. The SNR changes after the use of each contrast agents were calculated.