• 보존과학회지
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• 제36권3호
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• pp.162-177
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• 2020

부여 관북리 유적에서 시행된 동 생산 및 제련과정을 살펴보기 위하여 '나'지구, '라'지구 출토동 생산 부산물(동 슬래그 및 동 도가니) 11점의 과학적 분석을 시행하였다. 분석방법은 파장분산형 X-선 형광 분석, X-선 회절 분석, 금속 현미경 관찰, 주사 전자현미경-에너지 분산형 X-선 분석기, 전계방출 전자탐침미량분석기, 라만 마이크로분광분석법을 사용하였다. 분석결과 관북리 동 슬래그에서는 주로 도가니 슬래그 및 정련 슬래그에서 전형적인 특징으로 나타나는 규산염 광물, Magnetite, Fayalite, Delafossite 등이 검출되었다. 또한 관북리 동 슬래그는 외형 및 미세조직의 양상의 특성에 따라 1. 유리질 바탕 기지 + Cu prill, 2. 유리질 바탕 기지 + Cu prill + Magnetite, 3. 규산염 광물 바탕 기지 + Cu prill, 4. 결정질(Delafossite, Magnetite)/유리질(비정질) 바탕 기지 + Cu prill, 5. Magnetite + Fayalite, 6. 청동합금 슬래그로 분류되었다. 미세조직 내에는 SiO₂, Al₂O₃, CaO, SO₄ P₂O₅, Ag₂O, Sb₂O₃ 등의 불순물이 잔재되어 있으며, 일부는 주석과 납이 합금되어 있는 것을 확인하였다. 이와 같은 결과를 통해 부여 관북리 유적에서는 동 생산과정 중 배소와 제련을 거친 동 중간생성물의 정련과 불순물이 함유된 동-주석, 또는 동-주석-납의 합금정련을 시행하였다고 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• 제26권5호
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• pp.481-489
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• 2000

This research was focused on overall examination of tissue alteration, wound healing promotion. After the hair on the dorsal surface was shaved, $5{\times}5mm$ oval skin defect was formed. Experimental wounds of right side were irradiated on every day for 90 second with Ga-Al-As semi-conductor laser. Left side wounds served as control group. The rats were sacrificed on the 1st, 3rd, 5th, 7th, 14th, 21th day. For light microscopically, parafin section were stained with H&E, MT. The outcomes were as follows : 1. On 1st day, experimental and control group were seen acute inflammatory cell infiltration, edema. 2. On the 3rd days, both groups were seen crust development, collagen, blood vessel proliferation. 3. On the 5th days, experimental group were reduced edema and inflammatory cell infiltration than control group. 4. On the 7th days, both groups were observed edema, inflammatory cell infiltration disappearance and keratinocytes motility from wound defect. 5. On the 14th days, experimental group appeared collagen, blood vessel proliferation and hair follicle than control group. 6. On the 21th days, both groups were seen normal status re-epithelization. According to the above results, The wound-healing stimulated by laser radiation involves an increased rate of epithelial growth. LLLT was confirmed that it has fibroblast, blood vessel proliferation, influence initial wound healing process.

• 한국강구조학회 논문집
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• 제23권5호
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• pp.581-593
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• 2011

스티프너로 보강된 플레이트 거더 대신에 주름 웨브를 사용하는 근본적인 장점은 얇은 판으로 형성된 편평한 웨브에서 발생하는 좌굴에 관한 불안정 문제를 해결할 수 있는 것 뿐 아니라 수직 스티프너의 필요성도 함께 해결 됨으로써 경제적인 장점을 제공받게 된다. 따라서 본 연구에서는 사인형 주름 웨브를 가진 보의 구조설계 기법과 실변수 알고리즘을 이용하여 최적화 문제를 다루도록 한다. 구조설계과정과 설계변수들은 EN 1993-1-5, DASt-R015 및 Pasternak 등(2004)을 통해서 구성하며, 주름 웨브의 전단좌굴에 대한 유효한 설계가능영역에 대해 비교, 고찰한다. 구조설계 최적화를 위해서, 목적함수는 사인형 주름 웨브 보의 중량으로 정의하여 최소중량최적화를 수행하며, 제약조건으로는 세장비, 부재력 저항능력 및 보의 허용처짐에 대해서 고려한다. 최종적으로 등분포 하중의 단순보 모델을 해석 대상으로 채택하며, 유전자 연산에 있어서 효율적인 확률변수에 대해 연구한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.323-323
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• 2014

기존의 태양전지 기술은 기술 장벽이 매우 낮고 대량 생산을 통한 단가 절감하는 구조를 가지고 있어 대규모 자본을 가진 후발 기업에게 잠식되기 쉽다. 그러나, III-V족 화합물 반도체를 이용한 집광형 고효율 태양전지는 기술 장벽이 매우 높은 기술 집약 산업이므로 독자적인 기술을 확보하게 되면 독점적인 시장을 확보 할 수 있어 미래 고부가 가치 산업으로 적합하다. 특히 III-V족 화합물 반도체 태양전지는 III족 원소(In, Ga, Al)와 V족 원소(As, P)의 조합으로 0.3 eV~2.5 eV까지 밴드갭을 가지는 다양한 박막 제조가 가능하여 다양한 흡수 대역을 가지는 태양전지 제조가 가능하기 때문에 다중 접합 태양전지 제작이 가능하다. 또한 III-V 화합물 반도체는 고온 특성이 우수하여 온도 안정성 및 신뢰성이 우수하고, 또한 집광 시 효율이 상승하는 특성이 있어 고배율 집광형 태양광 발전 시스템에 가장 적합하다. Si 태양전지의 경우 100배 이하의 집광에서 사용하나, III-V 화합물 반도체 태양전지의 경우 500~1000배 정도의 고집광이 가능하다. 이러한 특성으로 III-V 화합물 반도체 태양전지 모듈 가격을 낮출 수 있고, 따라서 Si 태양전지 시스템과 비교하여 발전 단가 면에서 경쟁력을 확보할 수 있다. III-V 화합물 반도체는 다양한 밴드갭 에너지를 가지는 박막 제조가 용이하고, 직접천이(direct bandgap) 구조를 가지고 있어 실리콘에 비해 광 흡수율이 높다. 또한 터널정션(tunnel junction)을 이용하면 광학적 손실과 전기적 소실을 최소화 하면서 다양한 밴드갭을 가지는 태양전지를 직렬 연결이 가능하여 한 번의 박막 증착 공정으로 넓은 흡수대역을 가지며 효율이 높은 다중접합 태양전지 제작이 가능하다. 이에 걸맞게 본연구에서는 화학기상증착장치(MOCVD)를 이용하여 InAsP 나노선을 코어 쉘 구조로 성장하여 태양전지를 제작하였다. P-type Dopant로는 Disilane (Si2H6)을 전구체로 사용하였다. 또한 Benzocyclobutene (BCB) 폴리머를 이용하여 Dielectric을 형성하였고 Sputtering 방법으로 증착한 ZnO을 투명 전극으로 사용하여 나노선 끝부분과 실리콘 기판에 메탈 전극을 형성하였다. 이를 통해 제작한 태양전지는 솔라시뮬레이터로 측정했을때 최고 7%에 달하는 변환효율을 나타내었다.

• 한국결정성장학회지
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• 제24권1호
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• pp.1-7
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• 2014

질화알루미늄(AlN)은 뛰어난 열적, 전기절연성 특성을 갖고 있어 반도체 기판용 재료나 전자 패키징 재료로 주목받고 있다. 질화알루미늄은 소결온도가 높고 불순물로 인한 물성저하 때문에 고순도화 및 나노원료화가 필수적이다. 본 연구에서는 RF 유도결합 열플라즈마를 이용하여 알루미늄 분말로부터 고순도의 질화알루미늄 나노분말을 합성하였다. Sheath gas로 사용된 암모니아의 유량 제어를 통해 고순도의 질화알루미늄 나노분말이 합성되는 조건을 확립하고자 하였으며 합성된 분말은 XRD, SEM, TEM, BET, FTIR, N-O분석을 통해 특성분석을 진행하였다.

• The Journal of Korean Physical Therapy
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• 제15권3호
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• pp.239-250
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• 2003

This study was performed to investigate the effect of low power laser irradiation on Substance P(SP) expression in the burned skin of the rats. Burns of about 3cm in diameter were created with $75^{\cric}C$ water on the back of the rats, and the lesion of experimental group were irradiated on days 1, 2, 3 and 4 postwounding. Control leasions were not irradiated. After burns, low power laser irradiation was applied by using 1000Hz, 830nm GaAlAs(Gallium-aluminum-arsenide) semiconductor diode laser. The expression of evaluated Substance P(SP) immunohistochemistry on rabbit anti-SP The results of this study wereas follows 1. The Substance P was expressed in the lamina I and II of dorsal horn of spinal cord. In expression of SP, the lesion of control group made SP to more induce significantly than experimental leasions. 2. SP immunoreactivity in burned leasion of spinal cord were decreased markedly 4 days after burns, and decreased gradually from 1 day to 2 days in burns which is laser irradiation These data suggest that low power laser have a pain release effect in the burned skin of the rats.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• 제42권1호
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• pp.2-8
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• 2016

Objectives: The purpose of this study was to investigate the effects of low-level laser therapy (LLLT) with a diode gallium-aluminum-arsenide (Ga-Al-As) low-level laser device on the healing and attachment of titanium implants in bone. Materials and Methods: Thirteen New Zealand white male rabbits weighing $3.0{\pm}0.5kg$ were used for this study. Dental titanium implants (3.75 mm in diameter and 8.5 mm in length, US II RBM plus fixture; Osstem, Seoul, Korea) were implanted into both femurs of each rabbit. The rabbits were randomly divided into a LLLT group and a control group. The LLLT was initiated immediately after surgery and then repeated daily for 7 consecutive days in the LLLT group. Six weeks and 12 weeks after implantation, we evaluated and compared the osseointegration of the LLLT group and control group, using histomorphometric analysis, removal torque testing, and resonance frequency analysis (RFA). The results were statistically significant when the level of probability was 0.05 or less based on a non-parametric Mann-Whitney U-test. Results: The implant survival rate was about 96%. Histologically and histomorphometrically, we observed that the titanium implants were more strongly attached in LLLT group than in control group. However, there was no significant difference between the LLLT group and control group in removal torque or RFA. Conclusion: Histologically, LLLT might promote cell-level osseointegration of titanium implants, but there was no statistically significant effects.

• 한국재료학회지
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• 제21권12호
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• pp.639-643
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• 2011

Zinc oxide as an optoelectronic device material was studied to utilize its wide band gap of 3.37 eV and high exciton biding energy of 60 meV. Using anti-site nitrogen to generate p-type zinc oxide has shown a deep acceptor level and low solubility. To increase the nitrogen solubility in zinc oxide, group 13 elements (aluminum, gallium, and indium) was co-added to nitrogen. The effect of aluminum on nitrogen solubility in a $3{\times}3{\times}2$ zinc oxide super cell containing 72 atoms was investigated using density functional theory with hybrid functionals of Heyd, Scuseria, and Ernzerhof (HSE). Aluminum and nitrogen were substituted for zinc and oxygen sites in the super cell, respectively. The band gap of the undoped super cell was calculated to be 3.36 eV from the density of states, and was in good agreement with the experimentally obtained value. Formation energies of a nitrogen molecule and nitric oxide in the zinc oxide super cell in zinc-rich conditions were lower than those in oxygen-rich conditions. When the number of nitrogen molecules near the aluminum increased from one to four in the super cell, their formation energies decreased to approach the valence band maximum to some degree. However, the acceptor level of nitrogen in zinc oxide with the co-incorporation of aluminum was still deep.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.265.2-265.2
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• 2016

Oxide thin film transistors (TFTs) have attracted considerable interest for gate diver and pixel switching devices of the active matrix (AM) liquid crystal display (LCD) and organic light emitting diode (OLED) display because of their high field effect mobility, transparency in visible light region, and low temperature processing below $300^{\circ}C$. Recently, oxide TFTs with polycrystalline In-Ga-O(IGO) channel layer reported by Ebata. et. al. showed a amazing field effect mobility of $39.1cm^2/Vs$. The reason having high field effect mobility of IGO TFTs is because $In_2O_3$ has a bixbyite structure in which linear chains of edge sharing InO6 octahedral are isotropic. In this work, we investigated the characteristics and the effects of oxygen partial pressure significantly changed the IGO thin-films and IGO TFTs transfer characteristics. IGO thin-film were fabricated by rf-magnetron sputtering with different oxygen partial pressure ($O_2/(Ar+O_2)$, $Po_2$)ratios. IGO thin film Varies depending on the oxygen partial pressure of 0.1%, 1%, 3%, 5%, 10% have been some significant changes in the electrical characteristics. Also the IGO TFTs VTH value conspicuously shifted in the positive direction, from -8 to 11V as the $Po_2$ increased from 1% to 10%. At $Po_2$ was 5%, IGO TFTs showed a high drain current on/off ratio of ${\sim}10^8$, a field-effect mobility of $84cm^2/Vs$, a threshold voltage of 1.5V, and a subthreshold slpe(SS) of 0.2V/decade from log(IDS) vs VGS.