• Journal of Conservation Science
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• v.36 no.3
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• pp.162-177
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• 2020

Research was conducted to characterize the copper production and smelting process with 11 copper smelting by-products (copper slag and copper crucible) excavated from the NA and LA areas at the Gwanbuk-ri archeological site in Buyeo. Scanning electron microscopy-energy dispersive spectroscopy, wavelength dispersive X-ray fluorescence, X-ray diffraction, and Raman microspectroscopy were employed in the analysis. The research results reveal that the copper slag from Gwanbuk-ri contained silicate oxide, magnetite, fayalite, and delafossite, which are typical characteristics of crucible slag and refined slag. The outward appearance and microstructure of the slag were grouped as follows: 1. glassy matrix + Cu prill, 2. glassy matrix + Cu prill + magnetite, 3. silicate mineral matrix + Cu prill, 4. crystalline (delafossite and magnetite) + amorphous (Cu prill), 5. magnetite + fayalite, and 6. slag from slag. The copper slags from Guanbuk-ri were found to contain residues of impurities such as SiO₂, Al₂O₃, CaO, SO₄, P₂O₅, Ag₂O, and Sb₂O₃ in their microstructure, and, in some cases, it was confirmed that copper, tin and lead are alloys. These results indicate that refining of intermediate copper(including impurities) and refining of alloys of copper(including impurities) - tin and refining of copper(including impurities) - tin - lead took place during the copper production process at Gwanbuk-ri, Buyeo.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.26 no.5
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• pp.481-489
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• 2000

This research was focused on overall examination of tissue alteration, wound healing promotion. After the hair on the dorsal surface was shaved, $5{\times}5mm$ oval skin defect was formed. Experimental wounds of right side were irradiated on every day for 90 second with Ga-Al-As semi-conductor laser. Left side wounds served as control group. The rats were sacrificed on the 1st, 3rd, 5th, 7th, 14th, 21th day. For light microscopically, parafin section were stained with H&E, MT. The outcomes were as follows : 1. On 1st day, experimental and control group were seen acute inflammatory cell infiltration, edema. 2. On the 3rd days, both groups were seen crust development, collagen, blood vessel proliferation. 3. On the 5th days, experimental group were reduced edema and inflammatory cell infiltration than control group. 4. On the 7th days, both groups were observed edema, inflammatory cell infiltration disappearance and keratinocytes motility from wound defect. 5. On the 14th days, experimental group appeared collagen, blood vessel proliferation and hair follicle than control group. 6. On the 21th days, both groups were seen normal status re-epithelization. According to the above results, The wound-healing stimulated by laser radiation involves an increased rate of epithelial growth. LLLT was confirmed that it has fibroblast, blood vessel proliferation, influence initial wound healing process.

• Journal of Korean Society of Steel Construction
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• v.23 no.5
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• pp.581-593
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• 2011

The underlying advantages of using thin-walled corrugatedwebs instead of plate girders with stiffeners are the elimination of instability problems associated with buckling of the thin-walled flat plate, and elimination of the need for transverse stiffeners, which alsoresults in economic advantages. This paper focuses on two aspects related to the structural design technique forsinusoidal corrugated web steel beams, and the optimum design of the beams using real-value genetic algorithms. The structural design process and design variables used in this optimization werecomposed with EN 1993-1-5, DASt-R015 standard and Pasternak et al. (2004), and the valid design capacity of shear buckling of the standards were compared. For the optimum structural design, the objective function, presented as the fullweight of the sinusoidal corrugated web beams, and the slenderness, member forces, and maximum deflection of the beam, were considered constraints. Finally, the simple beam under the uniform load was adopted as a numerical example, and the effective probability parameters of the genetic operators were considered to find the global minimum point.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.323-323
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• 2014

기존의 태양전지 기술은 기술 장벽이 매우 낮고 대량 생산을 통한 단가 절감하는 구조를 가지고 있어 대규모 자본을 가진 후발 기업에게 잠식되기 쉽다. 그러나, III-V족 화합물 반도체를 이용한 집광형 고효율 태양전지는 기술 장벽이 매우 높은 기술 집약 산업이므로 독자적인 기술을 확보하게 되면 독점적인 시장을 확보 할 수 있어 미래 고부가 가치 산업으로 적합하다. 특히 III-V족 화합물 반도체 태양전지는 III족 원소(In, Ga, Al)와 V족 원소(As, P)의 조합으로 0.3 eV~2.5 eV까지 밴드갭을 가지는 다양한 박막 제조가 가능하여 다양한 흡수 대역을 가지는 태양전지 제조가 가능하기 때문에 다중 접합 태양전지 제작이 가능하다. 또한 III-V 화합물 반도체는 고온 특성이 우수하여 온도 안정성 및 신뢰성이 우수하고, 또한 집광 시 효율이 상승하는 특성이 있어 고배율 집광형 태양광 발전 시스템에 가장 적합하다. Si 태양전지의 경우 100배 이하의 집광에서 사용하나, III-V 화합물 반도체 태양전지의 경우 500~1000배 정도의 고집광이 가능하다. 이러한 특성으로 III-V 화합물 반도체 태양전지 모듈 가격을 낮출 수 있고, 따라서 Si 태양전지 시스템과 비교하여 발전 단가 면에서 경쟁력을 확보할 수 있다. III-V 화합물 반도체는 다양한 밴드갭 에너지를 가지는 박막 제조가 용이하고, 직접천이(direct bandgap) 구조를 가지고 있어 실리콘에 비해 광 흡수율이 높다. 또한 터널정션(tunnel junction)을 이용하면 광학적 손실과 전기적 소실을 최소화 하면서 다양한 밴드갭을 가지는 태양전지를 직렬 연결이 가능하여 한 번의 박막 증착 공정으로 넓은 흡수대역을 가지며 효율이 높은 다중접합 태양전지 제작이 가능하다. 이에 걸맞게 본연구에서는 화학기상증착장치(MOCVD)를 이용하여 InAsP 나노선을 코어 쉘 구조로 성장하여 태양전지를 제작하였다. P-type Dopant로는 Disilane (Si2H6)을 전구체로 사용하였다. 또한 Benzocyclobutene (BCB) 폴리머를 이용하여 Dielectric을 형성하였고 Sputtering 방법으로 증착한 ZnO을 투명 전극으로 사용하여 나노선 끝부분과 실리콘 기판에 메탈 전극을 형성하였다. 이를 통해 제작한 태양전지는 솔라시뮬레이터로 측정했을때 최고 7%에 달하는 변환효율을 나타내었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.1-7
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• 2014

Aluminum nitride, which has outstanding properties such as high thermal conductivity and electrical resistivity, has been received a great attention as a substrate and packaging material of semiconductor devices. Since aluminum nitride has a high sintering temperature of 2173 K and its properties depends on the impurity level, it is necessary to synthesize high-purity and nano-sized aluminum nitride powders for the applications. In this research, we synthesized high purity aluminum nitride nanopowders from aluminum using RF induction thermal plasma system. Sheath gas (NH3) flow was controlled to establish the synthesis condition of high purity aluminum nitride nanopowders. The obtained aluminum nitride nanopowders were evaluated by XRD, SEM, TEM, BET, FTIR and N-O analysis.

• The Journal of Korean Physical Therapy
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• v.15 no.3
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• pp.239-250
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• 2003

This study was performed to investigate the effect of low power laser irradiation on Substance P(SP) expression in the burned skin of the rats. Burns of about 3cm in diameter were created with $75^{\cric}C$ water on the back of the rats, and the lesion of experimental group were irradiated on days 1, 2, 3 and 4 postwounding. Control leasions were not irradiated. After burns, low power laser irradiation was applied by using 1000Hz, 830nm GaAlAs(Gallium-aluminum-arsenide) semiconductor diode laser. The expression of evaluated Substance P(SP) immunohistochemistry on rabbit anti-SP The results of this study wereas follows 1. The Substance P was expressed in the lamina I and II of dorsal horn of spinal cord. In expression of SP, the lesion of control group made SP to more induce significantly than experimental leasions. 2. SP immunoreactivity in burned leasion of spinal cord were decreased markedly 4 days after burns, and decreased gradually from 1 day to 2 days in burns which is laser irradiation These data suggest that low power laser have a pain release effect in the burned skin of the rats.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.42 no.1
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• pp.2-8
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• 2016

Objectives: The purpose of this study was to investigate the effects of low-level laser therapy (LLLT) with a diode gallium-aluminum-arsenide (Ga-Al-As) low-level laser device on the healing and attachment of titanium implants in bone. Materials and Methods: Thirteen New Zealand white male rabbits weighing $3.0{\pm}0.5kg$ were used for this study. Dental titanium implants (3.75 mm in diameter and 8.5 mm in length, US II RBM plus fixture; Osstem, Seoul, Korea) were implanted into both femurs of each rabbit. The rabbits were randomly divided into a LLLT group and a control group. The LLLT was initiated immediately after surgery and then repeated daily for 7 consecutive days in the LLLT group. Six weeks and 12 weeks after implantation, we evaluated and compared the osseointegration of the LLLT group and control group, using histomorphometric analysis, removal torque testing, and resonance frequency analysis (RFA). The results were statistically significant when the level of probability was 0.05 or less based on a non-parametric Mann-Whitney U-test. Results: The implant survival rate was about 96%. Histologically and histomorphometrically, we observed that the titanium implants were more strongly attached in LLLT group than in control group. However, there was no significant difference between the LLLT group and control group in removal torque or RFA. Conclusion: Histologically, LLLT might promote cell-level osseointegration of titanium implants, but there was no statistically significant effects.

• Korean Journal of Materials Research
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• v.21 no.12
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• pp.639-643
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• 2011

Zinc oxide as an optoelectronic device material was studied to utilize its wide band gap of 3.37 eV and high exciton biding energy of 60 meV. Using anti-site nitrogen to generate p-type zinc oxide has shown a deep acceptor level and low solubility. To increase the nitrogen solubility in zinc oxide, group 13 elements (aluminum, gallium, and indium) was co-added to nitrogen. The effect of aluminum on nitrogen solubility in a $3{\times}3{\times}2$ zinc oxide super cell containing 72 atoms was investigated using density functional theory with hybrid functionals of Heyd, Scuseria, and Ernzerhof (HSE). Aluminum and nitrogen were substituted for zinc and oxygen sites in the super cell, respectively. The band gap of the undoped super cell was calculated to be 3.36 eV from the density of states, and was in good agreement with the experimentally obtained value. Formation energies of a nitrogen molecule and nitric oxide in the zinc oxide super cell in zinc-rich conditions were lower than those in oxygen-rich conditions. When the number of nitrogen molecules near the aluminum increased from one to four in the super cell, their formation energies decreased to approach the valence band maximum to some degree. However, the acceptor level of nitrogen in zinc oxide with the co-incorporation of aluminum was still deep.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.265.2-265.2
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• 2016

Oxide thin film transistors (TFTs) have attracted considerable interest for gate diver and pixel switching devices of the active matrix (AM) liquid crystal display (LCD) and organic light emitting diode (OLED) display because of their high field effect mobility, transparency in visible light region, and low temperature processing below $300^{\circ}C$. Recently, oxide TFTs with polycrystalline In-Ga-O(IGO) channel layer reported by Ebata. et. al. showed a amazing field effect mobility of $39.1cm^2/Vs$. The reason having high field effect mobility of IGO TFTs is because $In_2O_3$ has a bixbyite structure in which linear chains of edge sharing InO6 octahedral are isotropic. In this work, we investigated the characteristics and the effects of oxygen partial pressure significantly changed the IGO thin-films and IGO TFTs transfer characteristics. IGO thin-film were fabricated by rf-magnetron sputtering with different oxygen partial pressure ($O_2/(Ar+O_2)$, $Po_2$)ratios. IGO thin film Varies depending on the oxygen partial pressure of 0.1%, 1%, 3%, 5%, 10% have been some significant changes in the electrical characteristics. Also the IGO TFTs VTH value conspicuously shifted in the positive direction, from -8 to 11V as the $Po_2$ increased from 1% to 10%. At $Po_2$ was 5%, IGO TFTs showed a high drain current on/off ratio of ${\sim}10^8$, a field-effect mobility of $84cm^2/Vs$, a threshold voltage of 1.5V, and a subthreshold slpe(SS) of 0.2V/decade from log(IDS) vs VGS.