• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.158-158
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.333-333
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• 2016

현재까지 가장 높은 광전류 변환 효율을 나타내는 III-V 화합물 반도체의 다중접합 태양전지 대신 이보다 단순한 에피구조를 가진 단일셀 이종접합구조의 태양전지를 제안하였다. 이를 한국나노 기술원에서 MOCVD(Metalorganic Vapour Phase Epitaxy) 장비를 이용하여 에피구조를 성장하고 태양 전지를 제작해 그 특성을 조사하였다. 태양 전지는 서로 다른 orientation의 두 GaAs 기판에 각각 동일한 에피 구조로 성장되었다. GaAs 기판은 Si 도핑된 n-type 기판으로 (100) 표면이 <111>A 방향으로 2도 off 된 웨이퍼와 10도 off 된 웨이퍼가 사용되었다. 연구에서 시뮬레이션에 사용된 태양전지의 에피 구조는 맨 위 p-GaAs (p-contact 층), p-InAlP, p-InGaP의 광흡수층과 N-InAlGaP 층과 아래의 n-InAlP와 n-GaAs의 n-contact층으로 이루어져있다.태양전지는 $5mm{\times}5mm$의 면적을 가지고 있다. 그림 1은 전류-전압의 측정된 결과를 나타낸 그래프이다. 태양전지는 1 sun 조건하에서 probe를 이용해 측정되었다. 2도 off GaAs 기판 위에 성장시킨 태양전지에서는 3.7mA의 단락전류값이, 10도$^{\circ}$ off 인 샘플에서는 4.7mA의 단락전류값이 측정되었다. 반면에 전류-전압곡선으로부터 얻은 10도 off 인 태양전지의 직렬 저항값은 2도 off 인 태양전지의 약4배 정도로 나타났다. 이는 기판의 결정방향에 따라 태양전지의 내부 전하 transport에 차이가 있음을 나타낸다. TLM (Transmission Line Model) 방법에 의한 p-contact의 ohmic저항 측정에서도 이와 일치하는 결과를 얻었다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.57-62
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• 1993

In this paper, both feasible power gain and power added efficiency at the operating center frequency of 12 GHz are stressed to design a power FET with double-heterjunction structure. The variable parameters or the design are the unit gate width, the gate length, the doping density of AlGaAs, the AlGaAs thickness, the spacer thickness, the Al mole fraction, and the GaAs well thickness. The results of simulation for the FET with 1.mu.m gate length show that the power gain and the power added efficiency are 10.2 dB and 36.3% at 12GHz, respectively. An extrapolation of the relation between current gain and unilateral gain yields a 17 GHz cutoff frequency and 43GHz maximum frequency of oscillation. The calculation of the current versus voltage characteristics show that the output power of the device is about 0.62W.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.922-929
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• 1997

As the size of semiconductor devices shrinks in the horizontal as well as vertical dimension it is difficult to estimate the transport-velocity of electron because they drift in non-equilibrium with a few scattering. In this paper HYbrid Monte Carlo simulator which employs the drift-diffusion model for hole-transport and Monte Carlo model for electron-transport in order to reduce the simulation time and increase the accuracy as well has been developed and applied to analyze the electron-transport in InAlAs/InGaAs HBT which is attractive for an ultra high speed active device in high speed optical fiber transmission systems in terms of the velocity and energy distribution as well as cutoff frequency.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.449-455
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• 2011

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.4}Al_{0.6}As$ buffer layer have been investigated by using photoluminescence (PL) and time-resolved PL measurements. A 1-${\mu}m$-thick $In_{0.4}Al_{0.6}As$ buffer layers were deposited at various temperatures from $320^{\circ}C$ to $580^{\circ}C$ on a 500-nm-thick GaAs layer, and then 1-${\mu}m$-thick $In_{0.5}Al_{0.5}As$ layers were deposited at $480^{\circ}C$, followed by the deposition of the InGaAs/InAlAs MQWs. In order to study the effects of $In_{0.4}Al_{0.6}As$ layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of $In_{0.4}Al_{0.6}As$ buffer layer. The MQWs consist of three $In_{0.5}Al_{0.5}As$ wells with different well thicknesses (2.5-nm, 4.0-nm, and 6.0-nm-thick) and 10-nm-thick $In_{0.5}Al_{0.5}As$ barriers. The PL peaks from 4-nm QW and 6-nm QW were observed. However, for the MQWs on the $In_{0.4}Al_{0.6}As$ layer grown by using the largest growth temperature variation (320-$580^{\circ}C$), the PL spectrum only showed a PL peak from 6-nm QW. The carrier decay times in the 4-nm QW and 6-nm QW were measured from the emission wavelength dependence of PL decay. These results indicated that the growth temperatures of $In_{0.4}Al_{0.6}As$ layer affect the optical properties of the MQWs.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.118-122
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• 2003

Using low pressure metalorganic chemical vapor deposition (MOCVD), we have developed selectively area epitaxy (SAE). Using the developed SAE technology, we have grown AlGaAs/GaAs multi layers and InGaAs/GaAs quantum wire structures on the selectively $SiO_2$ masked GaAs substrates. We have obtained triangular shaped AlGaAs/GaAs and InGaAs/GaAs structures with sharp tips and smooth sidewalls. To rod the optimum conditions, several growth parameters such as growth rate, V/III ratio, growth temperature, and direction of the opening stripes were investigated. The emission peak from quantum wires was observed at 975 nm. With increasing of temperature the emission intensity from side wall quantum wells decreased abruptly. But the intensity from Quantum wires decreased slowly compared to that of side wall quantum wells and it became even stronger from above 50 K.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.24-25
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• 2000

After the invention of the femtosecond pulse lasers, generating and detecting the coherent optical phonons in various materials became possible. In bulk GaAs, which is a polar material, the coherent LO phonons are known to be generated by the ultrafast screening of the surface space-charge fields. However, little is known about the generation mechanisms of coherent phonons in GaAs quantum structures. (omitted)

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.3
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• pp.449-455
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• 1993

In order to investigate the improvements of relatively poor characteristics of short wave length AlGaAs/GaAs laser diodes which are useful as a light source for short distance communication systems, the low temperature $(<680^{\circ}C)$ grown AlGaAs/GaAs GRINSCH-QW laser diodes by molecular beam epitaxy have been studied by photoluminescence as a function of rapid thermal annealing (RTA) temperature. It is shown that guantum well photoluminescence intensity increased substantially by a factor of 10 after RAT at $950^{\circ}C$ for 10 sec. This is related to the reduction of non-radiative recombination in the guantum well region. The threshold current of annealed laser diode is reduced by a factor, of 4, confirming the improvement of laser diode quality by rapid thermal annealing.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.235-235
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• 2010

본 연구에서는 태양전지의 활성영역에 삽입할 InAs 양자점에 AlxGax-1As 장벽층을 삽입하여 그 두께변화에 따른 광학적 특성 변화를 photoreflectance spectroscopy (PR)과 photoluminescence (PL)를 이용하여 연구하였다. 본 연구에 사용된 InAs/AlGaAs 양자점 구조는 GaAs (100) 기판 위에 GaAs buffer layer를 500 nm 성장 ($Ts=580^{\circ}C$) 후 기판온도 $470^{\circ}C$에서 InAs 양자점, GaAs cap 층과 AlxGax-1As 장벽층 순서로 5 층의 InAs/GaAs/AlxGax-1As 양자점 구조를 형성하였다. GaAs cap 층의 두께는 4 nm로 고정하고 AlGaAs 장벽층 두께를 0~6 nm 까지 변화시켰다. 각 양자점 층 사이에 AlxGax-1As 장벽층의 삽입 유무에 따라 PR 신호에서 Franz-Keldysh oscillation (FKO)의 주기 변화가 관측되었다. AlGaAs 두께가 증가 할수록 PL 신호의 세기가 증가함을 보였으며 PL 신호의 온도의존 특성이 변화됨을 관측할 수 있었다. AlGaAs 장벽층 대신 AlAs 장벽층을 삽입한 시료에서도 유사한 경향성을 관측하였으며, 이는 양자점에 구속된 운반자의 터널링 현상과 높은 장벽층에 의한 운반자의 구속 강도의 변화에 의한 것으로 사료된다. 특히 장벽층의 유무에 따른 FKO의 변화는 시료의 표면 전기장의 변화에 기인한 것으로 운반자의 구속효과뿐만 아니라 InAs 양자점 성장중 형성된 표면결함 밀도의 변화에 의한 것으로 추정하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.111-115
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• 2001

Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strain-relaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content. The fabricated metamorphic HEMT with $0.2\mu\textrm{m}$T-gate and 40% indium content shows the excellent DC and microwave characteristics of $V_{th}-0.65V,{\;}g_{m,max}=620{\;}mS/mm,{\;}f_T120GHZ{\;}and{\;}f_{max}=210GHZ$.