• Journal of Powder Materials
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• v.19 no.6
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• pp.442-445
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• 2012

The quantum dots (QD) have unique electrical and optical properties due to quantum dot confinement effect. The optical properties of QDs are decided by various synthesis conditions. In a prior QDs study, a study on the QDs size with synthesis condition such as synthesis time and temperature is being extensively researched. However, the research on QDs size with composition ratio has hitherto received scant attention. In order to evaluate the ratio dependence of CdSe crystal, synthesis ratio of Se precursor is changed from 16.7 mol%Se to 44 mol%Se. As the increasing Se ratio, the band gap was increased. This is caused by red shift of emission. We confirmed optical property of CdSe QDs with composition ratio.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.465-472
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• 2008

Fabrication of nanostructured materials and synthesis of nanomaterials have intensively studied to realize electronic devices for nanotechnology. By using nanoporous alumina mask, nanostructured material can be fabricated in the form of uniform array. The size and the density of the nanostructured materials can be controllable by changing the pore diameter and the density of the alumina mask. This method is possible low cost and on large scale process, and feasible to contribute the fusion technology consisting of information technology, nanotechnology, and biotechnology. Therefore, these techniques provide alternative approaches for development of new electronic applications. In this paper, the fabrication technique and its applications of nanoporous alumina mask are described and nanostructured materials such as quantum dots, nanoholes, and nanorods are introduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.68-68
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• 2007

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.390-395
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• 2007

We systematically investigated the effects of InAs coverage variation, two-step annealing and an asymmetric InGaAs quantum well (QW) on the structural and optical characteristics of InAs quantum dots (QDs) by using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurement. The transition of size distribution of InAs QDs from bimodal to multi-modal was noticeably observed with increasing InAs coverage. By means of two-step annealing, it is found that significant narrowing of the luminescence linewidth (from 132 to 31 meV) from the InAs QDs occurs together with about 150 meV blueshift, compared to as-grown InAs QDs. Finally, the InAs QDs emitting at longer wavelength of $1.3\;{\mu}m$ with narrow linewidth were grown by an asymmetric InGaAs QW. The excited-state transition for the InAs QDs with an asymmetric InGaAs QW was not noticeably observed due to the large energy-level spacing between the ground states and the first excited states. The InAs QDs with an asymmetric InGaAs QW will be promising for the device applications such as $1.3\;{\mu}m$ optical-fiber communication.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.374-379
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• 2001

We have investigated the annealing effects on the optical properties of InAs quantum dots(QDs) capped with InGaAs(sample QDl), where InGaAs layer was deposited by opening Gallium, Arsenic, Indium and Arsenic shutters alternately with 3 periods, grown by molecular beam epitaxy. The emission wavelength of the sample of InAs QDs capped by GaAs barriers was observed to be blue-shifted as the annealing temperature was increased. On the other hand, the photoluminescence(PL) peak position of sample QD1 was observed to be red-shifted at the annealing temperature of up to $600^{\circ}C$ and, then, it was found to be blue-shifted at temperatures ranging from 700 to $800^{\circ}C$. The full width at half maximum values of sample QD1 subjected to annealing treatments show different behavior compared to typical InAs quantum dot structures.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.87-125
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• 2000

A new paradigm of crystal growth was suggested in a charged cluster model, where charged clusters of nanometer size are suspended in the gas phase in most thin film processes and are a major flux for thin film growth. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in gold and tungsten evaporation. These results imply new insights as to the low pressure diamond synthesis without hydrogen, epitaxial growth, selective deposition and fabrication of quantum dots, nanometer-sized powders and nanowires or nanotubes. Based on this concept, we produced such quantum dot structures of carbon, silicon, gold and tungsten. Charged clusters land preferably on conducting substrates over on insulating substrates, resulting in selective deposition. if the behavior of selective deposition is properly controlled, charged clusters can make highly anisotropic growth, leading to nanowires or nanotubes.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.08a
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• pp.123-123
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.52.2-52.2
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• 2008

• Carbon letters
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• v.21
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• pp.8-15
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• 2017

The thermoelectric Seebeck and Peltier effects of a single walled carbon nanotube (SWCNT) quantum dot nanodevice are investigated, taking into consideration a certain value of applied tensile strain and induced ac-field with frequency in the terahertz (THz) range. This device is modeled as a SWCNT quantum dot connected to metallic leads. These two metallic leads operate as a source and a drain. In this three-terminal device, the conducting substance is the gate electrode. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube channel. The substances at the carbon nanotube quantum dot/metal contact are controlled by the back gate. Results show that both the Seebeck and Peltier coefficients have random oscillation as a function of gate voltage in the Coulomb blockade regime for all types of SWCNT quantum dots. Also, the values of both the Seebeck and Peltier coefficients are enhanced, mainly due to the induced tensile strain. Results show that the three types of SWCNT quantum dot are good thermoelectric nanodevices for energy harvesting (Seebeck effect) and good coolers for nanoelectronic devices (Peltier effect).

• Korean Journal of Optics and Photonics
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• v.35 no.3
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• pp.95-106
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• 2024

In the 21st century, white light-emitting diodes (LEDs) are widely used as backlighting for liquid crystal displays and as a light source for general illumination. However, white LEDs used in lighting often use a single yellow phosphor on top of a blue LED chip, which lacks the ability to reproduce natural colors in objects under conventional illumination accurately. Recently, researchers have been actively working on realizing high color-rendering lighting by incorporating red quantum dots to improve the spectrum in the long-wavelength band, which is deficient in conventional white LEDs. In particular, how to develop and apply remote quantum dot components to ensure long-term reliability is currently under active research. This paper introduces recent research on remote quantum dot components and the current status of developing high color-rendering lightings with them. Especially, we focus on various factors that are important to consider in optimizing the optical structure of the quantum dot components and discuss the future directions and prospects of research for high color-rendering lighting technology.