• Tribology and Lubricants
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• v.31 no.6
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• pp.264-271
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• 2015

Adhesion force of nanomaterials such as nanoparticle, nanowire, and nanorods should be significantly considered for its mechanical applications. However, examination of the adhesion force is limited since it is technically challenging to carry out experiments with such small objects. Therefore, in this work, molecular dynamics simulation (MDS) was conducted to determine the adhesion force between a nanowire and a flat surface, which could not be readily assessed through experiments. The adhesion force of a cylindrical-shaped nanowire was assessed by performing MDS and applying an equation of Van der Waals interaction. Simulation was conducted in two steps: indentation of a spherical tip on the flat surface and indentation of a cylinder on the flat surface, because the purpose of the simulation was comparing the results of the simulation and calculation of the Van der Waals interaction equation. From the simulation, Hamaker constant used for the equation of Van der Waals interaction was determined to be 2.93 °ø 10?18 J. Using this constant, the adhesion force of the nanowire on the flat surface was readily estimated by calculating Van der Waals equation to be approximately 65~89 nN with respect to the diameter of the nanowire. Moreover, the adhesion force of the nanowire was determined to be 52~77 nN from the simulation It was observed that there was a slight discrepancy (approximately 15~25%) between the results of the simulation and the theoretical calculation. Thus, it was confirmed that the calculation of Van der Waals interaction could be utilized to assess the adhesion force of the nanowire.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.223-227
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• 2010

Recently, one-dimensional semiconducting nanomaterials have attracted considerable interest for their potential as building blocks for fabricating various nanodevices. Among these semiconducting nanomaterials,, $SnO_2$ nanostructures including nanowires, nanorods, nanobelts, and nanotubes were successfully synthesized and their electrochemical properties were evaluated. Although $SnO_2$ nanowires and nanobelts exhibit fascinating gas sensing characteristics, there are still significant difficulties in using them for device applications. The crucial problem is the alignment of the nanowires. Each nanowire should be attached on each die using arduous e-beam or photolithography, which is quite an undesirable process in terms of mass production in the current semiconductor industry. In this study, a simple process for making sensitive $SnO_2$ nanowire-based gas sensors by using a standard semiconducting fabrication process was studied. The nanowires were aligned in-situ during nanowire synthesis by thermal CVD process and a nanowire network structure between the electrodes was obtained. The $SnO_2$ nanowire network was floated upon the Si substrate by separating an Au catalyst between the electrodes. As the electric current is transported along the networks of the nanowires, not along the surface layer on the substrate, the gas sensitivities could be maximized in this networked and floated structure. By varying the nanowire density and the distance between the electrodes, several types of nanowire network were fabricated. The $NO_2$ gas sensitivity was 30~200 when the $NO_2$ concentration was 5~20ppm. The response time was ca. 30~110 sec.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.20-20
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• 2007

Nanowire-based field-effect transistors (FETs) decorated with nanoparticles have been greatly paid attention as nonvolatile memory devices of next generation due to their excellent transportation ability of charge carriers in the channel and outstanding capability of charge trapping in the floating gate. In this work, top-gate single ZnO nanowire-based FETs with and without Au nanoparticles were fabricated and their memory effects were characterized. Using thermal evaporation and rapid thermal annealing processes, Au nanoparticles were formed on an $Al_2O_3$ layer which was semi cylindrically coated on a single ZnO nanowire. The family of $I_{DS}-V_{GS}$ curves for the double sweep of the gate voltage at $V_{DS}$ = 1 V was obtained. The device decorated with nanoparticles shows giant hysterisis loops with ${\Delta}V_{th}$ = 2 V, indicating a significant charge storage effect. Note that the hysterisis loops are clockwise which result from the tunneling of the charge carriers from the nanowire into the nanoparticles. On the other hand, the device without nanoparticles shows a negligible countclockwise hysterisis loop which reveals that the influence of oxide trap charges or mobile ions is negligible. Therefore, the charge storage effect mainly comes from the nanoparticles decorated on the nanowire, which obviously demonstrates that the top-gate single ZnO nanowire-based FETs decorated with Au nanoparticles are the good candidate for the application in the nonvolatile memory devices of next generation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.10-14
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• 2008

We synthesized GaN nanowires with high quality using the vapor phase epitaxy technique. The GaN nanowires were obtained at a temperature of $950^{\circ}C$. The Ar and $NH_3$ flow rates were 1000 sccm and 50 sccm, respectively. The shape of the GaN nanowires was confirmed through FESEM analysis. We were able to conclude that the GaN nanowires synthesized via vapor-solid (VLS) mechanism when the source was closed to the substrate. On the other side, the VS mechanism changed to vapor-liquid-solid (VLS) as the source and the substrate became more distant. Therefore, we can suggest that the large amount of Ga source from initial growth interrupt the role of catalyst on the substrate.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.134-138
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• 2014

One-dimensional nanostructures such as nanowires have been extensively investigated as a promising type of material for applications of nanoscale technology. The fabrication of single-nanowire devices are consequently important and interesting. This study introduced a feasible method for growing CuO nanowires on Cu foils. The nanowires had diameters of 10~150 nm and lengths of more than $7{\mu}m$ and were grown by means of thermal oxidation in a vacuum. They were entirely and uniformly grown over the Cu foil surfaces and could be extracted and dispersed in an ethanol solution for further purposes. In addition, a simple fabrication method for realizing device functionality from a single CuO nanowire was reported. Fabricated devices were carefully checked by field-emission scanning electron microscopy (SEM). The probability of the realization of a single-CuO-nanowire device relative to that of all other types was estimated to be around 25%. Finally, the I-V characteristics of the devices were analyzed.

• Korean Journal of Materials Research
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• v.25 no.5
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• pp.238-246
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• 2015

$H_2S$ is a flammable toxic gas that can be produced in plants, mines, and industries and is especially fatal to human body. In this study, CuO nanowire structure with high porosity was fabricated by deposition of copper on highly porous singlewall carbon nanotube (SWCNT) template followed by oxidation. The SWCNT template was formed on alumina substrates by the arc-discharge method. The oxidation temperatures for Cu nanowires were varied from 400 to $800^{\circ}C$. The morphology and sensing properties of the CuO nanowire sensor were characterized by FESEM, Raman spectroscopy, XPS, XRD, and currentvoltage examination. The $H_2S$ gas sensing properties were carried out at different operating temperatures using dry air as the carrier gas. The CuO nanowire structure oxidized at $800^{\circ}C$ showed the highest response at the lowest operating temperature of $150^{\circ}C$. The optimum operating temperature was shifted to higher temperature to $300^{\circ}C$ as the oxidation temperature was lowered. The results were discussed based on the mechanisms of the reaction with ionosorbed oxygen and the CuS formation reaction on the surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.95-95
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• 2009

Single-crystalline Bi nanowires have motivated many researchers to investigate novel quasi-one-dimensional phenomena such as the wire-boundary scattering effect and quantum confinement effects due to their electron effective mass (~0.001 me). Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at $270^{\circ}C$. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. However, the method is known to produce relatively lower density of nanowires than that of other nanowire growth methods for device applications. In order to increase density of nanowire, we propose a method for enhancing compressive stress which is a driving force for nanowire growth. In this work, we report that the compressive stress can be controlled by modifying a substrate structure. A combination of photolithography and a reactive ion etching technique was used to fabricate patterns on a Si substrate. It was found that the nanowire density of a Bi film grown on $100{\mu}m{\times}100{\mu}m$ pattern Si substrate increased over seven times higher than that of a Bi sample grown on a normal substrate. Our results show that density of nanowire can be enhanced by sidewall effect in optimized proper pattern sizes for the Bi nanowire growth.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.425-429
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• 2014

Half-metallic nanostructure is highly applicable in the field of Spintronics and electronic device technology. We examine the electronic properties of a ferrocene-based nanowire as a possible candidate for a half-metallic nanostructure using VASP and SIESTA. Ferrocene-based nanowire shows high stability in both binding energy simulation and molecular dynamics (MD) simulation. The density of states (DOS) and the projected DOS of the ferrocene-based nanowire indicate that one-dimensional clustering of ferrocene molecules can be explained because of p-d orbital hybridization between iron and carbon. Half-metallic property and energy dispersion at the Fermi level due to one-dimensional structure is also observed from the DOS results.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.486-486
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• 2013

Silicon nanowire devices fabricated by bottom-up methods are attracted due to their electrical, mechanical, and optical properties. Especially, to functionalize the surface of silicon nanowires by molecules has received interests. The changes in the characteristics of the molecules is delivered directly to the surface of the silicon nanowires so that the silicon nanowire can be utilized as an efficient read-out device by using the electronic state change of molecules. The surface treatment of the silicon nanowire with light-sensitive molecules can change its optical characteristics greatly. In this paper, we present the optical response of a SiNW field-effect-transistor (FET) conjugated with porphyrin molecules. We fabricated a SiNW FET and performed porphyrin conjugation on its surface. The characteristic and the optical response of the device shows a large difference after conjugation while there is not much change of the surface in the SEM observation. It attributed to the existence of few layer porphyrin molecules on the SiNW surface and efficient variation of the surface potential of the SiNW due to light irradiation.

• Progress in Superconductivity
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• v.9 no.2
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• pp.136-139
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• 2008

InAs semiconductor nanowires can provide a promising platform to integrate superconducting quantum circuit, which exploits tunable supercurrent under the operation of gate voltage. We report temperature and magnetic field dependence of the nanowire superconducting junctions, which is in agreement with the proximity-effect theory of superconductor-normal metal-superconductor weak link. Superconducting coherence length of the InAs nanowire is estimated from the fit and magnetic-field dependence of the critical current and the subgap structure of dI/dV is discussed as well.