• 센서학회지
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• 제29권4호
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• pp.227-231
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• 2020

Silver nanowire random networks are promising candidates for replacing indium tin oxide (ITO) as transparent and conductive electrodes. They can also be used as transparent heating films with self-cleaning and defogging properties. By virtue of the Joule heating effect, silver nanowire random networks can be heated when voltage bias is applied; however, they are unsuitable for long-term use. In this work, we study the Joule heating of silver nanowire random networks embedded in polymers. Silver nanowire random networks embedded in polymers exhibit breakdown under the application of electric current. Their surface morphological changes indicate that nanoparticle formation may be the main cause of this electrical breakdown. Numerical analyses are used to investigate the temperatures of the silver nanowire and substrate.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2014년도 춘계학술대회 논문집
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• pp.81-82
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• 2014

Recently it is often reported about toxic nanomaterials to organisms. In other words, it is called nanotoxicity, toxic nanomaterials have extremely toxic properties. Zinc oxide is widely used as a promising nanomaterials, but some researchers are warning that nanotype zinc oxide has nanotoxicity. One of typical zinc oxide materials is a zinc oxide nanowire, especially, there is no technique which is detecting a zinc oxide nanowire because of its geometric. In here, we use reduced graphene oxide in order to detect zinc oxide nanowire and use DNA immobilized cantilever sensor, we detect graphene wrapped zinc oxide nanowire. Detection of a zinc oxide nanowire is measured by shifting of cantilever's resonance frequency based on vibration theory. It is proved that cantilever sensor is valid for nanomaterial detection. We showed that detection of a zinc oxide nanowire is successful.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.125.2-125.2
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• 2016

Semiconductor nanowires are essential building blocks for various nanotechnologies including energy conversion, optoelectronics, and thermoelectric devices. Bottom-up synthetic approach utilizing metal catalyst and vapor phase precursor molecules (i.e., vapor - liquid - solid (VLS) method) is widely employed to grow semiconductor nanowires. Al has received attention as growth catalyst since it is free from contamination issue of Si nanowire leading to the deterioration of electrical properties. Al-catalyzed Si nanowire growth, however, unlike Au-Si system, has relatively narrow window for stable growth, showing highly tapered sidewall structure at high temperature condition. Although surface chemistry is generally known for its role on the crystal growth, it is still unclear how surface adsorbates such as hydrogen atoms and the nanowire sidewall morphology interrelate in VLS growth. Here, we use real-time in situ infrared spectroscopy to confirm the presence of surface hydrogen atoms chemisorbed on Si nanowire sidewalls grown from Al catalyst and demonstrate they are necessary to prevent unwanted tapering of nanowire. We analyze the surface coverage of hydrogen atoms quantitatively via comparison of Si-H vibration modes measured during growth with those obtained from postgrowth measurement. Our findings suggest that the surface adsorbed hydrogen plays a critical role in preventing nanowire sidewall tapering and provide new insights for the role of surface chemistry in VLS growth.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.30.2-30.2
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• 2010

Nano-scale p-n junction can generate various nano-scale functional devices such as nanowire light emitting diode, nanowire solar cell, and nanowire sensor. The core shell type nanowire p-n junction has been considered for the high efficient devices in many previous reports. On the other hand, although device efficiency is relatively lower, the cross bar type p-n junction has simple topological structure, suggested by C.M. Lieber group, to integrate easily many p-n junction devices in one board. In this study, for the integration of the cross bar nanowire p-n junction device, a simple fabrication route, employed dielectrophoretic array and direct printing techniques, was demonstrated by the successful fabrication and programmable integration of the nanowire cross bar p-n junction solar cell. This direct printing process will give the single nanowire solar cell the opportunity of the integration on the circuit board with other nanowire functional devices.

• 접착 및 계면
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• 제24권2호
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• pp.54-59
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• 2023

은 나노와이어 기반 투명전극은 우수한 전도도와 투과도, 유연성을 가지고 있어 ITO 기반의 유연전극을 대체할 수 있는 차세대 유연투명전극으로 각광받고 있다. 그러나 은 나노와이어 기반 투명전극 제작에 사용되는 은 나노와이어 용액에 대한 이해가 부족하여 전자소자 응용 시 소자의 비정상적인 작동이나 전극 필름의 박리 문제가 종종 발생하곤 한다. 본 연구에서는 은 나노와이어 용액에 대한 이해를 높이고자 은 나노와이어 용액에 사용되는 첨가제 중 하나인 hydroxypropyl methylcellulose 접착력 증진제에 대한 연구를 진행하였으며, 접착력 증진제를 첨가함에 따라 은 나노와이어 용액의 특성이 어떻게 변화되고 이러한 용액을 사용하여 제작된 은 나노와이어 필름의 특성이 어떻게 변화되는지 연구하였다. 용액의 특성으로는 극성성분의 표면장력과 분산 성분의 표면장력이 측정되었으며, 필름 특성으로는 표면 에너지와 표면 형상, 은 나노와이어 밀도, 면저항 등이 분석되었다.

• 한국정보과학회논문지:시스템및이론
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• 제37권5호
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• pp.257-271
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• 2010

Photolithography 통합 시대의 끝이 빠르게 다가옴에 따라, 최근에는 새로운 나노 스케일의 소재와 집적 방식에 기반을 둔 수많은 나노 스케일 장치와 시스템이 나타나고 있다. 특히 nanowire crossbar 구조를 이용한 다양한 reconfigurable architecture 들이 보고되고 있다. 하지만 아쉽게도 나노 스케일의 구성 요소를 이용한 이러한 고집적 시스템은 생산 단계에서 발생하는 각종 물리적 결함과 오차에 취약하며 따라서 결함에 대한 관용성 즉 defecttolerance는 nanowire reconfigurable crossbar 시스템에 있어 해결해야 할 가장 중대한 문제 중 하나라 할 수 있다. 이에 본 논문에서는 nanowire reconfigurable crossbar 시스템 상에서 사용되어질 수 있는 세 가지의 결함 회피형(defectavoidant) 로직 재할당 알고리듬을 설명하고 다양한 방식으로 평가하였다. 이에 더불어 로직 재할당시에 발생하는 비용과 이로 인해 얻어지는 repair performance를 계량적으로 상호 분석하여 최적화된 repair 방식을 찾아내는 새로운 방안을 소개하였다. 이어 다양한 파라메터들을 이용한 시뮬레이션 결과를 제시함으로써 새로 소개된 cost-driven repair 최적화 방식을 검증하였다.

• Journal of Electrical Engineering and Technology
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• 제7권3호
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• pp.396-400
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• 2012

Novel fabrication method of nanobridge array of various materials was proposed using suspended silicon nanowire array as a sacrificial template structure. Nanobridges of various materials can be simply fabricated by direct deposition with thermal evaporation on the top of prefabricated suspended silicon nanobridge arrays, which are used as a sacrificial structure. Since silicon nanowire can be easily removed by selective dry etching, nanobridge arrays of an intended material are finally obtained. In this paper, metal nanobridges of Ti/Au, around 50-200 nm in thickness and width, 5-20 ${\mu}m$ in length were fabricated to prove the advantages of the proposed nanowire or nanobridge fabrication method. The nanobridges of Ti/Au after complete removal of sacrificial silicon nanowire template were well-established and bending of nanobridge caused by the tensile stress was observed after silicon removing. Up to 50 nm and 10 ${\mu}m$ of silicon nanowire in diameter and length respectively was also very useful for nanowire templates.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.368-368
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• 2012

We report solution-processed, high-performance single-crystal organic nanowire transistors fabricated from a novel indolocarbazole (IC) derivative. The direct printing process was utilized to generate single-crystal organic nanowire arrays enabling the simultaneous synthesis, alignment and patterning of nanowires using molecular ink solutions. Using this method, single-crystal organic nanowires can easily be synthesized by self-assembly and crystallization of organic molecules within the nanoscale channels of molds, and these nanowires can then be directly transferred to specific positions on substrates to generate nanowire arrays by a direct printing process. These new molecules are particularly suitable for p-channel organic field-effect transistors (OFETs) because of the high level of crystallinity usually found in IC derivatives. Selected area diffraction (SAED) and X-ray diffraction (XRD) experiments on these solution-processed nanowires showed high crystallinity. Transistors fabricated with these nanowires gave a hole mobility as high as 1.0 cm2V-1s-1 with nanowire arrays with the direct printing process.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.156-159
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• 2013

The electrical properties of ZnO nanowire field effect transistors (FETs) have been investigated depending on various diameters of nanowires. The ZnO nanowires were synthesized with an Au catalyst on c-plane $Al_2O_3$ substrates using hot-walled pulsed laser deposition (HW-PLD). The nanowire FETs are fabricated by conventional photo-lithography. The diameter of ZnO nanowires is simply controlled by changing the thickness of the Au catalyst metal, which is confirmed by FE-SEM. It has been clearly observed that the ZnO nanowires showed different diameters simply depending on the thickness of the Au catalyst. As the diameter of ZnO nanowires increased, the threshold voltage of ZnO nanowires shifted to the negative direction systematically. The results are attributed to the difference of conductive layer in the nanowires with different diameters of nanowires, which is simply controlled by changing the catalyst thickness. The results show the possibility for the simple method of the fabrication of nanowire logic circuits using enhanced and depleted mode.

• 한국정밀공학회지
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• 제33권5호
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• pp.363-369
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• 2016

We explored localized plasmonic field enhancements using nanowire patterns to improve the sensitivity of a surface plasmon resonance (SPR) sensor. Two different materials, gold and silver, were considered for sample materials. Gold and silver nanowire patterns were fabricated by electron beam lithography for experimental measurements. The wavelength SPR sensor was also designed for these experiments. The material-dependent field enhancements on nanowire patterns were first calculated based on Maxwell's equations. Resonance wavelength shifts were indicated as changes in the refractive index from 1.33 to 1.36. The SPR sensor with silver nanowire patterns showed a much larger resonance wavelength shift than the sensor with gold nanowire patterns, in good agreement with simulation results. These results suggest that silver nanowire patterns are more efficient than gold nanowire patterns, and could be used for sensitivity enhancements in situations where biocompatibility is not a consideration.