• 제목/요약/키워드: In-situ stress

검색결과 504건 처리시간 0.029초

In situ horizontal stress effect on plastic zone around circular underground openings excavated in elastic zones

  • Komurlu, Eren;Kesimal, Ayhan;Hasanpour, Rohala
    • Geomechanics and Engineering
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    • 제8권6호
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    • pp.783-799
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    • 2015
  • In this study, effect of horizontal in situ stress on failure mechanism around underground openings excavated in isotropic, elastic rock zones is investigated. For estimating the plastic zone occurrence, an induced stress influence area approach (Bray Equations) was modified to define critical stress ratio according to the Mohr-Coulomb failure criterion. Results obtained from modified calculations were compared with results of some other analytical solutions for plastic zone thickness estimation and the numerical modelling (finite difference method software, FLAC2D) study. Plastic zone and its geometry around tunnels were analyzed for different in situ stress conditions. The modified equations gave similar results with those obtained from the other approaches. However, safer results were calculated using the modified equations for high in situ stress conditions and excessive ratio of horizontal to vertical in situ stresses. As the outcome of this study, the modified equations are suggested to use for estimating the plastic zone occurrence and its thickness around the tunnels with circular cross-section.

한반도 3차원 지중응력과 이를 고려한 터널해석에 대한 연구 (Korean Three Dimensional In-situ stresses and Tunnel Analysis Considering These Stresses)

  • 김동갑;박종관;김수정
    • 한국지반공학회:학술대회논문집
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    • 한국지반공학회 2001년도 봄 학술발표회 논문집
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    • pp.97-104
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    • 2001
  • The magnitude and the orientation of in-situ stresses contribute to ground displacement and stresses in the field of underground space. This paper investigates in-situ stresses at various depth on the basis of 392 data which were determined by over-coring and hydro-fracturing test methods in the Korea peninsula. The result shows that in-situ stress distribution are more or less non-uniform through the Granite and Gneiss sub-area, and that the K-value in the Volcanic sub-area are below 1 at the deep depth. Also, the result of three dimensional numerical analyses of tunnel shows that the direction and magnitude of displacement around tunnel are much effected by the stress difference between the maximum and the minimum horizontal stress.

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수압파쇄 현장시험을 통한 국내 지반의 초기응력 분포양상 해석 (Analysis of In-Situ Stress Regime from Hydraulic Fracturing Field Measurements in Korea)

  • 최성웅
    • 산업기술연구
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    • 제28권B호
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    • pp.111-116
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    • 2008
  • Since the hydraulic fracturing field testing method was introduced first to Korean geotechnical engineers in 1994, there have been lots of progresses in a hardware system as well as an interpretation tool. The hydrofracturing system of first generation was the pipe-line type, and it has been developed to a wire-line system at their second generation. The current up-to-date system is more compact and is able to be operated by all-in-one system. With a progress in a hardware system, the software for analyzing in-situ stress regime has also been progressed. The shut-in pressure, which is the most ambiguous parameter to be obtained from hydrofracturing pressure curves, can now be acquired automatically from the various methods. While the hardware and software for hydrofracturing tests are being developed during the last decade, the author could accumulate the field test results which can cover the almost whole area of South Korea. Currently these field data are used widely in a feasibility study or a preliminary design step for tunnel construction in Korea. Regarding the difficulties in a site selection and a test performance for the in-situ stress measurement at an off-shore area, the in-situ stress regime obtained from the field experiences in the land area can be used indirectly for the design of a sub-sea tunnel. From the hydrofracturing stress measurements, the trend of magnitude and direction of in-situ stress field was shown identically with the geological information in Korea.

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한반도 3차원 지중응력의 분포와 이를 고려한 터널해석에 대한 연구 (Three Dimensional In-situ Stress Distribution in the Southern Korean Peninsula and Its Application in Tunnel Analysis)

  • 김동갑;박종관
    • 한국지반공학회논문집
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    • 제18권2호
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    • pp.65-74
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    • 2002
  • 지중응력의 측정은 터널 및 지하구조물의 변위와 응력분포를 예측하는데 중요하다. 본 연구에서는 남부 한반도 지역의 지중응력 분포를 음력해방법과 수압파쇄법으로 측정된 새로운 380개의 자료를 통하여 재평가와 이를 고려한 삼차원 터널해석을 실시하였다. 지중응력분포의 결과에 의하면 변성암과 화강암지역의 수평응력분포는 퇴적암과 화산암의 분포에 비하여 불규칙한 경향을 보이고 있다. 화산암 지역에서는 수직응력에 대한 수평음력의 비(측압계수, K)는 150m 깊이 이상 심도에서 1보다 작다. 또한, 국내에서는 처음으로 측정된 지중응력에 대한 삼차원 방향과 크기를 동시에 그림으로 나타내었다. 삼차원 터널 해석에 의하면, 터널 주변의 변위에 대한 방향과 크기는 최대수평음력과 최소수평응력의 차이에 의하여 주로 영향을 받고 있다.

한반도지역의 현지응력장 분포 패턴 및 지질시대별 전이 추이 (Regional Distribution Pattern and Geo-historical Transition of In-situ Stress Fields in the Korean Peninsula)

  • 신중호;박찬;이병주
    • 터널과지하공간
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    • 제23권6호
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    • pp.457-469
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    • 2013
  • 국내 100여개 지역에서 측정된 460개 현지응력자료를 종합 분석하여 국내의 광역적 현지응력 분포 패턴을 분석하고, 심도-응력 및 심도-측압계수 관계식을 제시하였다. 이와 함께 한반도의 지질시대별 고응력장 변화와 최근의 지진 메카니즘에 의한 응력장 추정 결과를 통합하여, 한반도지역의 응력장 분포 패턴인 한국응력지도(Korea Stress Map)를 작성하였다. 세계의 심도-응력 관계식들과 비교를 통해, 본 연구에서 도출된 관계식의 적합성과 수 km 심도에의 유추 적용성을 확인하였다. 그리고 세계응력지도(World Stress Map)과 함께 동북아시아지역의 응력장 패턴을 분석하였다.

암반응력의 분포특성을 고려한 터널거동 분석에 관한 연구 (A study on analysis of tunnel behaviors considering the characteristics of in-situ stress distribution in rock mass)

  • 박도현;김영근
    • 한국터널지하공간학회 논문집
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    • 제9권3호
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    • pp.275-286
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    • 2007
  • 지하암반에서 지하구조물을 구축하는 경우, 지하구조물의 안정성 확보를 위한 굴착, 지보 및 대책공법은 현지 암반응력의 크기 및 방향에 큰 영향을 받게 된다. 따라서 터널과 같은 지하구조물의 설계와 안정성 해석에 있어서 현지 암반응력의 분포특성을 고려하는 것은 대단히 중요한 문제라고 할 수 있다. 본 연구에서는 암반응력을 고려한 터널설계 사례를 통하여 합리적이고, 안정적인 지하구조물 설계 방안에 대하여 고찰하고자 하였다 이를 위하여 Q-System에 의한 암반분류시 입력변수인 응력저감계수(SRF) 평가과정 및 표준지보패턴 설계 사례에 대하여 검토하였다. 또한 터널안정성 해석시 측압계수 크기 및 주응력 방향을 변수로 한 수치해석을 수행하여 터널 안정성 해석시 개선사항에 대하여 제안하였다.

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증착 속도 변화에 따른 구리와 은 박막의 실시간 고유응력 거동 (The Effect of Deposition Rate on In-Situ Intrinsic Stress Behavior in Cu and Ag Thin Films)

  • 류상;조무현;김영만
    • 대한금속재료학회지
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    • 제46권5호
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    • pp.283-288
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    • 2008
  • We observed the in-situ stress behavior of Cu and Ag thin films during deposition using a thermal evaporation method. Multi-beam curvature measurement system was used to monitor the evolution of in-situ stress in Cu and Ag thin films on 100 Si(100) substrates. The measured curvature was converted to film stress using Stoney formula. To investigate the effects of the deposition rates on the stress evolution in Cu and Ag thin films, Cu and Ag films were deposited at rates ranging from 0.1 to $3.0{\AA}/s$ for Cu and from 0.5 to $4.0{\AA}/s$ for Ag. Both Cu and Ag films showed a unique three stress stages, such as 'initial compressive', 'a tensile maximum' and followed by 'incremental compressive' stress. For both Cu and Ag films, there is no remarkable effect of deposition rate on the thickness and average stress at the tensile maximum. There is, however, a definite decrease in the incremental compressive stress with increasing deposition rate.

기판 표면 조도에 따른 구리박막의 실시간 고유응력 거동 (The Effect of Substrate Surface Roughness on In-Situ Intrinsic Stress Behavior in Cu Thin Films)

  • 조무현;황슬기;류상;김영만
    • 대한금속재료학회지
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    • 제47권8호
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    • pp.466-473
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    • 2009
  • Our group previously observed the intrinsic stress evolution of Cu thin films during deposition by changing the deposition rate. Intrinsic stress of Cu thin films, which show Volmer-Weber growth, is reported to display three unique stress stages, initial compressive, broad tensile, and incremental compressive stress. The mechanisms of the initial compressive stress and incremental compressive stages remain subjects of debate, despite intensive research inquiries. The tensile stress stage may be related to volume contraction through grain growth and coalescence to reduce over-accumulate Cu adatoms on the film surface. The in-situ intrinsic stresses behavior in Cu thin films was investigated in the present study using a multi-beam curvature measurement system attached to a thermal evaporation device. The effect of substrate surface roughness was monitored by observed the in-situ intrinsic stress behavior in Cu thin films during deposition, using $100{\mu}m$ thick Si(111) wafer substrates with three different levels of surface roughness.