• Title/Summary/Keyword: In-process electrolytic dressing

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ELID characteristics of internal grinding wheel by using M/C (M/C에 사용되는 내면연삭 휠의 ELID 특성)

  • Kim, S. H.;Bang, J. Y.;Ji, H. G.;Choi, H.;lee, J. C.;Cheong, S. H.;Jae, T.J
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.10a
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    • pp.999-1002
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    • 1997
  • In this study, in order to set ELID conditions in the internal grinding wheel, the characteristics with the variations of grit size, output voltage and peak current were examined by using conventional machining center(M/C) equipped with electrolytic in-process dressing(EL1D). The initial working voltage was lowered and the working current was high with increasing grit size. The insulating layer thickness increased, as the final voltage increased with the output voltage and peak current. The initial wear rate of the wheel machined with ELID were measured indirectly by using surface roughness tracer. The initial wear rate of the wheel with ELID increased along with high grit size. In case that the grit size with ELID was low, the output voltage and peak current had to be increased to increase the insulating layer thickness. In case of the high grit size, the output voltage and the peak current were established low, which made the insulating layer thickness decreased.

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A Study on the ELID Grinding Properties of Single Crystal Sapphire Wafer using Ultrasonic Table (초음파 테이블을 이용한 단결정 사파이어 웨이퍼의 ELID 연삭가공 특성 연구)

  • Hwang, JinHa;Kwak, Tae-Soo;Lee, Deug-Woo;Jung, Myung-Won;Lee, Sang-Min
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.12 no.4
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    • pp.75-80
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    • 2013
  • Single crystal sapphire being used in high technology industry is a brittle material with a high hardness and excellent physical properties. ELID(Electrolytic In-Process Dressing) grinding technology was applied to material removal machining process of single crystal sapphire wafer. Ultrasonic vibration which added to material using ultrasonic table was adopted to efficient ELID grinding of sapphire materials. The evaluation of the ground surface of single crystal sapphire wafer was carried out by means of surface measuring by using AFM(Atomic Force Microscope), surface roughness tester and optical microscope device. As the results of experiment, it was shown that more efficient grinding was conducted when using ultrasonic table. In case of using #170 grinding wheel, surface roughness of ELID ground specimen in using ultrasonic table was superior to ELID ground specimen without ultrasonic table. However, In case of using #2000 grinding wheel, surface roughness of ELID ground specimen in using ultrasonic table was inferior to ELID ground specimen without ultrasonic table.