• Composites Research
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• v.15 no.4
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• pp.23-31
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• 2002

The two dimensional size effect of specimen gauge section ($length{\;}{\times}{\;}width$) was investigated on the compressive behavior of a T300/924 $\textrm{[}45/-45/0/90\textrm{]}_{3s}$, carbon fiber-epoxy laminate. A modified ICSTM compression test fixture was used together with an anti-buckling device to test 3mm thick specimens with a $30mm{\;}{\times}{\;}30mm,{\;}50mm{\;}{\times}{\;}50mm,{\;}70mm{\;}{\times}{\;}70mm{\;}and{\;}90mm{\;}{\times}{\;}90mm$ gauge length by width section. In all cases failure was sudden and occurred mainly within the gauge length. Post failure examination suggests that $0^{\circ}$ fiber microbuckling is the critical damage mechanism that causes final failure. This is the matrix dominated failure mode and its triggering depends very much on initial fiber waviness. It is suggested that manufacturing process and quality may play a significant role in determining the compressive strength. When the anti-buckling device was used on specimens, it was showed that the compressive strength with the device was slightly greater than that without the device due to surface friction between the specimen and the device by pretoque in bolts of the device. In the analysis result on influence of the anti-buckling device using the finite element method, it was found that the compressive strength with the anti-buckling device by loaded bolts was about 7% higher than actual compressive strength. Additionally, compressive tests on specimen with an open hole were performed. The local stress concentration arising from the hole dominates the strength of the laminate rather than the stresses in the bulk of the material. It is observed that the remote failure stress decreases with increasing hole size and specimen width but is generally well above the value one might predict from the elastic stress concentration factor. This suggests that the material is not ideally brittle and some stress relief occurs around the hole. X-ray radiography reveals that damage in the form of fiber microbuckling and delamination initiates at the edge of the hole at approximately 80% of the failure load and extends stably under increasing load before becoming unstable at a critical length of 2-3mm (depends on specimen geometry). This damage growth and failure are analysed by a linear cohesive zone model. Using the independently measured laminate parameters of unnotched compressive strength and in-plane fracture toughness the model predicts successfully the notched strength as a function of hole size and width.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.298-298
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• 2014

Quantum dot infrared photodetectors (QDIPs) based on Stranski-Krastanov (SK) quantum dots (QDs) have been widely explored for improved device performance using various designs of heterostructures. However, one of the biggest limitations of this approach is the "pancake" shape of the dot, with a base of 20-30 nm and a height of 4-6 nm. This limits the 3D confinement in the quantum dot and reduces the ratio of normal incidence absorption to the off-axis absorption. One of the alternative growth modes to the formation of SK QDs is a sub-monolayer (SML) deposition technique, which can achieve a much higher density, smaller size, better uniformity, and has no wetting layer as compared to the SK growth mode. Due to the advantages of SML-QDs, the SML-QDIP design has attractive features such as increased normal incidence absorption, strong in-plane quantum confinement, and narrow spectral wavelength detection as compared with SK-DWELL. In this study, we report on the improved device performance of InAs/InGaAs SML-QDIP with different composition of $Al_xGa1-_xAs$ barrier. Two SML-QDIPs (x=0.07 for sample A and x=0.20 for sample B) are grown with the 4 stacks 0.3 ML InAs. It is investigated that sample A with a confinement-enhanced (CE) $Al_{0.22}Ga_{0.78}As$ barrier had a single peak at $7.8{\mu}m$ at 77 K. However, sample B with an $Al_{0.20}Ga_{0.80}As$ barrier had three peaks at (${\sim}3.5{\mu}m$, ${\sim}5{\mu}m$, ${\sim}7{\mu}m$) due to various quantum confined transitions. The measured peak responsivities (see Fig) are ~0.45 A/W (sample A, at $7.8{\mu}m$, $V_b=-0.4V$ bias) and ~1.3 A/W (sample B, at $7{\mu}m$, $V_b=-1.5V$ bias). At 77 K, sample A and B had a detectivity of $1.2{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-0.4V$ bias) and $5.4{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-1.5V$ bias), respectively. It is obvious that the higher $D^*$ of sample B (than sample A) is mainly due to the low dark current and high responsivity.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.307-313
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• 2010

One-dimensional cubic phase silicon carbide nanowires (${\beta}$-SiC NWs) were efficiently synthesized by thermal chemical vapor deposition (TCVD) with mixtures containing Si powders and nickel chloride hexahydrate $(NiCl_2{\cdot}6H_2O)$ in an alumina boat with a carbon source of methane $(CH_4)$ gas. SEM images are shown that the growth temperature (T) of $1,300^{\circ}C$ is not enough to synthesize the SiC NWs owing to insufficient thermal energy for melting down a Si powder and decomposing the methane gas. However, the SiC NWs could be synthesized at T>$1,300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is T=$1,400^{\circ}C$. The synthesized SiC NWs have the diameter with an average range between 50~150 nm. Raman spectra clearly revealed that the synthesized SiC NWs are forming of a cubic phase (${\beta}$-SiC). Two distinct peaks at 795 and $970 cm^{-1}$ in Raman spectra of the synthesized SiC NWs at T=$1,400^{\circ}C$ represent the TO and LO mode of the bulk ${\beta}$-SiC, respectively. XRD spectra are also supported to the Raman spectra resulting in the strongest (111) peaks at $2{\Theta}=35.7^{\circ}$, which is the (111) plane peak position of 3C-SiC. Moreover, the gas flow rate of 300 sccm for methane is the optimal condition for synthesis of a large amount of ${\beta}$-SiC NW without producing the amorphous carbon structure shown at a high methane flow rate of 800 sccm. TEM images are shown two kinds of the synthesized ${\beta}$-SiC NWs structures. One is shown the defect-free ${\beta}$-SiC NWs with a (111) interplane distance of 0.25 nm, and the other is the stacking-faulted ${\beta}$-SiC NWs. Also, TEM images exhibited that two distinct SiC NWs are uniformly covered with $SiO_2$ layer with a thickness of less 2 nm.