• Journal of electromagnetic engineering and science
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• v.3 no.2
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• pp.86-90
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• 2003

A flat conversion loss in microwave mixer is hard to achieve if integrating with an image rejection filter(IRF). This is due to the change of termination condition with respect to the LO and IF frequency at RF port where the filter has 50 ohm termination property only in the RF band. This paper describes a flatness maintenance in the down mixer concerning a diode matching condition as well as an electrical length of embedding line at RF port. The implemented single balance diode mixer is suitable for a 23 ㎓ European Terrestrial Radio. RF, LO and fixed IF frequency chosen in this paper are 21.2∼22.4 ㎓, 22.4∼23.6 ㎓ and 1.2 ㎓, respectively. The measured results show a conversion loss of 8.5 ㏈, flatness of 1.2 ㏈ p-p, input P1㏈ of 7㏈m, IIP3 of 15.42 ㏈m with nominal LO power level of 10㏈m. The return loss of RF and LO port are less than - 15 ㏈ and - 12 ㏈, respectively and IF port is less than - 6 ㏈. LO/RF and LO/IF isolation are 18 ㏈ and 50 ㏈, respectively. This approach would be a helpful reference for designing up/down converter possessing a filtering element.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.11
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• pp.1198-1206
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• 2003

In this paper, a MMIC waveguide mixer module based upon the novel suggested mode converter for wave-guide-to-microstrip transition was fabricated and measured. The insertion and return losses of the mode converter was optimized by compensating the discontinuity effect between ridge and microstrip with the modification of 50 $\Omega$ microstrip line pattern. Due to the low loss nature of the mode converter, a millimeter wave MMIC mixer chip can be successfully applied as a waveguide module for mmW waveguide communication system. The measured results of the module showed the successful MMIC chip application in waveguide and the negligible degradation of the supplied chip specification.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.6 s.348
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• pp.46-52
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• 2006

We report on a high performance 94 GHz MMIC resistive mixer using 70-nm metamorphic high electron mobility transistor (MHEMT) and micro-machined W-band ring coupler. A novel 3-dimensional structure of resistive mixer was proposed in this work, and the ring coupler with the surface micro-machined dielectric-supported air-gap microstrip line (DAMLs) structure was used for high LO-RF isolation. The fabricated mixer showed an excellent LO-RF isolation of -29.3 dB and a low conversion loss of 8.9 dB at 94 GHz. To our knowledge, compared to previously reported W-band mixers, the proposed MHEMT-based resistive mixer using micro-machined ring coupler has shown superior LO-RF isolation as well as similar conversion loss.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.6 s.336
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• pp.67-74
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• 2005

In this paper, high LO-RF isolation W-band MIMIC single-balanced mixer was designed and fabricated using a branch line coupler and a $\lambda$/4 transmission line. The simulation results of the designed 94 GHz balun show return loss of -27.9 dB, coupling of -4.26 dB, and thru of -3.77 dB at 94 GHz, respectively. The isolation and phase difference were 23.5 dB and $180.2^{\circ}$ at 94 GHz. The W-band MIMIC single-balanced mixer was designed using the 0.1 $\mu$m InGaAs/InAlAs/GaAs Metamorphic HEMT diode. The fabricated MHEMT was obtained the cut-off frequency(fT) of 189 GHz and the maximum oscillation frequency(fmax) of 334 GHz. The designed MIMIC single-balanced mixer was fabricated using 0.1 $\mu$m MHEMT MIMIC Process. From the measurement, the conversion loss of the single-balanced mixer was 23.1 dB at an LO power of 10 dBm. Pl dB(1 dB compression point) of input and output were 10 dBm and -13.9 dBm respectively. The LO-RF isolations of single-balanced mixer was obtained 45.5 dB at 94.19 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.857-860
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• 2005

We reported 94 GHz, low conversion loss, and high isolation single balanced active-gate mixer based on 70 nm gate length InGaAs/InAlAs metamorphic high electron mobility transistors (MHEMTs). This mixer showed that the conversion loss and isolation characteristics were 2.5 ${\sim}$ 2.8 dB and under -30 dB, respectively, in the range of 93.65 ${\sim}$ 94.25 GHz. The low conversion loss of the mixer is mainly attributed to the high-performance of the MHEMTs exhibiting a maximum drain current density of 607 mA/mm, a extrinsic transconductance of 1015 mS/mm, a current gain cutoff frequency ($f_t$) of 330 GHz, and a maximum oscillation frequency ($f_{max}$) of 425 GHz. High isolation characteristics are due to hybrid ring coupler which adopted dielectric-supported air-gapped microstrip line (DAML) structure using surface micromachined technology. To our knowledge, these results are the best performance demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

• Journal of Korean Society of Water and Wastewater
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• v.18 no.4
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• pp.522-528
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• 2004

Microfiltration with in-line rapid coagulation for drinking water production was examined. The in-line rapid coagulation was conducted using newly developed mixing device instantaneous flash mixer. The flux decline during membrane filtration was monitored with coagulant dosage varied. Flux decline was minimized at 1.1mg/L of coagulant dosage, where streaming potential of coagulated water was near zero. The optimum dosage for the process control was explained by dimensionless distance (${\kappa}{\times}a$) of particle pairs, obtained from electrophoresis parameter describing electrostatic repulsion relative to Van der Waals energy between particle pairs in the pre-coagulated water.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.7 s.98
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• pp.681-689
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• 2005

This paper presents an ultra wide band(UWB) mixer using anti-parallel diode pair(APDP) with simulation and measurement results. The proposed mixer adopts the even-harmonic direct conversion mixing, which consists of a couple of filter, in-phase wilkinson power divider, wideband $45^{\circ}$ power divider, and APDP. The m mixer is operating over 3.1 to 4.8 GHz and producing quadrature(I/Q) outputs with a conversion loss of 18 dB and input third order intercept point($IIP_3$) of 15 dBm. I/Q outputs also have difference of about 0.5 dB and phase difference of ${\times}3^{\circ}$ and $P_{1dB}$ of 2 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.7 s.98
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• pp.753-759
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• 2005

In this paper, we have developed a new type of single balanced mixer with the RF MEMS $180^{\circ}$ hybrid coupler using surface micromachining technology. The $180^{\circ}$ hybrid coupler in this mixer is composed of the dielectric-supported air gapped microstriplines(DAMLs) which have signal line with $10{\mu}m$ height to reduce substrate dielectric loss and dielectric posts with size of $20{\mu}m{\times}20{\mu}m$ to elevate the signal line on air with stability At LO power of 7.2 dBm, the conversion loss was 15.5 dB f3r RF frequency or 57 GHz and RF power of -15 dBm. Also, we obtained the good RF to LO isolation of -40 dB at LO frequency of 58 GHz and LO power of 7.2 dBm. The main advantage of this type of mixer is that we are able to reduce the size of the chips due to integrating the MEMS passive components.

• ETRI Journal
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• v.34 no.4
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• pp.485-491
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• 2012

In this paper, the implementations of a $0.1{\mu}m$ gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process for a low noise amplifier (LNA), a subharmonically pumped (SHP) mixer, and a single-chip receiver for 70/80 GHz point-to-point communications are presented. To obtain high-gain performance and good flatness for a 15 GHz (71 GHz to 86 GHz) wideband LNA, a five-stage input/output port transmission line matching method is used. To decrease the package loss and cost, 2nd and 4th SHP mixers were designed. From the measured results, the five-stage LNA shows a gain of 23 dB and a noise figure of 4.5 dB. The 2nd and 4th SHP mixers show conversion losses of 12 dB and 17 dB and input P1dB of -1.5 dBm to 1.5 dBm. Finally, a single-chip receiver based on the 4th SHP mixer shows a gain of 6 dB, a noise figure of 6 dB, and an input P1dB of -21 dBm.

• Journal of IKEEE
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• v.3 no.1 s.4
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• pp.79-85
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• 1999

In this paper, the resistive mixer for 5.86Hz wireless LAN, main part receiving system, was designed and implemented. The noise characteristics and the linearity in the base band was superior. For the use of local oscillator of mixer, dielectric resonator of stable output and temperature characteristics was designed. For the electrical tuning by the capacitance variation of varactor diode, the microstrip line and magnetic coupling characteristics of the dielectric resonance was used. It was obtained that gain of the proposed resistive mixer containing the RF cable loss, is -13.8dB, the conversion loss of frequency converter is -12 dB, and the output power of local oscillator is 1.67 dBm.