• 제목/요약/키워드: In situ scanning tunneling microscopy

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In Situ Scanning Tunneling Microscope of Cyanide and Thiocyanate Adsorption on Pt(111)

  • Yau, Shueh-Lin;Kim, Youn-Geun;Itaya, Kingo
    • 분석과학
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    • 제8권4호
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    • pp.723-730
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    • 1995
  • Cyclic voltammetry and in situ STM were employed to examine the interfacial structures of a Pt(111) electrode in 0.1 mM KCN (pH9.5) and 0.1 mM KSCN (pH7) solutions. In situ STM atomic resolution revealed well ordered (2${\surd}$3${\times}$2${\surd}$3)$R30^{\circ}$-6CN and ($2{\times}2$)-2SCN structures within the double layer charging region. Six CN adsorbates formed a hollow hexagon, which embraced a coadsorbed $K^+$ cation. In contrast, the coadsorbed $K^+$ cations on the SCN covered Pt(111) were poorly ordered, despite adsorbed SCN formed a long range ordered ($2{\times}2$)-2SCN adlattice. In situ STM revealed the pronounced influence of potential in controlling the structures of compact layers at the proximity of a Pt electrode. Cathodic polarization facilitated the replacement of the coadsorbed cations by protons.

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Binary Compound Formation upon Copper Dissolution: STM and SXPS Results

  • Hai, N.T.M.;Huemann, S.;Hunger, R.;Jaegermann, W.;Broekmann, P.;Wandelt, K.
    • Corrosion Science and Technology
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    • 제6권4호
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    • pp.198-205
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    • 2007
  • The initial stages of electrochemical oxidative CuI film formation on Cu(111), as studied by means of Cyclic Voltammetry (CV), in-situ Scanning Tunneling Microscopy (STM) and ex-situ Synchrotron X-ray Photoemission Spectroscopy (SXPS), indicate a significant acceleration of copper oxidation in the presence of iodide anions in the electrolyte. A surface confined supersaturation with mobile CuI monomers first leads to the formation of a 2D-CuI film via nucleation and growth of a Cu/I-bilayer on-top of a pre-adsorbed iodide monolayer. Structurally, this 2D-CuI film is closely related to the (111) plane of crystalline CuI (zinc blende type). Interestingly, this film causes no significant passivation of the copper surface. In an advanced stage of copper dissolution a transition from the 2D- to a 3D-CuI growth mode can be observed.

Electropolymerization of Pyrrole Applied to Biosystem

  • Lee, Chi-Woo;Yoon, Jung-Hyun;Cho, Hyun-Woo;Bae, Sang-Eun;Lee, Kang-Bong
    • 전기화학회지
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    • 제5권4호
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    • pp.202-208
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    • 2002
  • We have been investigating electropolymerization of pyrrole in aqueous electrolyte solutions in acidic as well as in neutral conditions by in situ electrochemical quartz crystal oscillator method, where resonant frequency and resonant resistance can be monitored simultaneously with current-voltage measurements during electropolymerization of pyrrole. The properties of thin PPy films prepared on electrode surfaces depended strongly on the experimental variables of electrode potentials applied, solution pH, kinds and quantity of supporting electrolytes, added chemicals, and the mode of electrochemical method employed. We are applying our experience gained on electropolymerization of pyrrole to immobilizing biomolecules onto electrode surfaces to develop a biosensor system. In this work, we wish to present the results on electrochemical monitoring on electropolymerization of pyrrole in the presence of DNA and albumin in different electrochemical conditions. Additionally we will summarize our investigations on the miniaturization of biomolecules/PPy composites by means of scanning tunneling microscopy.

Investigation of Oxygen Incorporation in AlGaN/GaN Heterostructures

  • Jang, Ho-Won;Baik, Jeong-Min;Lee, Jong-Lam;Shin, Hyun-Joon;Lee, Jung-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제3권2호
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    • pp.96-101
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    • 2003
  • Direct evidence on the incorporation of high concentration of oxygen into undoped AlGaN layers for the AlGaN/GaN heterostuctures is provided by scanning photoemission microscopy using synchrotron radiation. In-situ annealing at $1000^{\circ}C$ resulted in a significant increase in the oxygen concentration at the AlGaN surface due to the predominant formation of Al-O bonds. The oxygen incorporation into the AlGaN layers resulting from the high reactivity of Al to oxygen can enhance the tunneling-assisted transport of electrons at the metal/AlGaN interface, leading to the reduction of the Schottky barrier height and the increase of the sheet carrier concentration near the AlGaN/GaN interface.