• 한국생물공학회:학술대회논문집
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• 2005.10a
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• pp.860-863
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• 2005

The microcapsules containing fragrant oil as functional material were prepared by in-situ polymerization with prepolymer that was made from melamine-formaldehyde (MF) as wall material of microcapsules. The effects of polymerization variables, such as the nature and concentration of surfactants, stirring rate, and stirring time, on the size and distribution of the particles were investigated. Fourier transform-infrared spectroscopy (FT-IR), thermal analysis, particle size analysis, scanning electron microscopy (SEM) observation were used to investigate the characteristics of microcapsules. Through the FT-IR and SEM analysis, we found that the prepared microcapsules were containing fragrant oil and the shape of particle was spherical. The nature and concentration of surfactants, stirring rate, and stirring time had profound effects on the particle size and particle size distribution.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.63-69
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• 1994

The Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition(UHV-ECRCVD) system whose base pressure is 1${\times}10^{9}$ torr has been constructed. In-situ cleaning prior to the epitaxial growth was carried out at 56$0^{\circ}C$ by ECR generated uniform hydrogen plasma whose density is $10^{10}/cm{3}$. The natural oxide was effectively removed without damage by applying positive DC bias(+10V) to the substrate. RHEED(Reflection High Energy Electron Diffraction) analysis has been used to confirm the removal of the surgace oxide and the streaky 2$\times$1 reconstruction of the Si surface, and the suppression of the substrate damage is anaylized by X-TEM(cross-sectional Transmission Electron Microscopy). Surface cleaning technique by ECR hydrogen plasma confirmed good quality epitaxial growth at low temperature.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.6
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• pp.354-360
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• 2009

This paper reports the oxidation mechanism of epitaxial Ni thin films grown on GaN/sapphire(0001) substrates, investigated by real-time x-ray diffraction and scanning electron microscopy. At the initial stage of oxidation process, a thin NiO layer with a thickness of ${\sim}50\;{\AA}$ was formed on top of the Ni films. The growth of such NiO layer was saturated and then served as a passive oxide layer for the further oxidation process. For the second oxidation stage, host Ni atoms diffused out to the surfaces of initially formed NiO layer through the defects running vertically to form NiO grains, while the sites that were occupied by host Ni, became voids. The crystallographic properties of resultant NiO films, such as grain size and mosaic distribution, rely highly on the oxidation temperatures.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.193-196
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• 1993

A procedure for preparing cross-sectional specimens for transmission electron microscopy(TEM)by focused ion beam(FIB)milling of specific regions of semiconductor devices is outlined. This technique enables TEM specimens to be pripared at precisely preselected area. In-situ #W thin film deposition on the top surface of desired site is complementally used to secure the TEM specimens to be less wedge shaped, which is main shortcoming of previous FIB-assisted TEM sample preparation technique. This technique is quite useful for the TEM sample priparation for fault finding and the characterization of fabrication process associated with submicron contact technologies.

• Development and Reproduction
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• v.21 no.3
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• pp.237-247
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• 2017

Mammalian spermatogenesis occurs in a precise and coordinated manner in the seminiferous tubules. One of the attempts to understand the detailed biological process during mammalian spermatogenesis at the molecular level has been to identify the testis specific genes followed by study of the testicular expression pattern of the genes. From the subtracted cDNA library of rat testis prepared using representational difference analysis (RDA) method, a complimentary DNA clone encoding type III member of a DnaJ family protein, DnaJC18, was cloned (GenBank Accession No. DQ158861). The full-length DnaJC18 cDNA has the longest open reading frame of 357 amino acids. Tissue and developmental Northern blot analysis revealed that the DnaJC18 gene was expressed specifically in testis and began to express from postnatal week 4 testis, respectively. In situ hybridization studies showed that DnaJC18 mRNA was expressed only during the maturation stages of late pachytene, round and elongated spermatids of adult rat testis. Western blot analysis with DnaJC18 antibody revealed that 41.2 kDa DnaJC18 protein was detected only in adult testis. Immunohistochemistry study further confirmed that DnaJC18 protein, was expressed in developing germ cells and the result was in concert with the in situ hybridization result. Confocal microscopy with GFP tagged DnaJC18 protein revealed that it was localized in the cytoplasm of cells. Taken together, these results suggested that testis specific DnaJC18, a member of the type III DnaJ protein family, might play a role during germ cell maturation in adult rat testis.

• The Plant Pathology Journal
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• v.39 no.3
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• pp.265-274
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• 2023

Citrus black rot is a serious disease of citrus plants caused by Alternaria citri. The current study aimed to synthesize zinc oxide nanoparticles (ZnO-NPs) by chemically or green method and investigate their antifungal activity against A. citri. The sizes of synthesized as measured by transmission electron microscope of ZnO-NPs were 88 and 65 nm for chemical and green methods, respectively. The studied prepared ZnO-NPs were applied, in vitro and in situ, at different concentrations (500, 1,000, and 2,000 ㎍/ml) in post-harvest treatment on navel orange fruits to verify the possible control effect against A. citri. Results of in vitro assay demonstrated that, at concentration 2,000 ㎍/ml, the green ZnO-NPs was able to inhibit about 61% of the fungal growth followed by 52% of chemical ZnO-NPs. In addition, scanning electron microscopy of A. citri treated in vitro with green ZnO-NPs showed swelling and deformation of conidia. Results showed also that, using a chemically and green ZnO-NPs at 2,000 ㎍/ml in situ in post-harvest treatment of orange, artificially-infected with A. citri, has reduced the disease severity to 6.92% and 9.23%, respectively, compared to 23.84% of positive control (non-treated fruits) after 20 days of storage. The out findings of this study may contribute to the development of a natural, effective, and eco-friendly strategy for eradicating harmful phytopathogenic fungi.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.202-206
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• 2012

$CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ($Co(iPr-AMD)_2$) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ($50\;{\mu}{\Omega}cm$). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$.

• Korean Journal of Microbiology
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• v.36 no.2
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• pp.136-141
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• 2000

The temporal variation of bacterial community and environmental factors, affecting on bacterial community structure were estimated monthly kom April, 1998 to May, 1999. Bacterial community structures were determined by in situ hyblidization with rRNA-targeted fluorescently labeled oligonucleotide probes (FISH) and epifluorescence microscopy; and the statistical analysis was done by SPSS program. The oligonucleotide probes used in this study were EUB338, ALFlb, GAM42a, and CF. In surface water, $\alpha$-group was related to only DOC (-0.538, p<0.05) and Chlorophyll a concentration was related to y-group (-0.630, p$\beta$-group and Cytophaga-Flavobacterium group were related to water temperature as 0.665, and 0.685 @<0.05). Between pH and $\beta$-group, there was a positive relationship (0.541, p<0.05), and Cytophaga-Flavobactevizim group was represent to correlation (0.672, p

• Applied Chemistry for Engineering
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• v.3 no.3
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• pp.499-506
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• 1992

Copolymer of Styrene and GMA(glycidyl methachylate), having reactive ratios of $r_1=0.53$, $r_2=0.44$, was synthesized in dioxane using AIBN as free radical initiator. Followed by the reaction of ethylene diamine with copolymer PGS, amine groups were introduced to the PGS(NPGS). The composition of copolymer was determined by elemental analyzer. Poly(glycidyl methacrylate) (PGMA) was obtained in benzene using AIBN as free radical initiator. The NPGS-PGMA blend of 50/50 composition was prepared by mixing these polymers in THF at $65^{\circ}C$. Glass transition temperature (Tg) of NPGS-PGMA blend was measured by DSC. The blend showed a single Tg. Accordingly, it was clear that the NPGS was compatible with PGMA. An intermolecular reaction between amine groups of NPGS and epoxy groups of PGMA imparts compatibility in the NPGS-PGMA blend. When the NPGS-PGMA blend was added to the incompatible PS-PGMA blend, PS-PGMA blend showed Tg change. Scanning Electron Micrograph(SEM) showed a fine morphology in this blend. Consequently, it was apparent that the NPGS-PGMA blend acted as a compatibilizer for the PS-PGMA blend.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.422-448
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• 1996

Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.