• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.5
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• pp.379-386
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• 2021

This study was undertaken to develop a cascade-type continuous culture system (CCCS) that combines both ICT and biotechnology (BT), for the mass production of microalgae. This system is capable of maintaining the essential culture conditions of pH, temperature, carbon dioxide, and illuminance control, which are key parameters for the growth of microalgae, and is economical for producing microalgae regardless of the season or location. It has the added advantage of providing stable and high productivity. In the current study, this system was applied to culture microalgae for 71 days, with subsequent analysis of the experimental data. The initial O.D. of the culture measured from incubator 1 was 0.006. On the 71st day of culture, the O.D.s obtained were 0.399 (incubator 1), 0.961 (incubator 2), 0.795 (incubator 3), and 0.438 (incubator 4), thereby confirming the establishment of continuous culture. Thus, we present a smart-farm based on ISMC (in-situ monitoring and control) for a mass culture method. We believe that this developed technology is suitable for commercialization, and has the potential to be applied to hydroponics-based cultivation of microalgae and cultivation of high-value-added medicinal plants as well as other plants used in functional foods, cosmetics, and medical materials.

• Journal of the Korea Organic Resources Recycling Association
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• v.6 no.1
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• pp.53-66
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• 1998

This study was carried out to investigate the typical composition of food waste from municipal solid wastes (MSW) and unit food waste generation rates from different sources in the model cities and to study the food waste management system from unit household to composting facilities. The annual average food waste composition of MSW was determined as 49% in Taejon and 52% in Chungnam Province, respectively. No big difference in food waste composition was found among the different sources. Since the paper waste generally occupied the half of food waste, over 75% of MSW was found to be compostable or biodegradable. Per capita food waste generation rate, 200~250g/capita day was determined by the direct measurement from 32 households, while 380g/capita day for Chungnam Province and 400 g/capita day for Taejon were estimated by the load count analysis In the sanitary landfills. This difference means people contribute generating food waste at outside house approximately twice as much as that at inside house. Per capita food waste generation rates from several sources were determined as follows; 166~215g/capita day at municipalities, 400g/visitor day at a first class hotel, 170g/student day at a university restaurant. Food waste generation from restaurant was strongly dependant upon it's level or quality; 670g/capita day at the high level restaurant, 190g/capita day at the middle class and 60 g/capita day at the lower class restaurant. The food waste reduction rate in a In situ fermentor showed 30~40g/kg day.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• Applied Science and Convergence Technology
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• v.27 no.1
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• pp.9-13
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• 2018

Samples of anodic oxide film used in semiconductor and display manufacturing processes were prepared at different electrolyte temperatures to investigate the corrosion resistance. The anodic oxide film was grown on aluminum alloy 6061 by using a sulfuric acid ($H_2SO_4$) electrolyte of 1.5 M at $0^{\circ}C$, $5^{\circ}C$, $10^{\circ}C$, $15^{\circ}C$, and $20^{\circ}C$. The insulating properties of the samples were evaluated by measuring the breakdown voltage, which gradually increased from 0.43 kV ($0^{\circ}C$) to 0.52 kV ($5^{\circ}C$), 1.02 kV ($10^{\circ}C$), and 1.46 kV ($15^{\circ}C$) as the electrolyte temperature was increased from $0^{\circ}C$ to $15^{\circ}C$, but then decreased to 1.24 kV ($20^{\circ}C$). To evaluate the erosion of the film by fluorine plasma, the plasma erosion and the contamination particles were measured. The plasma erosion was evaluated by measuring the breakdown voltage after exposing the film to $CF_4/O_2/Ar$ and $NF_3/O_2/Ar$ plasmas. With exposure to $CF_4/O_2/Ar$ plasma, the breakdown voltage of the film slightly decreased at $0^{\circ}C$, by 0.41 kV; however, the breakdown voltage significantly decreased at $20^{\circ}C$, by 0.83 kV. With exposure to $NF_3/O_2/Ar$ plasma, the breakdown voltage of the film slightly decreased at $0^{\circ}C$, by 0.38 kV; however, the breakdown voltage significantly decreased at $20^{\circ}C$, by 0. 77 kV. In addition, for the entire temperature range, the breakdown voltage decreased more when sample was exposed to $NF_3/O_2/Ar$ plasma than to $CF_4/O_2/Ar$ plasma. The decrease of the breakdown voltage was lower in the anodic oxide film samples that were grown slowly at lower temperatures. The rate of breakdown voltage decrease after exposure to fluorine plasma was highest at $20^{\circ}C$, indicating that the anodic oxide film was most vulnerable to erosion by fluorine plasma at that temperature. Contamination particles generated by exposure to the $CF_4/O_2/Ar$ and $NF_3/O_2/Ar$ plasmas were measured on a real-time basis. The number of contamination particles generated after the exposure to the respective plasmas was lower at $5^{\circ}C$ and higher at $0^{\circ}C$. In particular, for the entire temperature range, about five times more contamination particles were generated with exposure to $NF_3/O_2/Ar$ plasma than for exposure to $CF_4/O_2/Ar$ plasma. Observation of the surface of the anodic oxide film showed that the pore size and density of the non-treated film sample increased with the increase of the temperature. The change of the surface after exposure to fluorine plasma was greatest at $0^{\circ}C$. The generation of contamination particles by fluorine plasma exposure for the anodic oxide film prepared in the present study was different from that of previous aluminum anodic oxide films.