• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.211-214
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• 1990

Investigation of GaAs/AlGaAs QW carried out by using PL and Absorption spectroscopy. In order to get high resolution (0.76meV) and low noise, proper experimental system was set-up. From measurements, we have deduced the properties of GaAs/AlGaAs QW, such as the residual impurity, well thickness, crystal quality, interface abruptness and well thickness uniformity. Also we can obtain other properties such as sub-band absorption by using Absorption Spectroscopy.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.296-302
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• 1999

$CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$ singlecrystals of thenormal spinel structure were grown by the C.T.R. method. The optical energy band structure of these compounds had a indirect band gap at the fundamental optical absorption band edge. The direct and the indirect energy gaps are found to be 2.325 and2.179eV for $Cdln_2S_4$ , and 2.303 and 2.169eV for $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$ at 5K, respectivly. The fundamental absorption band edge of these single crystals shift to a shorter wavelength region with decreasing temperature, and the temperature dependence of the optical energy gaps in these compounds satisfy Varshni equation. The Varshni constants$\alpha and \beta$ of the direct energy gap are given by $13.39{\times}10_{-4}eV/K$ and 509 K for $Cdln_2S_4$ and $29.73{\times}10_{-4} eV/K$ and 1398K for $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$. The Varshni constants ${\alpha}and {\beta}$ of the indirect energy gap are given by 9.68${\times}10^{-4}$ eV/K 308K for $Cdln_2S_4$ and $13.33{\times}10_{-4}eV/K$ and 440K for $CdIn_2S_4 : Co^{2+}$ respectivly. The impurity optical absorption peaks due to cobalt dopant are observed in $CdIn_2S_4 : Co^{2+}$ single crystal. These impurity optical absorption peaks can be attributed to the electronic transitions between the split energy levels of $Co_{2+}$ ions located at $T_d$ symmetry site of $Cdln_2S_4$ host lattece.

• Proceedings of the KIEE Conference
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• 1999.11a
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• pp.10-12
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• 1999

Optical properties of $Zn_2AgGaSe_4$ and $Zn_2AgGaSe_4$:$Co^{2+}$ crystals are investigated in the visible and near-infrared regions at 298K. The direct band gap at 298K is 1.630eV for the $Zn_2AgGaSe_4$ and 1.567eV for the $Zn_2AgGaSe_4$:$Co^{2+}$ crystals, respectively. In the optical absorption and PAS spectrum of the $Zn_2AgGaSe_4$:$Co^{2+}$, we observed five impurity absorption peaks at $4220cm^{-1}$, $5952cm^{-1}$, $12422cm^{-1}$, $12987cm^{-1}$ and $14184cm^{-1}$. These impurity absorption peaks are attributed to the electronic transitions between the split energy levels of $Co^{2+}$ ions with Td symmetry of $Zn_2AgGaSe_4$ host lattice. The crystal field parameter Dq, the Racah parameter B and the spin-orbit coupling parameter $\lambda$ are given by $442cm^{-1}$, $425cm^{-1}$ and $440cm^{-1}$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.272-279
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• 2003

In this work Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystals were grown by the chemical transport reaction method in which the iodine was used as the transporting agent. The Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystal was found to have a monoclinic structure. The optical absorption spectra of grown crystals were investigated using a temperature-controlled UV-VIS -NIR spectrophotometer. The temperature dependence of band-edge absorption was in a good agreement with the Varshni equation. The observed impurity absorption peaks could be explained as arising from the electron transition between energy levels of Co$^{2+}$ ion sited at the T$_{d}$ symmetry point.

• Transactions on Electrical and Electronic Materials
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• v.2 no.1
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• pp.27-31
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• 2001

$\beta$-$In_2S_3$ and $\beta$-$In_2S_3$:$Co^{2+}$ thin films were grown using the spray pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap of the thin films was found to be 2.32 eV for $\beta$-$In_2S_3$ and 1.81 eV for $\beta$-$In_2S_3$:$Co^{2+}$(Co:1.0 mol%) at 198K. The direct energy band gap was found to be 2.67 eV for $\beta$-$In_2S_3$ and 2.17 eV for $\beta$-$In_2S_3$:$Co^{2+}$(Co:1.0 mol%). Impurity optical absorption peaks were observed for the ${\beta}$-$In_2S_3$:$Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory, to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry.

• Analytical Science and Technology
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• v.15 no.1
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• pp.87-90
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• 2002

The content of $SiHCl_3$ as a trace impurity in $SiCl_4$ was analyzed by Near IR spectrophotometer with optical fiber. The strong absorption bands of $5345{\sim}5116cm^{-1}$ and $4848{\sim}4349cm^{-1}$ were used for analysis of $SiHCl_3$, and the detection limit of impurity $SiCl_3$ was appeared to be 0.005 ％ in the spectrum. The quantitative analysis by Near IR spectrophotometry showed the analytical possibility of trace impurity in $SiCl_4$ without sample pre-treatment not only in the laboratory but also in the field.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.94-97
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• 2002

CdS and $CdS:Co^{2+}$ single crystals were grown by CTR method using iodine as transport material. The grown single crystals have defect chalcopyrite structure with direct band gap. The optical energy band gap was decreased according to add of Co-impurity. We can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.88-93
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• 2002

$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ and $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}:Co^{2+}$ + single crystals were grown by CTR method. The grown single crystals have defect chalcopyrite structure with lattice constant a= 5.5966A. c= 10.8042${{\AA}}$ for the pure. a= 5.6543${{\AA}}$. c= 10.8205${{\AA}}$ for the Co-doped single crystal. respectively. The optical energy band gap was given as indirect band gap. The optical energy band gap was decreased according to add of Co-impurity. Temperature dependence of optical energy band gap was fitted well to the Varshni equation. From this relation. we can deduced the entropy. enthalpy and heat capacity. Also. we can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.486-490
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• 1993

Cd4SnSea6 & Cd4SnSe6 : Co2+ single crystals were grown by the chemical transport reaction (CTR) method. The grown single crystlas crrystallize in the monoclinic structrue and have the direct band gaps. The energy gaps of them are 1.68eV for Cd4SnSea6 & Cd4SnSe6 : Co2+ at 293K. The impurity opticla absorption peaks due to cobalt dped with impurity appear at 4879cm-1, 5392cm-1 and 6247 com-1, and are attributed to the electron transitions between the split energy levels of Co2+ ion sited at Td symmetry of Cd4SnSe6 single crystal.

• Bulletin of the Korean Chemical Society
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• v.10 no.1
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• pp.5-8
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• 1989

Conventional ceramic method has been used to prepare the green phase, $Y_2BaCuO_5$, commonly observed in 90-K superconductor $YBa_2Cu_3O_P{7-{\delta}}$as an impurity phase. The powder X-ray diffraction analysis indicates that $Y_2BaCuO_5$ has an orthorhombic symmetry with lattice parameter of a = 12.2 $\AA$, b = 5.61 $\AA$, and c = 7.14 $\AA.$ The average g-value 2.13 observed in ESR spectrum is attributable to Cu2+ stabilized in $C_{4v}$ field. From the magnetic susceptibility ($\mu$eff = 2.29 BM) and the ESR measurements, it is confirmed that Cu(II) $3d^9$ electrons in $Y_2BaCuO_5$ are localized and can be characterized by Curie-Weiss behavior. Optical reflectance spectrum shows a broad absorption peak around 680 nm due to dxy ${\rightarrow}$ $dx^2-y^2$ eletronic transition.