• 한국자기학회:학술대회 개요집
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• 한국자기학회 2009년도 정기총회 및 동계학술연구발표회
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• pp.72-73
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• 2009

First-principles calculations were carried out to investigate the effects of Al impurities on bcc Fe magnetism by considering SOC. No significant solid solution hardening effect was found. Albeit the effects of the SOC by Al on spin magnetic moments were minor, there are sizeable orbital magnetic effects. It is concluded that the orbital magnetism due to the Al impurity is strongly related with the impurity screening of the system as seen in Si impurity case [3], but the effects of Al impurity is stronger than those of Si impurity in terms of orbital magnetism.

• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.909-913
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• 2002

The luminance and discharge characteristics of ac PDP may be significantly affected by a small amount of impurity gas in working gas. These impurity gases such as O$_2$, O, C and H$_2$ can be mixed in the manufacturing and /or discharge process. In this paper a small amount of impurity gas in acPDP are introduced quantitatively and the relationship between the amount of impurity gas and the luminance/discharge characteristics are investigated. The luminous efficiency decreased seriously with increase in the partial pressure of impurity gases, especially in H$_2$, O$_2$ and CO$_2$. Under the condition of the impurity gas ratio of 2${\times}$10$\^$-3/ for Ar, N2, H$_2$, CO$_2$ and O$_2$, the luminous efficiency decreased about 8%, 8%, 32%, 36% and 50%, respectively.

• E2M - 전기 전자와 첨단 소재
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• 제10권5호
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• pp.447-452
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• 1997

Effects of metal impurities in insulation of distribution cables on electrical conduction of distribution cables was investigated. Samples of Al, Cu, Fe are fabricated as metallic impurities, and measured electrical conductivity in the voltage range of 0~10 KV. Temperature dependent effect of hysteresis curves and the relationship between forward and reverse current due to impurity content are discussed.

• Journal of Magnetics
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• 제16권1호
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• pp.23-26
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• 2011

The effects of titanium ions on the crystallographic and spin-rotation transitions in iron sulfide have been examined by M$\"{o}$ssbauer spectroscopy in the temperature range of 78 to 600 K. It is noted that the titanium impurity of $Ti_{0.02}Fe_{0.98}S$ affects both the crystallographic and spin-rotation transitions of the iron sulfide. 2% impurity of $Ti^{2+}$ in FeS causes the increase in the difference between the spin rotation and ${\alpha}$ transition temperature by as much as 10 K compared with that for FeS. Both 1c and 2c structures coexist in the range between the ${\alpha}$ transition temperature and approximately 26 K, with a smaller hyperfine field corresponding to the 1c structure. The spin-rotation temperature for $Ti_{0.02}Fe_{0.98}S$ was measured to be 365 K, which is 10 K lower than the ${\alpha}$ transition temperature. By the 2% impurity of $Ti^{2+}$ in FeS the N$\'{e}$el temperature appreciably is not affected.

• 한국진공학회지
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• 제8권4A호
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• pp.482-489
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• 1999

AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

• 방사성폐기물학회지
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• 제14권2호
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• pp.91-100
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• 2016

경수로 원전을 대상으로 원전 내 방사화 대상 물질인 스테인리스강, 탄소강 및 콘크리트의 불순물 정보 적용여부에 따른 방사화 핵종 재고량을 계산하였다. 본 연구에서 탄소강은 압력용기 물질에 사용되었고, 스테인리스강은 압력용기 내부 물질에 사용되었으며, 일반 콘크리트가 생체 차폐체에 사용되었다. 금속 물질에 대해서는 참고자료 1개의 불순물 함량 정보를 적용하였고, 콘크리트 물질에서는 참고자료 5개의 불순물 함량 정보를 적용하여 평가를 수행하였다. 방사화 핵종 재고량 전산해석 시 중성자속 계산에는 MCNP 전산코드를, 방사화 계산에는 FISPACT 전산코드를 각각 사용하였다. 계산 결과, 금속 물질에서 불순물을 포함한 경우가 그렇지 않은 경우보다 비방사능이 2배 이상 높았으며, 특히 콘크리트에서는 불순물을 포함한 경우가 그렇지 않은 경우보다 최대 30배 이상 비방사능이 높게 계산되었다. 방사화 핵종의 생성반응과 재고량을 분석한 결과, 금속 구조물에서는 불순물 중 Co원소와 중성자에 의해 생성되는 방사화 핵종인 Co-60이, 콘크리트에서는 불순물 중 Co, Eu 원소와 중성자에 의해 생성되는 방사화 핵종인Co-60, Eu-152, Eu-154 이 방사성폐기물 준위 결정에 큰 영향을 미치고 있음을 확인하였다. 본 연구의 결과는 원전 해체 계획 수립 시 방사화 핵종 재고량 평가 및 규제에 활용될 수 있을 뿐 아니라, 해체를 고려한 원전 또는 원자력시설의 설계 단계에서도 참고자료로 활용 될 것으로 판단된다.

• Progress in Superconductivity
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• 제6권1호
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• pp.37-40
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• 2004

We investigated the effects of impurity doping on the electrical transport and magnetic properties of TEX>$(Ru, Sn)(Sr, La)<_2$$EuCeCu_2$$O_{z}$ samples. We found that Sn substitution fur Ru causes a significant decrease of the volume fraction of ferromagnetic phase, as well as a decrease of the temperature where the ferromagnetic component is observed. La substitution for Sr leads to an increase of the magnetic ordering temperature with a moderate change of ferromagnetic component. The experimental results are discussed in conjunction with the structural data, transport properties and a possible change of oxygen content.

• 반도체디스플레이기술학회지
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• 제4권3호
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• pp.23-27
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• 2005

The effects of the base vacuum level on a plasma display panel (PDP) produced by the vacuum in-line sealing technology were investigated. The main equipment of the vacuum in-line sealing process consists of the sealing chamber, pumping systems for evacuating, mass flow controller for introducing the plasma gases, and other measuring systems. During the sealing process, the impurity gases were fully evacuated and the panel was prevented from the adsorption of impurity gases. As a result, the brightness increased as the impurity gas density decreased, so we found that the vacuum in-line sealing process was more efficient technology an the conventional sealing process.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.66-69
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• 2017

Physically implanted surface islands of Nano Carbon Tube (NCT) and ${\alpha}-F_2O_3$ particles have been produced on Al-doped ZnO (AZO)/glass surfaces by simple and direct ND:YAG laser beam irradiation. Sheet resistance of the reconstructed surface increased by about 3.6% of over AZO. Minimal surface damage can be repaired by ND:YAG laser beam irradiation in conjunction with proper impurities. Implanted islands of NCT, which are considered to be a good conductive impurity, on AZO increased the sheet resistance by about 1.8%, while implanted islands of ${\alpha}-F_2O_3$, an insulating impurity, on AZO increased sheet resistance by about 129% compared with a laser beam treated AZO. This study provides insight regarding surface implantations of nanowires and micro-circuits, doping effects for semiconductors and optical devices, surface area and impurity effects for catalysis.

• 한국세라믹학회지
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• 제45권1호
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• pp.69-74
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• 2008

The effects of $SiO_2$ impurity on the high temperature resistivities of AIN ceramics have been investigated. When $SiO_2$ was added into 1 wt% $Y_2O_3$-doped AIN, DC resistivities have decreased and electrode polarizations disappeared. Impedance spectroscopy showed two semi-circles at $600^{\circ}C$, which were attributed to grain and grain boundary, respectively. $SiO_2$ doping had more significant effects on the grain resistivity than grain boundary resistivity, implying that doped Si acted as a donor in AIN lattice. In addition, voltage dependency of DC resistivity was observed, which might be related to dependency of size of grain boundary semi-circle on the bias voltage in impedance spectroscopy.