• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.325-328
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• 2000

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. In this paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced $\Delta$ Rp increase using buffered N- implantation with tilt and 4X-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N- concentration which is intentionally caused by Ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.103-108
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• 2009

The effect of Arsenic in copper-sulfate solutions during electrorefining of copper was investigated using scanning electron microscopy, X-ray diffraction and cyclic voltammetry analysis. Electrodeposition was carried out using Arsenic, Antimony and bismuth addition to sulfate electrolytes: 45 g/l $Cu^{2+}$ and 170 g/l $H_2SO_4$. Arsenic in sulfate electrolytes changed the morphology and structure of the copper deposits as compared with those obtained from impurity free solutions. When arsenic was present in the sulfate electrolytes, $Cu-3$As intermetallic phase was formed locally on the deposits.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.1012-1220
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• 1994

BaTiO3 ceramics doped with 0.1 to 4.0 mol% Nb2O5 were prepared by conventional solid stage sintering process, so as to investigate the effect of the amount of Nb2O5 on the dielectric properties and complex impedance patterns of barium titanates. From the measurement of capacitance, we found that the dielectric constant of BaTiO3 samples with 1 mol% or more Nb2O5 remained approximately constant around room temperature with values higher than 2500. In this paper, the effect of impurity content as well as temperature on complex impedance patterns was discussed in detail. In particular, the grain and grain boundary behavior of samples which showed PTCR characteristics was discussed in terms of measuring temperature.

• Journal of Radiation Protection and Research
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• v.34 no.2
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• pp.65-68
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• 2009

Metal-semiconductor contact is very important for the operating property of semiconductor detector. $Cd_{0.96}$ $Zn_{0.04}$ Te semiconductor crystal was grown with Bridgman method, and the crystal was cut and polished. EPMA (Electron Probe Micro Analyzer) and ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analysis were done to obtain the chemical composition and impurity of the crystal. Metal contact was deposited with thermal evaporator on both sides of the crystal. Detectors with Au/CZT/Au and In/CZT/Au structure were made, and I-V curve and the energy spectrum were measured with the detectors. It could be seen that the detector with the In/CZT/Au structure has superior property than the detector with Au/CZT/Au structure when the crystal resistivity was low. However, the metal contact structure effect becomes low when the crystal resistivity was high.

• Current Applied Physics
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• v.18 no.12
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• pp.1553-1557
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• 2018

Gallium nitride (GaN) nanoparticles are synthesized by the gallium particle trapping effect in a $N_2$ nonthermal plasma with metallic Ga vapor. A proposed method has an advantage of synthesized GaN nanoparticle purity because the gallium vapor from the inductively heated tungsten boat does not contain any impurity source. The synthesized particle size can be controlled by the amount of Ga vapor, which is adjusted using the plasma emission ratio of nitrogen to gallium, owing to the particle trapping effect. The synthesized nanoparticles are investigated by electron microscopy studies. High-resolution transmission electron microscopy (HRTEM) studies confirm that the synthesized GaN nanoparticles (10-40 nm) crystallize in a single-phase wurtzite structure. Room-temperature photoluminescence (PL) measurements indicate the band-edge emission of GaN at around 378 nm without yellow emission, which implies that the synthesized GaN nanoparticles have high crystallinity.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.1-11
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• 1999

The effect of aliovalent dopents, $Nb_3O_5$ and MnO, on the grain growth kinetics of 12 mol% ceria stabilized tetragonal zirconia polycrystals (Ce-TZP) was studied. All specimens were sintered at $1550^{\circ}C$ for 20 minutes prior to annealing at different temperatures to study grain growth kinetics. Grain growth kinetics of Ce-TZP and 1 mol% $Nb_2O_5$ doped Ce-TZP (Ce-TZP/$Nb_3O_5$) during annealing at 1475, 1550, and $1600^{\circ}C$ adequately matched with square law $(D^2-D_\;o^2=k_at)$. However, grain growth in 1 mol% MnO suppressed grain growth in Ce-TZP by drag force exerted by $Mn^{+2}$ ions which segregated strongly to the positively-charged grain boundaries of Ce-TZP, $Nb_2O_5$ enhanced grain growth by increasing the concentration of vacancies of $Zr^{+4}$ ion and $Ce^{+4}$ ions. Surface analysis with X-ray photoelectron spectroscopy (XPS) showed the segregation of Mn+2 ions to grain boundaries. The kinetics of grain growth obtained in the base Ce-TZP and the Ce-TZPs with the aliovalent dopants were examined in the context of impurity drag effect and space charge effect.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.2
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• pp.57-62
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• 2018

In this study, we investigated the impurity effect of $Ga_2O_3$ doped thin film by simple doping method using Mg acetate solution. Both undoped $Ga_2O_3$ thin films and Mg-doped $Ga_2O_3$ thin films were grown on Si substrates at 600 and $900^{\circ}C$ for 30 minutes by means of a customized MOCVD method. As a result of the surface analysis, there were no obvious morphological differences by Mg impurity implantation. The surface of the thin film grown at $900^{\circ}C$ was rougher than those grown at $600^{\circ}C$ and polycrystallization was achieved. As a result of the optical property analysis, in the case of the doped sample, the overall emission peak was red shifted and the UV radiation intensity was increased. As a result of the I-V curve, the leakage current of the $600^{\circ}C$ growth thin film decreased by the Mg impurity and the photocurrent of the growth thin film of $900^{\circ}C$ increased.

• Analytical Science and Technology
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• v.21 no.4
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• pp.332-337
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• 2008

Purification of silica mineral was compared with various leaching methods such as shaking, stirring, ultrasonic with 2.5% HF/HCl solution. Among them, ultrasonic method showed a best leaching effect. From the leaching experiment, Na, K, Fe, Al exist as the major impurity elements. The removal rate of Al, Fe showed little difference with various leaching methods but Ca, Mn, Na were very different. Four kinds of silica mineral (>99% purity) after physical purification treatment were used for ultrasonic leaching experiment. Among them IN-Si had a highest impurity removal rate. Ca, Cr, K, Zn were removed above 80% using ultrasonic leaching method and Fe was also removed above 60%. But Al showed 10~60% removal rate with different samples.

• Journal of Electrochemical Science and Technology
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• v.3 no.3
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• pp.123-134
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• 2012

The electrochemical performance of positive pole grids of lead-acid batteries made of Pb-0.08%Ca-1.1%Sn alloys without and with 0.1 wt% of each of Cu, As or Sb and with 0.1 wt% of Cu, As and Sb combined was investigated by electrochemical methods in 4.0 M $H_2SO_4$. The corrodibility of alloys under open-circuit conditions and constant current charging of the positive pole, the positive pole gassing and the self-discharge of the charged positive pole were studied. All impurities (Cu, As, Sb) were found to decrease the corrosion resistance, $R_{corr}$ after 1/2 hour corrosion, but after 24 hours an improvement in $R_{corr}$ was recorded for Sb containing alloy and the alloy with the three impurities combined. While an individual impurity was found to enhance oxygen evolution reaction, the impurities combined significantly inhibition this reaction and the related water loss problem was improved. Impedance results were found helpful in identification of the species involved in the charging/discharging and the self-discharge of the positive pole. Impurities individually or combined were found to increase the self-discharge during polarization (33-68%), where Sb containing alloy was the worst and impurities combined alloy was the least. The corrosion of the positive pole grid in the constant current charging was found to increase in the presence of impurities by 5-10%. Under open-circuit, the self-discharge of the charged positive grids was found to increase significantly (92-212%) in the presence of impurities, with Sb-containing alloy was the worst. The important result of the study is that the harmful effect of the studied impurities combined was not additive but sometimes lesser than any individual impurity.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.6-10
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• 2003

Silver nano-powder was added to Ma $B_2$ to make (Ag)$_{(x)wt.%}$(Mg $B_2$)$_{(l00-x)wt.%}$ (A $g_{x}$-Mg $B_2$) (10 $\leq$ x $\leq$ 50) composite superconductors to investigate the effect of the Ag nano-powder on the vortex pinning. Pellets made out of the mixed powder were put inside stainless steel tubes, which were sintered at 85$0^{\circ}C$ in Ar atmosphere. No impurity phase was identified for as-rolled samples. However, both the Mg $B_2$ and the A $g_{x}$-Mg $B_2$ composite pellets, when sintered, contain small amount of Mg $B_4$ and MgAg impurity phases. From the magnetization study, it was found that the flux pinning was improved in the high magnetic field region (> 3 T) only when 10w/o Ag was added to Mg $B_2$. The "two step" structures in ZFC M(T) curve gradually increased as the amount of Ag added increased. Pinning centers can be created by adding a suitable amount of Ag nano-powder which is not too large to increase the decoupling between the Mg $B_2$ grains.crease the decoupling between the Mg $B_2$ grains.