• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.14 no.2
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• pp.91-100
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• 2016

The neutron activation inventories in reactor vessel and its internals, and bio-shield of a PWR nuclear power plant were calculated to evaluate the effect of impurity elements contained in the structural materials on the activation inventory. Carbon steel is, in this work, used as the reactor vessel material, stainless steel as the reactor vessel internals, and ordinary concrete as the bio-shield. For stainless steel and carbon steel, one kind of impurity concentration was employed, and for ordinary concrete five kinds were employed in this study using MCNP5 and FISPACT for the calculation of neutron flux and activation inventory, respectively. As the results, specific activities for the cases with impurity elements were calculated to be more than twice than those for the cases without impurity elements in stainless and carbon steel. Especially, the specific activity for the concrete material with impurity elements was calculated to be 30 times higher than that without impurity. Neutron induced reactions and activation inventories in each material were also investigated, and it is noted that major radioactive nuclide in steel material is Co-60 from cobalt impurity element, and, in concrete material, Co-60 and Eu-152 from cobalt and europium impurity elements, respectively. The results of this study can be used for nuclear decommissioning plan during activation inventory assessment and regulation, and it is expected to be used as a reference in the design phase of nuclear power plant, considering the decommissioning of nuclear power plants or nuclear facilities.

• Nuclear Engineering and Technology
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• v.55 no.7
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• pp.2489-2497
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• 2023

Co and Eu impurities in the SSCs are nuclides that dominantly influence the neutron-induced radioactive inventory in metal and concrete radwastes (radioactive wastes) during NPP decommission. The impurity concentrations provided by NUREG/CR-3474 were used for the practical range of Co and Eu impurity concentrations to be applied to the code calculations. Metal structures near the core were evaluated to be ILW (intermediate-level waste) for the whole range of Co impurity concentration, so the boundary line between ILW and LLW (low-level waste) has no change for the whole concentration range provided by NUREG/CR-3474. Also, the boundary line between VLLW (very low-level waste) and CW (clearance waste) in the concrete shield could alter a little depending on the Eu impurity concentration within the range provided by NUREG/CR-3474. From this work, it is found that the concentration of material impurities of SSCs gives no critical impact on determining radwaste levels.

• Journal of Sensor Science and Technology
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• v.14 no.6
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• pp.369-373
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• 2005

High quality CdTe single crystal for the solar cell fabrication was grown by vertical Bridgman method. The etch pits patterns of (111) surfaces of CdTe etched by Nakagawa solution was observed the (111)A compesed of Cd atoms with typical triangle etch pits of pyramid mode. From the photoluminescence measurement on (111)A, we observed free exciton ($E_{x}$) existing only high quality crystal and neutal acceptor bound exciton ($A^{0}$,X) having very strong peak intensity. Then, the full width at half maximum and binding energy of neutral acceptor bound exciton were 7 meV and 5.9 meV, respectively. By Haynes rule, an activation enery of impurity was 59 meV. Therefore, the origins on impurity level acting as a neutral acceptor were associated Ag or Cu elements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.584-592
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• 2003

6H-SiC MOSFETs and digital ICs have been fabricated and characterized. PMOS devices are fabricated on an n-type epilayer while the NMOS devices are fabricated on implanted p-wells. NMOS and PMOS devices use a thermally grown gate oxide. SiC MOSFETs are fabricated using different impurity activation methods such as high temperature and newly proposed laser annealing methods. Several digital circuits, such as resistive road NMOS inverters, CMOS inverters, resistive road NMOS NANDs and NORs are fabricated and characterized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.381-381
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• 2010

From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa2Se4singlecrystalthinfilm, wehavefoundthatthevaluesofspinorbitsplitting$\Delta$soandthecrystalfieldsplitting$\Delta$crwere251. 9meVand 183.2me Vat 10K, respectively. FromthephotolwninescencemeasurementontheZnGa2Se4singlecrystalthinfilm,weobservedfreeexcition(EX)existingonlyhighqualitycrystalandneutralboundexiciton(A0,X)havingverystrongpeakintensity.Then,thefull-width-at-half-maximum(FWHM)andbindingenergyofueutralacceptorboundexcitionwerel1meVand24.4meV,respectivity.ByHaynesrule,an activation energy of impurity was 122 meV.

• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.81-86
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• 2014

The process parameter in optimized KOH alkali activation of soft carbon series coke material in high purity was set with DOE experiments design. The activated carbon was produced by performing the activation process based on the set process parameters. The specific surface area was measured and pore size was analyzed by $N_2$ absorption method for the produced activated carbon. The surface functional group was analyzed by Boehm method and metal impurities were analyzed by XRF method. The specific surface area was increased over 2,000 $m^2/g$ as the mixing ratio of activation agent increased. The micro pores in $5{\sim}15{\AA}$ and surface functional group under 0.4 meq/g were obtained. The contents of the metal impurity in activated carbon which is the factor for reducing the electrochemical characteristics was reduced less than 100 ppm through the cleansing process optimization. The electrochemical characteristics of activated carbon in 38.5 F/g and 26.6 F/cc were checked through the impedance measuring with cyclic voltammetry scan rate in 50~300 mV/s and frequency in 10 mHz ~100 kHz. The activated carbon was made in the optimized activation process conditions of activation time in 40 minutes, mixing ratio of activation agent in 4.5 : 1.0 and heat treatment temperature over $650^{\circ}C$.

• Nuclear Engineering and Technology
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• v.24 no.2
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• pp.163-167
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• 1992

Nondestructive neutron activation analysis of copper in high purity Aluminum samples which can be used as a parameter of impurity is investigated and determined. Other 23 trace impurity elements in the samples are also determined. In the analysis of copper, the new irradiation method using thermal column was applied to reduce the interfering activity of 24Na produced by 27Al(n,$\alpha$)24Na reaction induced by fast neutron. As a result, the interference can be reduced to 100 times more than other activation methods. Also the influence by activity of 24Na is found in the range of 2~3 %. It has been observed that the copper contents in so-ratted“six nine”class standard aluminum samples are about 0.54 $\pm$ 0.08 ppm. By the comparison with other values re-ported, our results are reasonable and can be available as a improved routine analysis.

• Analytical Science and Technology
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• v.17 no.4
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• pp.308-314
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• 2004

When the polymer was used for the guard raw materials of electronic device, the content of U, Th and their daughter nuclides were known as a factor of soft error. Because emitted alpha ray could be caused of mis-operation. And ionic impurities such as Cl, Fe, Na could shorten the device life-time. For the analysis of trace impurities in the polymer, neutron activation analysis(NAA) and ICP/AES have been studied. To improve the accuracy and sensitivity of the trace and ultratrace metallic impurities in the epoxy and phenol polymer, sample pretreatment method and optimum analytical condition of NAA were developed. Using the above method, U, Th and other 23 trace impurity elements were analyzed.

• Journal of Magnetics
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• v.19 no.2
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• pp.116-120
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• 2014

The spin-lattice relaxation time, $T_1$, for $^{69}Ga$, $^{71}Ga$, and $^{75}As$ nuclei in GaAs:$Mn^{2+}$ single crystals was measured as a function of temperature. The values of $T_1$ for $^{69}Ga$, $^{71}Ga$, and $^{75}As$ nuclei were found to decrease with increasing temperature. The $T_1$ values in GaAs:$Mn^{2+}$ crystal are similar to those in pure GaAs crystal. The calculated activation energies for the $^{69}Ga$, $^{71}Ga$, and $^{75}As$ nuclei are 4.34, 4.07, and 3.99 kJ/mol. It turns out that the paramagnetic impurity effect of $Mn^{2+}$ ion doped in GaAs single crystal was not strong on the spin-lattice relaxation time.

• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.1
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• pp.27-35
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• 1973

The electronic states of carrier capture centers in reverse biased point-contact germanium diodes have been investigated through the tomperature-and reverse voltage-characteristics of burst noise. The measured values of the time constants wllich represent the electronic states of the centers are extended up to greater than ten minutes, which are about 10,000 times greater than the ones obtained by other investigators. From the relation between these time constants and temperatures, the quasi-Peymi level and the activation energy of the center have been obtained.