• 전기의세계
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• v.27 no.6
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• pp.69-75
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• 1978

Diffusion processes of boron, phosphorus, and arsenic into silicon have been investigated using a new diffusion source called "spin-on source". Diffusion coefficients of these impurities have been calculated from the experimental results and are compared with the published values. Reasonable agreements have been found between the calculated and the published values. From this study, it is concluded that the spin-on source can be used as the diffusion source for integrated circuit fabricaticon.ricaticon.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.666-669
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• 1993

The space charge fields, including intermode apace charge fields in photorefractive material with two impurities are obtained for the small light intensity at large modulation depth, and their implication of high-capacity volume holographic interconnection are presented. In the following data regions the effect of intermode space charge fields are suppresed and the criteria for optimal implementation of volume holographic interconnections are satisfied.

• Bulletin of the Korean Chemical Society
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• v.19 no.6
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• pp.628-634
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• 1998

The properties of the n-type impurities nitrogen and phosphorus in diamond have been investigated by means of electronic band structure calculations within the framework of the semiempirical extended Huckel tight-binding method. For diamond with the nitrogen and phosphorus substitutional impurities, calculated density of states shows the impurity level deep in the band gap. This property can be derived from the substantial <111> relaxation of the impurity and nearest-neighbor carbon atoms, which is associated with the population of an antibonding orbital between them. The passivated donor property of the P-vacancy complex which lies deep in the gap is also discussed.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.267-274
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• 2001

Removal of Cr, Ni and Cu impurities on Si surfaces using remote plasma-excited hydrogen was investigated. Si surfaces were contaminated intentionally by acetone with low purity. To determine the optimum process condition, remote plasma-excited hydrogen cleaning was conducted for various rf-powers and plasma exposure times. After remote plasma-excited hydrogen cleaning, Si surfaces were analyzed by Total X-ray Reflection Fluorescence(TXRF), Surface Photovoltage(SPV) and Atomic Forece Microscope(AFM). The concentrations of Cr, Ni and Cu impurities were reduced and the minority carrier lifetime increased after remote plasma-excited hydrogen. Also RMS roughness decreased by more than 30% after remote plasma-excited hydrogen cleaning. AFM analysis results also show that remote plasma-excited hydrogen cleaning causes no damage to the Si surface. TXRF analysis results show that remote plasma-excited hydrogen cleaning is effective in eliminating metallic impurities from Si surface only if it is performed under an optimum process conditions. The removal mechanism of the Cr, Ni and Cu impurities using remote plasma-excited hydrogen treatments is proposed to be the lift-off during removal of underlying chemical oxides.

• Korean Journal of Environmental Agriculture
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• v.14 no.2
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• pp.171-178
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• 1995

The purpose of this study was to investigate the identification and the toxicological effects of some impurities present in the technical grade phosalone (94.4%). In instrumental analyses of the technical phosalone, the five impurities such as phosalone oxon, 6-chloro-3-methylthio-2-oxobenzoxazole, 6-chloro-2-oxobenzoxazole, O,O,S-triethyl phosphorodithioate (OOSTEPDT) and dichlorophosalone were identified. The bimolecular inhibition rate constants ($k_i$) indicated that the technical phosalone inhibited both AChE and BuChE about ten times faster than the purified phosalone did. From in vivo studies the technical phosalone showed greater inhibition for mouse brain AChE, rat blood ChE's and mouse cytosolic non-specific esterases. It was presumed that some impurities present in the technical phosalone such as phosalone oxon cause such inhibition patterns of the technical phosalone observed in this study.

• KEPCO Journal on Electric Power and Energy
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• v.3 no.1
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• pp.41-47
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• 2017

After $SF_6$, which is being used in power equipment as an insulating material, is classified as one of the 6 major greenhouse gases, the maintenance and the refinement of used $SF_6$ started to get attention. In regard to this, KEPCO Research Institute (KEPRI) is developing $SF_6$ recovery and refinement technology starting with establishing a comprehensive $SF_6$ analysis system. With the analysis system, qualitative and quantitative analyses of the purity and the impurities of $SF_6$ before and after recovery, and before and after refinement have been carried out. The analysis system is comprised of GC-DID (Gas Chromatograph -Discharge Ionization Detector) for trace impurities analysis, GC-TCD (Thermal Conductivity Detector) for analyses of $SF_6$ purity and major impurities concentration from several hundred ppm up to percent range, GC-MSD (Mass Selective Detector) for analyses of impurities not included in standard gas, FT-IR (Fourier Transform-Infrared) Spectrometer for analysis of HF and $SO_2$, and moisture analyzer for analysis of moisture below 100 ppm. With this analysis system, complete analysis method of $SF_6$ has been established. This analysis system is being used in the maintenance of power equipment and the development of $SF_6$ recovery and refinement technologies. In this paper, the analysis results of four samples - gas and liquid phase $SF_6$ samples from a $SF_6$ refinement system before and after refinement are presented.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.17 no.4
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• pp.429-435
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• 2019

Decontamination wastewater generated from the HyBRID decontamination process of the primary system in a nuclear power plant contains impurities such as sulfate ions, metal ions containing radioactive nuclides, and hydrazine (carcinogenic agent). For this reason, it is necessary to develop a technology to remove these impurities from the wastewater to a safe level. In this study, it has been conducted to remove the impurities using a decontamination wastewater surrogate, and a treatment process of the HyBRID decontamination wastewater has been established. The performance and applicability of the treatment process have been verified through 1 L scale of replicates and a pilot scale (300 L/batch) test.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.26-38
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• 2010

Degradation in Solid Oxide Fuel Cell performance can be ascribed to the following fundamental processes from the materials chemical point of view; that is, diffusion in solids and reaction with gaseous impurities. For SOFC materials, diffusion in solids is usually slow in operation temperatures $800\sim1000^{\circ}C$. Even at $800^{\circ}C$, however, a few processes are rapid enough to lead to some degradations; namely, Sr diffusion in doped ceria, cation diffusion in cathode materials, diffusion related with metal corrosion, and sintering of nickel anodes. For gaseous impurities, chromium containing vapors are important to know how the chemical stability of cathode materials is related with degradation of performance. For LSM as the most stable cathode among the perovskite-type cathodes, electrochemical reduction reaction of $CrO_3$(g) at the electrochemically active sites is crucial, whereas the rest of the cathodes have the $SrCrO_4$ formation at the point where cathodes meet with the gases, leading to rather complicated processes to the degradations, depending on the amount and distribution of reacted Cr component. These features can be easily generalized to other impurities in air or to the reaction of nickel anodes with gaseous impurities in anode atmosphere.

• Journal of the Korean Applied Science and Technology
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• v.30 no.1
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• pp.146-151
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• 2013

This paper reveals the performance decrease and recovery of PEMFC when the contaminated fuel gas and air source with sulfur impurities such as hydrogen sulfide and sulfur dioxide were simultaneously introduced to anode and cathode, respectively. Three different GDLs were fabricated with different carbon black and activated carbon to prevent an introduction of sulfur compound impurities into MEA. components. The severity of $SO_2$ and $H_2S$ poisoning was depended on concentrations(3 ppm - 10 ppm) of sulfur impurities. Especially, cell performance degradation rate was rapid when MEA fabricated with CN-2 GDL because it had little porosity on GDL surface. Moreover, the cell performance can be recovered up to 90%-95% only with neat hydrogen and fresh air feeding.. Conclusively, MEA fabricated with porous CN-1 GDL showed the best cell performance and recovery efficiency during exposure to poisoning condition by simultaneous sulfur impurities.

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.17-22
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• 1991

Tantalum thin films were deposited by DC sputtering on heavily doped single Si substrates. These substrates were treated by means of a rapid thermal annealing (RTA) under Ar atmosphere for various temperatures($600-1100^{\circ}C$). The silicide formation and the impurities behavior in the substrate are studied by means of XRD, SEM, four-point probe, HP4145, and SIMS. The formation of $TaSi_2$ started at $800^{\circ}C$ for all kinds of impurities and the entire Tantalum thin metal films were transformed into $TaSi_2$ above $1000^{\circ}C$ Also the contact resistance for $TaSi_2/P^+$ region had a low value; $22{\Omega}$, at contact site of $0.9{\times}0.9(\mu\textrm{m^2}$), and implanted impurities were diffused out into the $TaSi_2$ for rapid thermal annealing.