• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.117-117
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• 2012

부식용액 중의 붕산 농도 및 붕산 외 불순물(Cl, F, S)의 농도변화가 탄소강(SA106)의 부식특성에 미치는 영향을 조사하였다. 붕산농도 및 붕산 외 불순물(Cl, F, S)의 농도 변화가 탄소강의 부식특성에 많은 영향을 미쳤음을 관찰할 수 있었다.

• 보존과학연구
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• s.16
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• pp.18-40
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• 1995

Twelve bronze artifacts and silver earring from Kimhae Yangdong-ri Site were treated by B.T.A(Benzotriazole) for the stabilization of copper alloys and impregnated with Incralac for consolidation. Bronze artifacts were analyzed qualitatively by X-rayfluorescence. It was found that elemental composition of bronze artifacts were Cu-Sn-Pbsystem wint some impurities such as Bi, As, Fem Sb, and Ag.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.56-56
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• 2005

• Proceedings of the PSK Conference
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• 2003.04a
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• pp.280.1-280.1
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• 2003

The high-performance liquid chromatography method was performed for test method development of related compounds in pharmaceuticals. Using reverse-phase column and gradient elution of 1 ％ acetonitrile-acetonitrile: H20:triethylamine (70:30:0.5), lansoprazole, 2-hydroxybenzimidazole, 2-mercaptobenzimidazole, lansoprazole sulfone, lansoprazole sulfide could be individually identified and quantitated. (omitted)

• Nuclear Engineering and Technology
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• v.56 no.7
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• pp.2790-2798
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• 2024

In this research, thermoluminescent pellets were prepared by adding Mg, Cu, Na and Si impurities to lithium fluoride (LiF) crystal powder via melting and quenching methods to study dosimetric characteristics. Here, its reproducibility, dose response, dosimeter sensitivity, thermal and optical fading were investigated and the obtained results were compared with the properties of LiF: Cu, Mg, P crystal nominated as GR-200.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.09a
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• pp.233-241
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• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces strictly related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.09a
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• pp.211-219
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• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces stric시y related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials. In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.2
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• pp.808-816
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• 2012

This paper is the study for the directional solidification of the ingot through the thermal analysis simulation and structural change of casting furnace. With the results of thermal analysis simulation, the silicon as a whole has reached the melting temperature as the retention time 80 min. The best cooling conditions showed at the upper cooling temperature $1,400^{\circ}C$ and cooling time 60min. The fabricated wafers showed the superior etching result at the grain boundary than that of existing commercial wafers. The FTIR measurements of oxygen and carbon impurities were not in the critical value for solar conversion efficiency. The NAA analysis of metal impurities were also detected the total number of 18 different metals, but the concentration distribution showed no significant positional deviations in the same position from the top to the bottom.

• Korean Chemical Engineering Research
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• v.50 no.5
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• pp.759-765
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• 2012

As the biodiesel production is increasing rapidly, the crude glycerol, which is principal by-product of biodiesel production, has also been generated in a large amount. Many research studies on value-added utilization of glycerol are under investigation. 1,3-Propandiol is a promising chemical which can be produced from fermentation of glycerol because the application of 1,3-propanediol is mainly in the production of bio-PTT (Poly(trimethylene terephthalate). However, the cost of downstream processes in the biological production of 1,3-propanediol can make a high portion in the total production cost. This review summarizes the present state of separation processes in each step studied for the removal of impurities and the recovery of 1,3-propanediol from its fermentation broth. Furthermore, ATPE (Aqueous Two Phases Extraction) process is suggested as an attractive alternative for the primary separation process of 1,3-propanediol because ATPE is convenient for the simultaneous removal of microbial cells and impurities such as salts of organic acids and the separation of 1,3-propanediol from fermentation broth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.195-199
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• 2008

Production of the silicon feedstock for the semiconductor industry cannot meet the requirement for the solar cell industry because the production volume is too small and production cost is too high. This situation stimulates the solar cell industry to try the lower grade silicon feedstock like UMG (Upgraded Metallurgical Grade) silicon of 5$\sim$6 N in purity. However, this material contains around 1 ppma of dopant atoms like boron or phosphorous. Calculation of the composition profile of these impurities using segregation coefficient during crystal growth makes us expect the change of the type from p to n : boron rich area in the early solidified part and phosphorous rich area in the later solidified part of the silicon ingot. It was expected that the change of the growth speed during the silicon crystal growth is effective in controlling the amount of the metal impurities but not effective in reducing the amount of dopants.