• Journal of the Korean Chemical Society
• /
• v.12 no.2
• /
• pp.47-50
• /
• 1968

Two methods for separation of the impurities from bismuth metal have been found by the use of Dowex $1{\times}4,$ anion exchange resins. The first method is that Dowex $1{\times}4$ resins are packed into the two stage columns (height of under stage is 22cm and upper stage is 3cm, and diameter of columns are 1.5cm), and the impurities of Pb(II), Ag(I) and Cu(II) are separated by the eluent of 7.5M HCl soln, Zn(II), Fe(III) by 0.5M HCl solns, and Te(IV) in the upper stage by 2M NaOH soln. Remained Au(III) in the upper stage is determined by the ignition with resins. The 2nd method is that for the separation of all the impurities simultaneously the same resins are packed into single stage column(height is 10cm and diameter is 1.5cm), and all the impurities of Pb(II), Zn(II), Cu(II), Fe(III) and Ag(I) are eluted by the eluent of 0.5M HCl soln. Separated impurities are determined by the colorimetry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.6
• /
• pp.532-537
• /
• 2003

Crystallographic, electric, magnetic and heat transition properties of $\alpha$-Fe$_2$O$_3$ have been studied with a small addition of Eu impurities. Hematite($\alpha$-Fe$_2$O$_3$) is a basic ferromagnetic material having rhombohedral structure, which is similar to perovskites structure. Eu is a rare earth element that has an electric configuration of 4f$^{7}$ 6s$^2$. X-ray diffraction pattern of Fe$_{1-x}$ Eu$_{x}$O$_3$ (x = 0.00, 0.04, 0.06) shows an increament of a value when the amount of Eu impurities increased. The VSM data show an increment of magnetization by increasing the amount of Eu impurity. The one with x=0.06 shows the largest increment of magnetic remanence. The magnetic remanence varied from 0.49$\times$10$^{-3}$ emu/g to 0.62$\times$10$^{-3}$ emu/g when Eu impurity is increased by 2 %. Coercivity is decreased as Eu impurity is increased. Resistances is reduced significantly by Eu impurity. There is a clear difference in temperature-dependent resistance depending on the amount of Eu impurities. Especially, there are cusps between 150 K to 175 K. It indicates the change of electronic quantum states inside the atoms by rare earth impurities in rhombohedral structure. Temperature-dependent heat capacity shows that the most effective amount of Eu impurities is 6 %. %.

• Journal of the Korean institute of surface engineering
• /
• v.51 no.4
• /
• pp.191-196
• /
• 2018

The self-annealing which leads evolution of microstructure in copper electroplating layers at room temperature occurs after forming deposition layer. During the process, crystal orientation, size and sheet resistance of plating layer change. Lastly, it causes the change of physical and mechanical characteristics such as a tensile strength of plating layer. In this study, the variation of incorporated impurities, microstructure and sheet resistance of copper plating layer formed by electroplating are measured with and without inorganic additives during the self-annealing. In case of absence of inorganic additives, the copper layer presents strong total intensity of incorporated impurities. During the self-annealing, such width of reduction was significant. Moreover, microstructure and crystal size are increased while the tensile strength is decreased noticeably. On the other hand, in the presence of inorganic additives, there is no observable distinction in the copper plating layer. According to the observation on movements of the incorporated impurities in electrodeposition copper layer, within 12 hours the impurities are continuously shifted from inside of the plating layer to its surface after as-deposited electroplating. Within 24 hours, except for the small portion of surface layer, it is considered that most of the microstructure is transformed.

• Analytical Science and Technology
• /
• v.37 no.2
• /
• pp.98-113
• /
• 2024

The current investigation entails the characterization of five degradation products (DPs) formed under different stress conditions of loteprednol using liquid chromatography-tandem mass spectrometry (LC-MS/MS). In addition, this study developed a stable high-performance liquid chromatography (HPLC) method for evaluating loteprednol along with impurities. The method conditions were meticulously fine-tuned which involved the exploration of the appropriate solvent, pH, flow of the mobile phase, columns, and wavelength. The method conditions were carefully chosen to successfully resolve the impurities of loteprednol and were employed in subsequent validation procedures. The stability profile of loteprednol was exposed to stress degradation experiments conducted under five conditions, and DPs were structurally characterized by employing LC-MS/MS. The chromatographic resolution of loteprednol and its impurities along with DPs was effectively achieved using a Phenomenex Luna 250 mm C18 column using 0.1 % phosphoric acid, methanol, and acetonitrile in 45:25:30 (v/v) pumped isocratically at 0.8 mL/min with 243 nm wavelength. The method produces an accurate fit calibration curve in 50-300 ㎍/mL for loteprednol and LOQ (0.05 ㎍/mL) - 0.30 ㎍/mL for its impurities with acceptable precision, accuracy, and recovery. The stress-induced degradation study revealed the degradation of loteprednol under basic, acidic, and photolytic conditions, resulting in the formation of seven distinct DPs. The efficacy of this method was validated through LC-MS/MS, which allowed for the verification of the chemical structures of the newly generated DPs of loteprednol. This method was appropriate for assessing the impurities of loteprednol and can also be appropriate for structural and quantitative assessment of its degradation products.

• Resources Recycling
• /
• v.12 no.1
• /
• pp.55-64
• /
• 2003

Presently, the reuse of waste FCC catalysts, which generated from the refining process of crack oil, after the removal of con-taminated metallic impurities have not been attempted domestically yet because the separation technology f3r the impurities from waste catalysts has not been established. As a basic study far the reusable portion from the waste FCC catalysts and treatment of metallic impurities are assured, there will be invoked an significant contribution not only in the recycling of abandoned wastes up to date but also in the treatment efficiency of wastes and extraction of economical benefits from them. The magnetic separation of impurities such as Fe, Ni, and V, from waste FCC catalyst has been attempted with or without its pre-oxidation at high temperature for the purpose of its reuse. The results showed that the separability of impurities by magnetic force was high far non-preoxidized catalysts compared with preoxidized ones, and employment of screen-type matrix showed a higher separation efficiency than ball-type matrix. The separability increased with the strength of magnetic field, and the method of ball matrix has separation efficiency of maximum 51.10%. The amount of metallic impurities was in the decreasing order of V, Ni, and Fe depending upon ICP analysis.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2012.05a
• /
• pp.405-406
• /
• 2012

• Korean Journal of Materials Research
• /
• v.28 no.4
• /
• pp.247-253
• /
• 2018

We examined the characteristics of indium tin zinc oxide (ITZO) thin film transistors (TFTs) on polyimide (PI) substrates for next-generation flexible display application. In this study, the ITZO TFT was fabricated and analyzed with a SiOx/SiNx gate insulator deposited using plasma enhanced chemical vapor deposition (PECVD) below $350^{\circ}C$. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) results revealed that the oxygen vacancies and impurities such as H, OH and $H_2O$ increased at ITZO/gate insulator interface. Our study suggests that the hydrogen related impurities existing in the PI and gate insulator were diffused into the channel during the fabrication process. We demonstrate that these impurities and oxygen vacancies in the ITZO channel/gate insulator may cause degradation of the electrical characteristics and bias stability. Therefore, in order to realize high performance oxide TFTs for flexible displays, it is necessary to develop a buffer layer (e.g., $Al_2O_3$) that can sufficiently prevent the diffusion of impurities into the channel.

• Journal of Korea Foundry Society
• /
• v.15 no.3
• /
• pp.283-290
• /
• 1995

Molybdenum ingot of 50mm in diameter were obtained from sintered Mo bars by EB drip melting technique. Macroscopic observation of EB remelted ingot indicates that coarse and columnar grains grow in the direction parallel to ingot pulling direction. This can be explained by slow solidification (3mm/min), large temperature gradient and heat flow to this direction. The orientation of columnar structure was found to be <110>, <200> and <211> by the analysis of X-ray diffraction patterns. The contents of typical metallic impurities in Mo sintered bar are 1.2ppm Cr, 3ppm Fe, 44ppm Zr, 150ppm W. Most of metallic impurities were reduced below the order of ppm except zirconium and tungsten by the selective evaporation. In the removal of nonmetallic impurities, oxygen and carbon impurities were lowered from 120 to 6ppm and from 157 to 106ppm, respectively, after first melting. Although the purification effect was not significant with the number of remelting, Vickers hardness was reduced from 217 to 195 and 184 in sequence with increasing the number of remelting.

• YAKHAK HOEJI
• /
• v.42 no.6
• /
• pp.627-633
• /
• 1998

Impurity profiling analysis of methamphetamine seized in Korea was investigated for the evidential and intelligent purpose. Samples were extracted with ethylacetate which contai ns internal standard of dioctylsebacate under basic condition and extracts were analyzed by GC-FID. Ephedrine, chloroephedrine & 1,2-dimethyl-3-phenylaziridine were identified impurities in illicit methamphetamine by GC-MS. These impurities revealed that most of abused methamphetamine in Korea were synthesized from ephedrine as a starting material. For the classification of samples. firstly, 24 impurity peaks were selected after inspection of every peak in 50 samples as the specific markers of impurities. Secondly, corresponding peak retention time and area ratio to the internal standard were calculated and database was created with values of 24 peaks by in-house program. Finally, cluster analysis was attempted with the resultant profiles using the STAR plot, which was based on the Euclidian distance for evaluating similarity among samples. A total of 76 samples were divided into 8 different groups within 90% statistical similarity and inter-batch samples showed similar impurity patterns by this procedure. In conclusion, the analysis of impurities is a suitable index for estimation the common or different origin of methamphetamine sample.

• Nuclear Engineering and Technology
• /
• v.55 no.8
• /
• pp.2879-2888
• /
• 2023

In fusion environments, large scales of helium (He) atoms are produced by a radical transformation along with structural damage in structural materials, resulting in material swelling and degradation of physical properties. To understand its irradiation effects, this paper investigates the stability, electronic structure, energetics, charge density distribution, PDOS and TDOS, and diffusion processes of He impurities in 6HSiC materials. The formation energy indicates that a stable, favorable position for interstitial He is the HR site with the lowest energy of 2.40 eV. In terms of vacancy, the He atom initially prefers to substitute at pre-existing Si vacancy than C vacancy due to lower substitution energy. The minimum energy paths (MEPs) with migration energy barriers are also calculated for He impurity by interstitial and vacancy-mediated diffusion. Based on its calculated energy barriers, the most possible diffusion path includes the exchange of interstitial and vacancy sites with effective migration energies ranging from 0.101 eV to 1.0 eV. Our calculation provides a better understanding of the stabilization and diffusion behaviors of He impurities in 6H-SiC materials.