• JSTS:Journal of Semiconductor Technology and Science
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• 제6권1호
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• pp.10-15
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• 2006

Various sizes of erbium/platinum silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from $20{\mu}m$ to 10nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the minimization of trap density between silicide and silicon interface and the reduction of the underlap resistance are the key factors for the improvement of short channel characteristics. The manufactured 10 nm n-type SBMOSFET showed $550{\mu}A/um$ saturation current at $V_{GS}-V_T$ = $V_{DS}$ = 2V condition ($T_{ox}$ = 5nm) with excellent short channel characteristics, which is the highest current level compared with reported data.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2001년도 추계 학술대회논문집
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• pp.37-43
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• 2001

The methods of atmospheric boundary layer generation in test section were reviewed. To utilize conventional aerodynamic wind tunnels as atmospheric wind tunnels, boundary layer growth should be accelerated. To achieve this, improvement of boundary layer generation devices is required and it might be done by CFD. In this respect, CFD application cases in boundary generation devices were reviewed and potential areas were considered. Some cases are tried by Fluent 5 code.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.149-149
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• 2003

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.79.1-79.1
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• 2009

• Transactions on Electrical and Electronic Materials
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• 제17권3호
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• pp.134-138
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• 2016

The fullerene solar cells are becoming a feasible choice due to the advanced developments in donor materials and improved fabrication techniques of devices. Recently, sufficient optimization and improvements in the processing techniques like incorporation of solvent vapor annealing (SVA) with additives in solvents has become a major cause of prominent improvements in the performance of organic solar cell-based devices . On the other hand, the challenge of reduced open circuit voltage (V_oc) remains. This study presents an approach for significant performance improvement of overall device based on organic small molecular solar cells (SMSCs) by following a two step technique that comprises thermal annealing (TA) and SVA (abbreviated as SVA+TA). In case of exclusive use of SVA, reduction in V_oc can be eliminated in an effective way. The characteristics of charge carriers can be determined by the measurement of transient photo-voltage (TPV) and transient photo-current (TPC) that determines the scope for improvement in the performance of device by two step annealing. The recovery of reduced V_oc is linked with the necessary change in the dynamics of charge that lead to increased overall performance of device. Moreover, SVA and TA complement each other; therefore, two step annealing technique is an appropriate way to simultaneously improve the parameters such as V_oc, fill factor (FF), short circuit current density (J_sc) and PCE of small molecular solar cells.

• 한국건설관리학회:학술대회논문집
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• 한국건설관리학회 2004년도 제5회 정기학술발표대회 논문집
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• pp.437-441
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• 2004

선진국에서는 건설분쟁을 소송 외 분쟁해결방법(ADR)에 의한 해결이 보편화 되어 있다. 최근 우리나라에서도 공공건설공사에서의 계약상대자간의 클레임이 증가하는 추세이다. 그러나 현행 공공공사 도급계약의 분쟁해결 조항은 분쟁 해결절차가 명시되지 않아 적시의 클레임 제기에 어려움이 있고, 소송과 중재를 동시에 규정한 선택적 중재조항으로 되어있어 중재에 의한 분쟁해결의 걸림돌이 되고 있다. 이에 국내외의 분쟁해결제도 및 절차를 검토하고 판례를 연구하여 선택적 중재조항에 대한 해설방법을 고찰하여 공사계약일반조건 분쟁해결조항의 개선방안을 제시하고자 한다.

• 한국전기전자재료학회논문지
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• 제22권4호
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• pp.327-332
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• 2009

In the devices structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) /tris (8-hydroxyquinoline)aluminum$(Alq_3)$electron-transport-layer(ETL)(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP))/Al, we have studied the efficiency improvement of organic light-emitting diodes depending on the thickness variation of BCP using electron transport layer. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm under a base pressure of $5{\times}10^{-6}$ Torr using at thermal evaporation, respectively. The TPD and $Alq_3$ layer were evaporated to be deposition rate of $2.5{\AA}/s$. And the BCP was evaporated to be a4 a deposition of $1.0{\AA}/s$. As the experimental results, we found that the luminous efficiency and the external quantum efficiency of the device is superior to others when thickness of BCP is 5 nm. Also, operating voltage is lowest. Compared to the ones from the devices without BCP layer, the luminous efficiency and the external quantum efficiency were improved by a factor of four hundred ninty and five hundred, respectively. And operating voltage is reduced to about 2 V.

• 한국의류산업학회지
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• 제23권5호
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• pp.655-666
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• 2021

This study aims to classify wearable devices for infants and children according to their function, and to analyze the types and attachment methods of the devices by function, operating system, characteristics of materials, and types of batteries, and to identify the points for improvement. Forty-eight types of devices investigated through previous studies and keyword research online were analyzed. Wearable devices for infants and children were classified according to their functions into wearable monitors, wearable thermometers, GPS trackers, and smart watches. Devices had different shapes and attachment methods according to their functions, and were mainly clothes or accessory types. The accessory type devices were attached to the body using velcro, clips, bands, or adhesives. Wearable monitors and thermometers mainly used Bluetooth to transmit data wirelessly, and location trackers used various combinations of 4G(LTE), 5G networks, GPS, Wi-Fi, and Bluetooth. Smartwatches had different functions depending on whether smart phones were linked to them or not. Wearable monitors and thermometers mainly used by infants provided material information, but other devices did not. These devices used rechargeable, replaceable, non-rechargeable or non-replaceable batteries. Wearable devices need to be improved to reduce the discomfort experienced by infants and children due to the attachment position, malfunction, skin trouble caused by materials, short time of use of batteries, version conflict and complexity with the device when linking with a smart phone, and non-operation when using Bluetooth.

• 한국산학기술학회논문지
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• 제19권7호
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• pp.252-257
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• 2018

본 논문에서는 군용 냉각형 열상장비의 중요한 부품인 냉각기의 MTTF를 개선하기 위한 방법을 제시한다. 일반적인 전자장비는 전자소자의 특성으로 인해 온도, 습도 등 환경요인에 의해 고장발생 가능성이 높다. 그러나 일부 군용과 같이 특수목적용의 장비(열상장비 등)들은 다양한 환경요인들에 노출되어 운용하기 때문에 환경요인을 극복할 수 있도록 설계한다. 다양한 군용 장비 중 지속적으로 사용가능 해야 하는 장비 중 가장 널리 사용되는 장비로 열상장비를 꼽을 수 있다. 특히 화질을 우선시하는 군용의 특성상 냉각형 열상장비를 많이 사용한다. 이러한 군용 냉각형 열상장비는 항시 운용 가능해야 하기 때문에 MTTF는 장비의 중요한 파라미터다. 군용 냉각형 열상장비의 MTTF에 가장 중요한 영향을 미치는 부분은 냉각기 부분이다. 냉각기의 MTTF는 장비 내부 열과 연관이 있으며 열을 저하시켜 MTTF를 증가시킬 수 있다. 이를 위해 기존 장비의 내부열에 대한 시뮬레이션을 수행하였고 이로부터 개선점을 확인할 수 있었으며 내부 구조를 개선하는 방법을 제안하였다. 제안한 개선방법의 효과는 시뮬레이션 및 MTTF계산을 통해 확인한다.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.