• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.152-152
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• 2010

이종접합 태양전지에서 Intrinsic a-Si:H의 역할은 상당히 중요하다. Passivation 효과와 높은 Voc에 이르는 핵심적인 Layer이다. 본 연구는 Intrinsic a-Si:H Layer의 증착조건을 가변하여 최적의 Passivation 효과를 얻는데 목적이 있다. 웨이퍼는 n-Type $500\;{\mu}m$두께에를 사용하였다. Intrinsic a-Si:H Layer는 $SiH_4$ 가스와 $H_2$ 가스를 혼합하여 증착하게 되는데 혼합비는 1:5로 고정하였다. 증착두께는 이종접합 태양전지에서 필요한 5nm로 고정하였으며 증착장비는 PECVD를 이용하였다. PECVD는 VHF(60MHz)를 이용하였고 증착온도는 $200^{\circ}C$로 고정하여 진행하였다. 가변내용은 전극거리와 파워, 압력이다. 전극거리는 20mm에서 80mm까지 가변하였고 압력은 100mTorr에서 500mTorr까지 가변하였다. 파워는 플라즈마의 방정특성을 알아본 후 최소파워를 이용하여 증착하였다. 이는 증착 시 플라즈마에 의한 박막 손상을 최소화하기 위함이다. 측정은 QSSPC 방식으로 Carrier Lifetime과 Implied Voc를 측정하였으며 두께는 Ellipsometry를 이용하여 측정하였다. 전극거리 60mm에서 증착압력은 400mTorr이고 파워는 $14mW/cm^2$에서 가장 높은 Carrier Lifetime 과 Implied Voc를 나타내었다. Carrier Lifetime은 2.2ms이고 Implied Voc는 709mV를 달성 하였다. Carrier Lifetime이 높으면 Surface Recombination이 낮다는 의미이며 이는 고효율 이종접합 태양전지 제작에 있어서 직렬저항을 줄일 수 있는 필수적인 요소이다. Implied Voc는 이종접합 태양전지의 Voc에 직결된 인자로 이종접합 태양전지의 Voc를 예상할 수 있는 중요한 요소이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.308-309
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• 2016

Reducing surface recombination is a critical factor for high efficiency silicon solar cells. The passivation process is for reducing dangling bonds which are carrier. Tunnel oxide layer is one of main issues to achieve a good passivation between silicon wafer and emitter layer. Many research use wet-chemical oxidation or thermally grown which the highest conversion efficiencies have been reported so far. In this study, we deposit ultra-thin tunnel oxide layer by PECVD (Plasma Enhanced Chemical Vapor Deposition) using $N_2O$ plasma. Both side deposit tunnel oxide layer in different RF-power and phosphorus doped a-Si:H layer. After deposit, samples are annealed at $850^{\circ}C$ for 1 hour in $N_2$ gas atmosphere. After annealing, samples are measured lifetime and implied Voc (iVoc) by QSSPC (Quasi-Steady-State Photo Conductance). After measure, samples are annealed at $400^{\circ}C$ for 30 minute in $Ar/H_2$ gas atmosphere and then measure again lifetime and implied VOC. The lifetime is increase after all process also implied VOC. The highest results are lifetime $762{\mu}s$, implied Voc 733 mV at RF-power 200 W. The results of C-V measurement shows that Dit is increase when RF-power increase. Using this optimized tunnel oxide layer is attributed to increase iVoc. As a consequence, the cell efficiency is increased such as tunnel mechanism based solar cell application.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.304.1-304.1
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• 2016

We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.93.1-93.1
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• 2010

반사방지막은 태양전지 표면에서의 광 반사를 낮춰주며, Si wafer 표면에서의 carrier의 재결합을 줄이는 passivation 역할을 한다. 이를 위한 다양한 물질이 반사방지막으로 사용된다. 단일박막은 passivation 효과가 미미하여 최근 passivation 향상에 도움이 되는 이중구조 반사방지막이 널리 연구되어지고 있다. 하지만 물질이 다양해짐에 따라 공정시간 및 비용이 늘어나고, passivation에 최적화된 물질사용이 필수적으로 요구되는 단점이 있다. 따라서 본 연구에서는 기존에 passivation 효과가 뛰어나다고 알려진 SiNx의 굴절률 가변을 통하여 이중구조를 갖는 박막을 반사방지막으로 이용하여 그 특성을 비교, 분석하였다. SiNx 이중반사방지막은 0.8 Torr~1 Torr의 압력에서 $450^{\circ}C$의 기판온도로 PECVD를 이용하여 증착되었으며 이때의 plasma power는 180mW/$cm^2$으로 고정 하였다. 굴절률 1.9 및 2.3을 갖는 가스 조성비를 이용하여 각 layer의 두께를 20/60nm, 30/50nm, 40/40nm로 가변하였다. 샘플 제작 후 Sun-Voc 측정을 통하여 implied Voc 및 효율을 측정하였다. 단일반사방지막을 사용한 샘플의 경우 608mV의 implied Voc가 측정되었으며, FF는 82.8%, 효율은 17.6%로 측정되었다. 가장 우수한 특성을 나타낸 20/60nm의 두께로 증착된 샘플의 경우 implied Voc는 625mV, FF는 84.1%, 효율은 18.3%로 우수한 결과를 나타내었다. 반사도 측정 결과 단일반사방지막은 2.27%로 높았으나 SiNx 이중구조를 이용한 반사방지막은 1.67%로 낮은 값을 확인 하여 이중구조의 반사방지막이 반사도 저감 및 passivation 효과 향상에 도움이 되는 것을 확인할 수 있었다.

• 한국대기환경학회지
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• 제22권6호
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• pp.758-766
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• 2006

A two-stage bioreactor, which consists of a biotrickling filter module and a biofilter module in series, was investigated for the enhanced treatment of a VOC mixture, toluene and methyl ethyl ketone (MEK). Throughout the experiments, the overall inlet loading rate was maintained at approximately $43g/m^3/hr$, but the inlet ratios of the VOCs were modified. The experimental results showed that the different ratios of the VOC mixture resulted in changes of overall removal efficiencies, elimination capacities (ECs) and microbial accumulation on the surface of each packing material. The ratio of inlet toluene to MEK at 50 : 150 was found to be most effective in terms of the overall removal efficiency, because, at this condition, MEK (i.e., the hydrophilic compound) was mostly removed in the biotrickling filter module and the following biofilter module was used to remove toluene. It was also found that when the inlet loading rate of the VOC mixture was serially increased stepwise within short-term periods, the ECs for toluene dropped significantly but the ECs for MEK increased at the ratio of the VOC mixture. These results implied that substrate interaction and/or substrate preferable utilization might have an effect on the biological removal of each compound in the two-stage bioreactor; therefore, the bioreactor should be operated in the condition where the substrate interaction could be minimized in order to maximize overall performance of the two-stage bioreactor.

• Asian Journal of Atmospheric Environment
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• 제4권2호
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• pp.63-71
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• 2010

The removal characteristics for aromatic and aliphatic VOCs by electron beam (EB) were discussed in terms of several removal variables such as initial VOC concentration, absorbed dose, background gas, moisture content, reactor material and inlet temperature. It was reviewed that only reactor material was an independent variable among the potential control factors concerned. It was also suggested that main mechanism by EB should be radical reaction for the VOC removal rather than that by primary electrons. It was discussed that the removal efficiency of benzene was lower than that of hexane due to a closed benzene ring. In the case of aromatic VOCs, it was observed that the decomposition of the VOCs with more functional groups attached on the benzene ring was much easier than those with less ones. As for aliphatic VOCs, it was also implied that the longer carbon chain was, the higher the removal efficiency became. An EB-catalyst hybrid system was discussed as an alternative way to remove VOCs more effectively than EB-only system due to much less by-products. This hybrid included supporting materials such as cordierite, Y-zeolite, and $\gamma$-alumina.

• 한국환경과학회지
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• 제16권4호
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• pp.415-423
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• 2007

This study assessed the characteristic of BTEX (Benzene, Toluene, Ethylbenzene, Xylene) concentration ratios of industrial emission sources and the neighborhoods of industrial area, fuel such as gasoline, light oil, LPG, and similar gasoline, and ambient air in Daegu. The BTEX in aromatic compounds was the most abundant VOC in Daegu. The BTEX ratios were (0.2:2.6:1.0:1.8) for the neighborhoods of industrial area, (2.6:11.3:1.0:1.2) for residential area, (2.2:11.0:1.0:1.6) for commercial area, (1.0:14.9:1.0:1.3) for industrial area, and (0.2:2.6:1.0:1.8) for the neighborhoods of industrial area. Average BTEX ratios in Daegu were B/T ratio (0.1), B/EB ratio (1.5), B/X ratio (1.1), T/EB ratio (12.6), T/X ratio (10), EB/X ratio (0.7), Expecially, B/T ratio in Daegu was similar as the other cities, Bangkok, Manila, and Hongkong. Comparing other cities with B/T ratio, the main sources of VOC were vehicular exhaust and emission of industrial facilities. Furthermore, BTEX correlation were evaluated at the emission sources and regional areas. Results showed that correlation coefficient values of emission sources, fuels and neighborhood of industry were significant magnitude above 0.65(p<0.01). Also, there showed highly significant correlations among BTEX. Calculated correlation coefficients of ambient air sampling sites were $0.61{\sim}0.954$ for commercial /residential area and $0.613{\sim}0.998$ for industrial area. However, they showed different correlation between commercial/residental area and industrial area. It implied that the emission sources were different from each area.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.59.1-59.1
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• 2010

이종접합 구조의 태양전지는 에미터 및 후면전계층으로 비정질 실리콘이 이용되고 있다. 본연구에서는 HWCVD를 이용하여 중성층 비정질 실리콘을 증착(10nm), 패시베이션된 n형 결정질 실리콘을 기판으로 PECVD법으로 에미터 층은 p형 비정질 실리콘을 후면 전계층은 n+형 비정질 실리콘을 증착하여 a-Si:H(p)/c-Si(n)/a-Si:H(n+)의 구조로 에미터 및 후면전계층의 조건에 따른 이종접합 태양전지를 제작, 특성을 분석하였다. 증착시간에 따라 에미터와 후면전계층의 두께를 조절하고 도펀트 가스(B2H6,PH3)의 유량에 따라 도핑 농도를 조절하였다. 공정 변수마다 MCLT 및 Implied Voc를 측정하였고, 태양전지 제작 후 도핑 농도에 따른 충진율을 비교, 분석하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.341-344
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• 2018

In order to achieve a high efficiency for the silicon solar cell, a passivation characteristic that minimizes the electrical loss at a silicon interface is required. In this paper, we evaluated the applicability of the oxide film formed by ozone for the tunnel silicon oxide film. To this end, we fabricated the silicon oxide film by changing the condition of ozone oxidation and compared the characteristics with the oxide film formed by the existing nitric acid solution. The ozone oxidation was formed in the temperature range of $300{\sim}500^{\circ}C$ at an ozone concentration of 17.5 wt%, and the passivation characteristics were compared. Compared to the silicon oxide film formed by nitric acid oxidation, implied open circuit voltage (iVoc) was improved by ~20 mV in the ozone oxidation and the ozone oxidation after the nitric acid pretreatment was improved by ~30 mV.