• Maxillofacial Plastic and Reconstructive Surgery
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• v.28 no.1
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• pp.58-67
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• 2006

In the recent studies, many authors have reported that the success rate of immediate implantation has no difference compared to conventional staged implantation. Although the immediate implantation has many advantages over conventional approach, many clinicians don't seem to practice because they think that most of the extraction sockets will have some bony gab with defects around implant and that this situation makes the result of immediate implantation unpredictable. We clinically analyzed 23 implanted sites of 18 patients treated with immediate implantation in our hospital from September 2003 to January 2004. The $ITI^{(R)}$. dental implant system was used and GBR procedure with $Bio-Oss^{(R)}$. and $Bio-Gide^{(R)}$. was done simultaneously. The pre & post-op. measurements were recorded such as alveolar crest-adjacent tooth CEJ distance, gingival crest-adjacent tooth CEJ distance, existence of periapical lesion, vertical defect around the extraction socket, horizontal defect around the extraction socket, probing depth, radiologic change of alveolar crest height. We report a positive outcome about immediate implantation with review of literatures.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.10-15
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• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

• Archives of Reconstructive Microsurgery
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• v.11 no.2
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• pp.125-134
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• 2002

This study was designed to investigate the process of re- or neo-vascularization in the prefabricated cutaneous flap using a skeletonized arteriovenous pedicle implantation. Fourty-eight flaps were divided into six groups of eight flaps, including control group of the conventional epigastric flap. In experimental groups, skin flap was fabricated by subcutaneous implantation of a distally ligated saphenous arteriovenous pedicle in left abdomen. At 2, 4, 6, 8, and 10 weeks after, prefabricated flap was elevated as an island flap based on implanted pedicle and sutured back in place. Three days after flap repositioning, the area of flap viability was quantified, the pattern of flap vascularization was evaluated with microangiography, and the quantification of vessels was assessed histologically. There were statistically significant differences in flap viability between group 2, 3, 4, and the control (p<0.05), with increased survival area in order. But Group 5 and 6 showed higher flap viability as much as the control did. In the microangiographis study, numerous small meander vessels were newly developed in the vicinity of the implanted pedicle just only 2 weeks after pedicle implantation, but neovascularization around the tip of implanted pedicle, and its anastomosis with native vasculatures was more important for overall flap survival, which was usually developed at least 4 weeks after pedicle implantation. Histologically, vessels are evenly spread over all layers of the flap at 6 weeks after pedicle implantation. The quantification of vessels was correlated well with the improvement of flap viability (p<0.05). In conclusion, neo- and re-vascularization around the tip of implanted pedicle was an important factor for overall survival of the prefabricated flap. Therefore, skeletonized pure vascular pedicle transfer, even though it used alone without surrounding was sufficient to get higher flap viability. The optimal duration of pedicle implantation was8 weeks to obtain maximal survival.

• Clinical and Experimental Reproductive Medicine
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• v.49 no.4
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• pp.248-258
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• 2022

Objective: This research investigated the effects of human chorionic gonadotropin (HCG)-producing peripheral blood mononuclear cells (PBMCs) on the implantation rate and embryo attachment in mice. Methods: In this experimental study, a DNA fragment of the HCG gene was cloned into an expression vector, which was transfected into PBMCs. The concentration of the produced HCG was measured using enzyme-linked immunosorbent assay. Embryo attachment was investigated on the co-cultured endometrial cells and PBMCs in vitro. As an in vivo experiment, intrauterine administration of PBMCs was done in plaque-positive female mice. Studied mice were distributed into five groups: control, embryo implantation dysfunction (EID), EID with produced HCG, EID with PBMCs, and EID with HCG-producing PBMCs. Uterine horns were excised to characterize the number of implantation sites and pregnancy rate on day 7.5 post-coitum. During an implantation window, the mRNA expression of genes was evaluated using real-time polymerase chain reaction. Results: DNA fragments were cloned between the BamHI and EcoRI sites in the vector. About 465 pg/mL of HCG was produced in the transfected PBMCs. The attachment rate, pregnancy rate, and the number of implantation sites were substantially higher in the HCG-producing PBMCs group than in the other groups. Significantly elevated expression of the target genes was observed in the EID with HCG-producing PBMCs group. Conclusion: Alterations in gene expression following the intrauterine injection of HCG-producing PBMCs, could be considered a possible cause of increased embryo attachment rate, pregnancy rate, and the number of implantation sites.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.188-191
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• 2012

This paper introduces a new method regarding deuterium incorporation in the gate dielectric including deuterium implantation and post-annealing at the back-end-of-the process line. The control device and the deuterium furnace-annealed device were also prepared for comparison with the implanted device. It was observed that deuterium implantation at a light dose of $1{\times}10^{12}-1{\times}10^{14}/cm^2$ at 30 keV reduced hot-carrier injection (HCI) degradation and negative bias temperature instability (NBTI) within our device structure due to the reduction in oxide charge and interface trap. Deuterium implantation provides a possible solution to enhance the bulk and interface reliabilities of the gate oxide under the electrical stress.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.254-259
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• 2004

The research on surface modification technology has been advanced to change the properties of engineering material. Ion implantation is a novel surface modification technology to enhance the mechanical, chemical and electronic properties of mechanical parts. In this research, nitrogen ions are implanted into aluminum for mold to improve endurance and life span. To analyze modification of surface properties, micro hardness, friction coefficient, wear resistance, contact angle, and surface roughness were measured. Hardness of ion implanted specimens was higher than untreated specimen and friction coefficient was also improved. In this experiment, it can be expected that nitrogen ion implantation can contribute to enhance the mechanical properties of material and ion implantation technology may also be applied to other materials.

• Journal of Veterinary Clinics
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• v.18 no.2
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• pp.156-159
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• 2001

A 6-year-old male mongrel dog with a 7-month history of ulnar-radial nonunion fracture was treated with implantation of recombinant human bone morphogenetic protein-2 (rhBMP-2). The dog had received surgical correction three times prior to the admission but radiography of the affected limb revealed a typical figure of nonunion fracture. Glossly, the fractured ends were sclerotic and the area between the ends was filled with fibrous tissue. After debridement the shaft was fixed by an 10-hole plate. rhBMP-2 at a total dose of 256 micrograms was implanted with a synthetic carrier into the 10-mm defect formed by the debridement. Callus formation responding to rhBMP-2 was radiographically observed at 4 weeks after implantation and the defect bridged both fracture ends by 8 weeks after implantation. The plate was removed at 12 months after implantation. Any complications were not observed for 5 months after removal of the plate.

• Proceedings of the Korean Society of Developmental Biology Conference
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• 2001.08a
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• pp.23-25
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• 2001

1. Leptin itself was not expressed in mouse uterine tissues. 2. Leptin receptors were not expressed in nonpregnant and little expressed in 3.5 day of pregnant uterine tissues. However, there was a signal in 4.5 and 5.5 day of tissues. 3. The expression level of leptin receptor variants in the implantation sites at around the time of initial embryo attachment (day 4.5 of pregnancy) and during the actual implantation period (day 5.5 of pregnancy) was much lower than that in the interimplantation 4. Finding of the differential expression of leptin receptors in implantation sites compared to interimplantation sites suggests that leptin - leptin receptor system may be one of the delicate regulators in the molecular mechanism of the implantation process.

• Journal of Mechanical Science and Technology
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• v.20 no.10
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• pp.1670-1679
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• 2006

The development of the oxidation, wear and corrosion resistant materials that could be used in severe environmental conditions is needed. The elementary technologies for surface modification include ion implantation and/or thin film coating. Furthermore, in order to develop ion implantation technique to the specimens with three-dimensional shapes, plasma-based ion implantation (PBII) techniques were investigated. As a result, it was found that the ion implantation and/or thin film coating used in this study were/was effective for improving the properties of materials, which include implantations of various kinds of ions into TiAl alloy, TiN films formed on surface of base material and coatings in high-temperature steam. The techniques proposed in this study provide useful information for all of the material systems required to use at elevated temperature. For the practical applications, several results will be presented along with laboratory test results.

• Journal of information and communication convergence engineering
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• v.1 no.2
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• pp.67-69
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• 2003

The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.