• 제목/요약/키워드: Impedance frequency characteristics

검색결과 646건 처리시간 0.029초

광대역 접지임피던스 측정기의 설계 및 제작 (Design and Fabrication of a Wideband Ground Impedance Meter)

  • 길경석;박대원;장운용;한주섭;길형준
    • 한국전기전자재료학회논문지
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    • 제23권10호
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    • pp.793-797
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    • 2010
  • The basic performance of the ground system is evaluated as the ground resistance by applying low frequency current below 1 kHz. However, characteristics of the ground system should be analyzed by high frequency current up to 1 MHz since transient currents having a few hundred kHz component flow during a line-to-ground fault and/or a lightning strike. This paper deals with the design and fabrication of a wideband ground impedance meter (WGIM) which measures the impedance of ground systems in ranges from 65 Hz to 1.28 MHz. Also, a noise elimination algorithm using a digital bandpass filter is proposed. The maximum error of the WGIM is 4.91% in the measurement frequency range.

Study on Characteristics of Various RF Transmission Line Structures on PES Substrate for Application to Flexible MMIC

  • Yun, Young;Kim, Hong Seung;Jang, Nakwon
    • ETRI Journal
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    • 제36권1호
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    • pp.106-115
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    • 2014
  • In this work, the coplanar waveguide is fabricated on a PES (poly[ether sulfone]) substrate for application to a flexible monolithic microwave integrated circuit, and its RF characteristics were thoroughly investigated. The quality factor of the coplanar waveguide on PES is 40.3 at a resonance frequency of 46.7 GHz. A fishbone-type transmission line (FTTL) structure is also fabricated on the PES substrate, and its RF characteristics are investigated. The wavelength of the FTTL on PES is 5.11 mm at 20 GHz, which is 55% of the conventional coplanar waveguide on PES. Using the FTTL, an impedance transformer is fabricated on PES. The size of the impedance transformer is $0.318mm{\times}0.318mm$, which is 69.2% of the size of the transformer fabricated by the conventional coplanar waveguide on PES. The impedance transformer showed return loss values better than -12.9 dB from 5 GHz to 50 GHz and an insertion loss better than -1.13 dB in the same frequency range.

접지임피던스에 대한 접지봉 크기의 영향 분석 (The Analysis for the grounding impedance influenced by the ground rod's dimension)

  • 이복희;조정현;신희경;이강수;황등과;김정철
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2008년도 추계학술대회 논문집
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    • pp.333-336
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    • 2008
  • This paper resents a theoretical analysis for the grounding impedance influenced by the ground rod's dimension using the distributed parameter model. In this paper, EMTP and Matlab Program were used to simulate the distributed parameter model and to analyze the frequency-dependent characteristics of the ground rods. We compared two kinds of ground rods having different dimensions and the frequency-dependent characteristics of two ground rods were quite different from each other. It is estimated that these different characteristics are caused by the distributed parmeters which are changed by the length of ground rod.

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감습특성이 우수한 금속산화물계 습도센서 연구 (A Study on Metal Oxide based Humidity Sensor with Excellent Humidity Sensing Characteristics)

  • 유도현
    • 전기학회논문지
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    • 제58권10호
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    • pp.1982-1988
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    • 2009
  • $TiO_2$ films are fabricated using silk printing method. Heat treatment temperature of films is 600[$^{\circ}C$]. From the analysis of microstructure, grain size of $TiO_2$ films is about $0.2{\sim}0.3[{\mu}m]$. Thickness of films is 30.19[${\mu}m$] and surface uniformity of films is good. From the analysis of crystalline structure, $TiO_2$ films transform anatase phase to rutile phase. Capacitance of films increases according to increase relative humidity and decrease measuring frequency. Hysteresis characteristics of capacitance and impedance are best at 45[%RH] and 75[%RH] respectively. Impedance of films increases according to decrease measuring frequency.

Design of Low-Pass Type Inverter: UWB Band-Pass Filter with Low Spurious Characteristics

  • Cho, Young-Ho;Choi, Moon-Gyu;Yun, Sang-Won
    • Journal of electromagnetic engineering and science
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    • 제11권2호
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    • pp.83-90
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    • 2011
  • In this paper, we present the design method for a low-pass type inverter, which can effectively suppress the spurious response associated with band-pass filters. The inverter has a length of ${\lambda}/4$ and employs not only a stepped-impedance configuration but also asymmetrical and bending structures in order to improve frequency selectivity and compactness. The inverter is applied as an impedance/admittance inverter to the ultra-wideband (UWB) band-pass filter. The UWB band-pass filter configuration is based on a stub band-pass filter consisting of quarter-wavelength impedance inverters and shunt short-circuited stubs ${\lambda}/4$ in length. The asymmetrical stepped-impedance low-pass type inverter improves not only the spurious responses, but also the return loss characteristics associated with a UWB band-pass filter, while a compact size is maintained. The UWB band-pass filter using the proposed inverters is fabricated and tested. The measured results show excellent attenuation characteristics at out-band frequencies, which exceed 18 dB up to 39 GHz. The insertion loss within the pass-band (from 3.1 to 10.6 GHz) is below 1.7 dB, the return loss is below 10 dB, and the group delay is below 1 ns.

Microstrip Bandpass Filter Using Stepped-Impedance Coupled-Line Hairpin Resonators with Enhanced Stopband Performance

  • Lee, Hye-Min;Ha, Jung-Hyun;Wang, Xu-Guang;Cho, Young-Ho;Yun, Sang-Won
    • Journal of electromagnetic engineering and science
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    • 제11권2호
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    • pp.91-96
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    • 2011
  • In this paper, we propose a microstrip bandpass filter using stepped-impedance coupled-line hairpin resonators. The stepped-impedance coupled-line hairpin resonator has extended harmonic suppression in comparison with a conventional hairpin resonator due to transmission zero and the movement of harmonic frequencies resulting from the stepped-impedance characteristic. A high-pass type impedance/admittance inverter is employed in order to improve the lower frequency skirt characteristics of the passband. A 4-pole bandpass filter is designed and fabricated at 1.8 GHz. The measured results show the excellent attenuation performance at the stopband which is greater than 30 dB up to 10 GHz.

Development of an Impedance Matching Layer in an Ultrasound Transducer with Gradient Properties

  • Jeong, Jihoon
    • 센서학회지
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    • 제27권6호
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    • pp.374-379
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    • 2018
  • The piezocomposite transducer is widely used because it is highly efficient in transforming electric energy into mechanical energy, and its frequency range is broader than that of other types of ultrasound transducers. A general piezocomposite transducer is composed of an acoustic lens, impedance matching layers, piezoelectric materials, and backing layers. When an input voltage is applied to a piezoelectric material as an active material, it generates sound waves while vibrating. At that time, an impedance matching layer helps the sound waves to propagate forward while reducing the impedance mismatch that may occur at the interface between the active material and its front material. The impedance mismatch has a negative effect on the signal of an ultrasound transducer; thus, it is important to design a matching layer to overcome the issue. In this study, an optimized feature of a matching layer with gradient properties is studied. An objective function is defined to minimize both the average and the deviation of the reflection coefficients that are functions of the frequencies. As a result, an improvement in the signal characteristics with respect to the sensitivity and bandwidth is reported.

말단질량을 갖는 탄성지지 균열보의 고유주파수와 임피던스 특성 연구 (A Study on the Characteristics of Natural Frequency and Impedance of Elastically Restrained Cracked Beam with a Tip Mass)

  • 이종원
    • 한국산학기술학회논문지
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    • 제21권11호
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    • pp.317-325
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    • 2020
  • 주요 시설물에 널리 이용되고 있는, 말단질량을 갖는 탄성지지 캔틸레버형 보의 구조적 안전성 확보를 위하여, 대표적 손상형태 중 하나인 균열의 발생 및 진전을 센서를 통하여 측정된 데이터를 이용하여 추정함으로써 건전성을 모니터링할 수 있는 기술개발이 필요하다. 균열탐지를 위하여 압전재료를 이용한 임피던스기법이 활발히 연구되고 있는데, 이러한 기존연구들은 주로 균열과 임피던스 신호와의 관련성을 손상지수를 이용하여 실험적으로 규명함으로써 손상을 추정하는 내용으로 판단된다. 본 연구는 말단질량을 갖는 탄성지지 캔틸레버형 보의 균열에 따른 임피던스 신호의 변화와 해석적으로 구한 균열보 고유주파수 변화의 상관성을 규명하기 위한 연구이다. 정확한 고유주파수 해석을 위하여 자유진동실험 결과를 이용하여 건전보에 대한 해석모델을 개선한 후, 캔틸레버형 보에 단계적으로 균열을 발생시키면서 임피던스 신호를 측정하고 이에 대한 손상지수를 제곱평균제곱근편차를 이용하여 구한다. 그 결과를 개선된 해석모델을 기반으로 산정한 균열보의 고유주파수와 비교함으로써 고유주파수와 임피던스 신호와의 상관관계를 규명한다. 실험적으로 구한 임피던스 손상지수와 해석적으로 구한 1차 및 2차 고유주파수의 손상전후 비율 간의 상관계수가 각각 0.924 및 0.928로써, 밀접한 상관관계를 가지는 것으로 알 수 있었는데, 이러한 상관성을 활용하면 임피던스기법 기반 손상추정의 결과로부터 구조물의 현재 상태에 대한 구조특성을 보다 정확히 평가할 수 있고, 해석모델을 이용하여 구조물의 거동을 효과적으로 예측할 수 있을 것으로 판단된다.

배전용 자기재 현수애자의 절연특성과 열화상 진단 (Insulation Characteristics and Thermography Diagnosis of Porcelain Insulators for the Distribution Systems)

  • 정종만;김동명;최명호
    • 전기학회논문지P
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    • 제60권4호
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    • pp.267-271
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    • 2011
  • The insulating characteristics and temperature rise behaviors of porcelain suspension insulators were investigated. The testing insulators had used in the distribution systems normally and were sampled. Firstly, leakage current was measured and its impedance was calculated. The leakage current of good insulators is 0.2 mA and its impedance is 66 $M{\Omega}$. The worse insulators have lower impedance and the insulators having below 15 $M{\Omega}$ take place flashover at the high frequency voltage flashover test. Secondly, the temperature rise characteristics were analyzed depending on leakage current and its impedance. Surface temperature of insulators was measured for 30 minutes and until its saturation after voltage was applied. The temperature rise of insulators having 15 $M{\Omega}$ is about $14.5^{\circ}C$ above the ambient temperature. Lastly, the heating behaviors of 3 insulators in a string was analyzed. Any insulator in the string does not generate heat so far as it has at least one sound insulator. On the other hand, all the insulators in the string are bad if the string have any heating insulator.

ITO/$Alq_3$/Al의 유기 발광 소자에서 $Alq_3$의 두께 변화에 따른 임피던스 특성 (Impedance characteristics with various $Alq_3$ thickness in ITO/$Alq_3$/Al organic light-emitting diodes)

  • 공두원;구자룡;김영관
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.477-478
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    • 2005
  • The devices with a structure of ITO/$Alq_3$/Al were fabricated and their impedance properties were analyzed. It is obtained that an effect of resistance $R_p$ of the device was dominant at the low frequency and the high voltage region, emitting region, and it is ignored at the high frequency region. Capacitance $C_p$ appears intensely in a range of all frequencies of non-emitting region, below turn on voltage.

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