• Solar Energy
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• v.12 no.2
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• pp.18-27
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• 1992

Multilayer coatings of $WO_3$ were deposited by the sol-gel technique on microscope slide glass and ITO coated glass. These films were characterized optically, chemically, and structurally by XRD, spectro-photometry, DTA/TGA, SEM/EDAX and RBS. Uniform $WO_3$ sol-gel films were dip coated on slide glass at dipping speed of 5mm/s. This sample indicated a low near IR transmittance in optical properties as a result of coloration using a dilute HCI electrolyte as the $H^+$ion sources. Differential thermal analysis results have allowed the accurate determination of the formation temperature of the $WO_3$ crystalline phase from the gel data in the range of $380^{\circ}C{\sim}500^{\circ}C$, consistent with crystallization temperature of sol-gel film. RBS spectrometry was performed on the uncolored $WO_3$ sol-gel film, yielding a chemical composition of $WO_3$.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.48-52
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• 1992

Indium tin oxide (ITO) layers are of considerable interest on account of the combination of properties they provide high electrical conductivity, high infrared reflection with high solar energy transmission, high transmission in the visible range. We are concerned about the variation of the spectral transmittances and sheet resistances as the thickness of SiO2-ZrO2 barrier layer and ITO layers and heat treating conditions are changed. Transmittances and reflectivities were studied by measuring UV-VIS-NIR-, FT-IR spectroscopy. ITO films are crack free, homogeneous and of polycrystalline cubic structure. The microstructure of good ITO films shows a narrow grain size distribution and mean value of 100 nm. The selectivity of absorbing properties is improved by increasing the thickness of ITO films. The increase of sheet resistance of ITO films are due to the increase in the reaction between films and glass substrate.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1315-1322
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• 1994

In this study, stable PbTiO3 coating solution was prepared using diethanolamine(DEA) complexing agent and deposited on indium-tin oxide(ITO) coated glass substrate. Prepared thin films were dense and crack-free. Perovskite-type PbTiO3 thin films could be obtained above 50$0^{\circ}C$, while the films heat-treated above $650^{\circ}C$ showed undesired properties due to interface reactions between films and substrates and warpage phenomena of substrates. Measured maximum dielectric constant and loss tangent were found to be 144 and 0.0163 at 1 kHz, 55$0^{\circ}C$ heat-treatment, respectively.

• Journal of the Korean institute of surface engineering
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• v.40 no.2
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• pp.98-102
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• 2007

[ $NiCl_2$ ] and poly-L-lysine coated protein chip plates have been fabricated using a spin coating system. Water has been used as solvent and scratching effects on glass slides and ITO have been investigated. We also observed the surface properties of $NiCl_2$ and poly-L-lysine coated slides by using PSA(Particle size analyzer) and AFM(Atomic force microscope). The AFM results imply that the surface patterns created in the spin coating system determine the protein adsorption. Adsorption of histidine-tagged KRS proteins immobilized on glass slides and ITO was analyzed using a BAS image system. The results suggest that the scratching effect was increased ability of protein adsorption.

• Korean Journal of Optics and Photonics
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• v.22 no.4
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• pp.170-178
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• 2011

The spectroscopic ellipsometric constants are analyzed to determine the thickness and the complex refractive index of a film coated on a semi-transparent substrate, with the reflection from the backside of the substrate properly considered. Expressions representing the effect of the backside reflection on ellipsometric constants are derived using the thickness and the complex refractive index of the substrate. The thickness and the complex refractive of an ITO thin film coated on a glass substrate are obtained by using this method. The results agree quite well with the ones obtained by following the conventional modeling procedure where the backside reflection is neglected during ellipsometric measurement and analysis.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1505-1507
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• 1996

In this study, $(Pb_{0.88}La_{0.12})(Zr_{0.40}Ti_{0.60})O_{2.97}$ (La/Zr/Ti=12/40/60) ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. PLZT stock solutions were made and spin-coated on the ITO-glass rubstrate at 4000[rpm] for 30[sec]. Coated specimens were baked to remove the organic materials at $400[^{\circ}C]$ for 10[min]. This procedure was repeated 5 times. The coated films were finally annealed at $450{\sim}700[^{\circ}C]$ for 1[hr]. The ferroelectric perovskite phases precipitated under the sintering of $550{\sim}700[^{\circ}C]$ for 1[hr]. Relative dielectric constant of the PLZT thin were increased with increasing the sintering temperature, the thin file sintered at $650[^{\circ}C]$ showed the highest value of 196. But in the PLZT thin film sintered at $700[^{\circ}C]$, relative dielectric constant was greatly decreased due to reacts between ITO electrode and glass substrate. In all thin films, the transmittance was more than 70[%] (at 632.8[nm]).

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.28-33
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• 2008

Lanthanum modified lead zirconate titanate ($Pb_{1.1}La_{0.08}Zr_{0.65}Ti_{0.35}O_3$) thin films were fabricated on indium doped tin oxide (ITO)-coated glass substrate by R.F magnetron sputtering method. The thin films were deposited at $500^{\circ}C$ and post-annealed with various temperature ($550-750^{\circ}C$) by rapid thermal annealing technique. The structure and morphology of the films were characterized with X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. The hysteresis loops and fatigue properties of thin films were measured by precision material analyzer. As the annealing temperature was increased, the remnant polarization value was increased from $10.6{\mu}C/cm^2$ to $31.4{\mu}C/cm^2$, and coercive field was reduced from 79.9 kV/cm to 60.9 kV/cm. As a result of polarization endurance analysis, the remnant polarization of PLZT thin films annealed at $700^{\circ}C$ was decreased 15% after $10^9$ switching cycles using 1MHz square wave form at ${\pm}5V$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.215-215
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• 2004

본 연구는 차세대 FPD의 소재로서 각광받고 있는 유기EL 의 제조공정을 위한 연구이다. 유기 EL 의 모재로서 이용되고 있는 ITO 코팅 유리는 그 표면의 정밀도에 따라서 제품의 불량률이 변화되게 됨으로 제조공정에 있어서는 매우 중요한 역할을 한다. 하지만, ITO 코팅유리의 표면 정밀도를 얻기 위하여 필수적인 연마공정 내에서 연마입자와 ITO 코팅유리의 상호작용에 의하여 연마가 이루어질 뿐 아니라, 불순물의 유입이나 기타 공정조건에 의하여 유리 표면 결함이 발생 및 불균일 연마가 수행되는 것은 피할수 없는 상황이다.(중략)

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.184-189
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• 2002

The electrical and optical properties of $(Pb_{0.91}La_{0.09})(Zr_{0.65}Ti_{0.35})O_3$(PLZT) thin films by MOCVD using ultrasonic spraying were investigated. To compensate the Pb loss by evaporation, 5 and 10 wt% of excess Pb was added to 0.2 M precursor. After deposition of films on ITO-coated glasses in oxygen atmosphere for 30 min, films were heated by in-situ RTA (rapid thermal annealing) method. When the films were heat treated at $600^{\circ}C$, perovskite single phase was obtained. The optical property of the film with 10 wt% excess Pb was excellent showing about 84 % of transmittance near 520 nm. The dielectric constant of the film was about 308 and the leakage current of the film was lower than the Pb excess 0, 5 wt% PLZT thin films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.60-66
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• 2001

($Ba_x$$Sr_{1-x}$)$TiO_3$ (x=0.9, 0.7, 0.5) thin films were prepared on ITO-coated glass by sol-gel method. Perovskite phase formation temperature of BST thin films seemed to be higher than $600^{\circ}C$. Peaks of perovskite phase shift to high diffraction angles as the Sr/(Ba+Sr) ratio was increased, due to the smaller ionic size of $Sr^{2+}$ than $Ba^{2+}$ . As a heating temperature was increased, the grain became coarser. And as Sr/(Ba + Sr) ratio was increased, the grain became finer. Dielectric constants of the BST(50/50) thin film are higher and dielectric losses of that are lower than those of the others. Dielectric constant and dielectric loss of the BST(50/50) thin film were 652 and 0.042 at 1kHz, respectively.