• Composites Research
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• 제24권5호
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• pp.17-22
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• 2011

최근 투명전극으로 주로 사용되고 있는 ITO 재료를 대체하가 위해 CNT를 이용한 투명전극의 활용 연구가 활발히 진행되고 있다. 본 연구에서는 건조온도에 따라 CNT와 ITO의 응집이 일어나는 정도가 달라진다는 점을 이용하여 표면을 조절하여 CNT 및 ITO가 코팅된 폴리에틸렌 테레프탈레이트 (PET)를 제조하였다. CNT를 ITO를 대신할 투명전극으로의 활용 가능성을 평가하면서, 표면의 물성 변화를 유도 하기 위해 코팅 후 건조온도를 $20^{\circ}C$, $80^{\circ}C$, 그리고 $120^{\circ}C$ 3단계로 나누어 표면을 관찰하였다. 전기저항측정법을 활용하여 재료의 내구성 및 전기적 물성을 평가함으로써 제조한 투명전극의 특성을 평가하였다. 전자현미경을 이용하여 건조온도에 따른 표면 변화를 관찰하였고, UV-스펙트럼을 통해 건조온도가 증가함에 따라 투과도가 변화하는 것을 확인하였다. 나노입자의 코팅 표면 조절에 따른 전기적 물성 변화를 확인하기 위해 순환전압전류법을 이용 하였다. CNT 코팅 표면의 내구성이 ITO 코팅 표면의 내구성보다 우수함을 알았다. 그리고, 건조온도가 높을수록 나노입자들의 응집이 크게 증가 하여 내구성이 우수한 코팅 표면을 만들며, 이에 따른 전기적 물성의 향상도 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.455-456
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• 2008

In this study, we report that an electrical properties of OLEDs was investigated by the surface etching method of ITO Layer. The electrical properties of OLEDs was measured by IVL and optical properties by EL spectrum. The fundamental structure of OLEDs was ITO anode/TPD(400$\breve{A}$)/$Alq_3(600\breve{A})$/LiF(5$\breve{A}$)/Al(1200$\breve{A}$) cathode. The threshold voltage was low value according to the low resistance of surface. The luminance was increased by decreased surface resistance.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.182-182
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• 2011

태양전지용 TCO로 사용되는 ITO 박막의 고온에서의 전기적 특성을 향상시키기 위하여 고온 안정성을 가지는 GZO/ITO 박막을 증착 하였다. GZO/ITO 박막의 특성은 버퍼 층인 ITO의 두께 및 구조에 의해 영향을 받는 것을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.411-412
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• 2008

We have studied a property change of organic light-emitting diodes (OLED) due to an indium tin oxide (ITO) surface reformation. The characteristics of OLED were improved by oxygen plasma processing of an ITO in this work. ITO is widely used as a transparent electrode in light-emitting devices, and the OLED device performance is sensitive to the surface properties of the ITO. The OLED devices with the structure of ITO/TPD(50nm)/$Alq_3$(70nm)/LiF(0.5nm)/Al(100nm) were fabricated, and the surface properties of ITO were investigated by using various characterization techniques. The oxygen plasma process of an ITO was processed by using RF power of 125W and oxygen partial pressure of $2\times10^{-2}$ Torr. The oxygen plasma processing of an ITO processed for 0/1/2/3/4min. Current-voltage-luminance characteristics of the devices show that turn-on voltage is 4V for 2min device and the luminance reaches about 27,000cd/$m^2$ for 4min device. The current efficiency shows that 3min device becomes saturated to be about 8cd/ A. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

• 한국표면공학회지
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• 제40권3호
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• pp.144-148
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• 2007

To prepare the transparent electrode for electronic devices such as flat panel or flexible displays, solar cells, and touch panels; tin doped $In_2O_3$ (ITO) films with low resistivity and a high transparency were fabricated using a facing target sputtering (FTS) system at the various oxygen gas flow rate. The carrier concentration and mobility of ITO films were measured by Hall Effect measurement. And the transmittance was measured using the UV-VIS spectrometer. As a result, we can obtain the ITO thin films prepared at 10% oxygen gas flow ratio, thickness 150 nm with transmittance 85% and resistivity $8.1{\times}10^{-4}{\Omega}cm$ and surface roughness 5.01 nm.

• 한국표면공학회지
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• 제41권5호
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• pp.214-219
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• 2008

Indium tin oxide (ITO) films were deposited on PET substrate by RF superimposed DC magnetron sputtering using ITO (doped with 10 wt% $SnO_2$) target. Substrate temperature was maintained below $750^{\circ}C$ without intentionally substrate heating during the deposition. The discharge voltage of DC power supply was decreased from 280 V to 100 V when superimposed RF power was increased from 0 W to 150 W. The electrical properties of the ITO films were improved with increasing of superimposed RF power. In the result of cyclic bending test, relatively high mechanical property was obtained for the ITO film deposited with RF power of 75 W under DC current of 0.75 A which could be attributed to the decrease of internal stress caused by decrease in both deposition rate and plasma impedance.

• 센서학회지
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• 제15권1호
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• pp.71-75
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• 2006

ITO (Indium Tin Oxide) thin films have been fabricated by rf magnetron sputtering with a target of a mixture $In_{2}O_{3]$(90 wt%) and $SnO_{2}$ (10 wt%). ITO films were sputtered with substrate temperature from 30 to $300^{\circ}C$ and working pressure from 1 to under 0.1 m Torr. ITO thin films surface morphology and electrical properties analyzed by SEM Photographs, and X-ray diffractions patterns. The resistivity of ITO thin films was $1.8{\times}10^{-5}{\Omega}/cm$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.511-514
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• 2000

This work aimed to develop ITO (Indium Tin Oxide) thin films ablation with a KrF Eximer laser required for the application in flat panel display, especially patterning into small geometry on a large substrate area. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/cm$^2$. And its value is much smaller than using third harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the damaged ITO is changed into dark brown and irradiated spot is completely isolated form the undamaged surroundings by laser light. The XPS analysis showed that the relative surface concentration of Sn and In were essentially unchanged (In :Sn=5:1) after irradiating Eximer laser. Using aluminium mask made by second harmonic Nd:YAG laser the ITO patterning is carried out.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.89-90
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• 2007

본 연구에서는 ITO/PEDOT:PSS/PFO-poss/LiF/Al 구조를 갖는 고분자 유기발광다이오드(PLED)를 제작하여 ITO 투명 전도막의 전처리 효과가 유기발광 다이오드의 특성에 미치는 영향에 대하여 조사하였다. 최적의 전처리 조건을 찾기 위하여 다양한 플라즈마 처리 조건에 다른 ITO 투명전도막의 표면형상의 변화와 전기적 특성을 관찰하였다. 또한 ITO 투명전도막에 플라즈마 처리와 열처리를 실시하여 PLED 소자를 제작하고 전기 광학적 특성을 조사하여 ITO 투명 전도막의 전처리가 소자의 특성에 미치는 영향을 조사하였다.

• 한국전기전자재료학회논문지
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• 제23권1호
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• pp.18-23
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• 2010

We demonstrated that the solution processed organic light-emitting diodes (OLEDs) have the high efficiency with pre-treated indium-tin-oxide (ITO). ITO surface was pre-treated with four methods and compared each other. The pre-treatment of ITO surface improves the chemical and physical characteristics of ITO such as the surface roughness, adhesion property, and the hole injection ability. These properties were analyzed by the contact angle, atomic force microscope (AFM) image, and the current flow character in device. As a results, the device with ITO pre-treated by $O_2$ plasma shows the current efficiency of 5.93 cd/A, which is 1.5 times the device without pre-treatment.