• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.516-519
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• 2011

Indium tin oxide (ITO) coatings were made using an ITO slurry and an ITO sol. This was achieved by dispersing nanosized ITO powder in a mixed solvent without any dispersant and developing an adhesive ITO sol from indium acetate and tin tetrachloride in a mixture of DMF and n-butanol. Coating was carried out in one step by spin coating an ITO slurry, which was then followed by an ITO sol over it. Here, the sol penetrates into the nano ITO particle layers to make them adhere to each other as well as to a glass substrate. This is then followed by sintering at 500$^{\circ}C$ for 1 h to produce a uniform film consisting of ITO particles of about 50 nm and 10 nm. ITO films were obtained with sheet resistances from 450 to 1500 ohm/${\Box}$ by varying spin speed and concentration. Transmittance is higher than 90% at 550 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.70-71
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• 2005

The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It is investigated the performance of ITO-CMP process using commercial silica slurry with the various conditioning temperatures by control of de-ionized water (DIW). Removal rate of ITO thin film was improved after CMP process after pad conditioning at the high temperature by improved exclusion of slurry residues in polishing pad..

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.479-480
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• 2006

The purpose of this paper is to investigate the relationship between CMP(Chemical Mechanical Polishing) characteristics of ITO thin film and friction signal by using the CMP monitoring system. Suba 400 pad and MSW2000 slurry of the Rohm & Haas Co. was used in this experiment to investigate the charateristics of ITO CMP. From this experiment, it is proven that the coefficient of friction is related to uniformity of the removal rate of the ITO thin film. Therefore, the prediction of polishing result would be possible by measuring friction signal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.216-220
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• 1994

Polycrystalline CdS films have been prepared by coating a slurry, which consisted of CdS, 11w% CdCl$_2$ and appropriate amount of propylene glycol, on glass substrate and glass substrate coated with indium tin oxide(ITO) followed by sintering in a nitrogen atmosphere. CdTe slurries consisting of Te powder and Cd powder were coated on the sintered CdS films and ITO/CdS films and were sintered in nitrogen to prepare sintered CdS/CdTe and ITO/CdS/CdTe solar cells. The value of fill factor increased due to low series resistance and open circuit voltage decreased due to low shunt resistance in the ITO/CdS/CdTe solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.539-539
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• 2008

본 논문에서는 투명전도박막의 균일한 표면특성을 확보하기 위해 광역평탄화 공정을 적용하여 투명전도 박막의 표면 거칠기를 연구하였으며 슬러리의 종류에 따른 박막의 연마특성을 연구하였다. 본 실험에서 사용된 ITO 박막은 RF Sputtering에 의해 제작되었고 하부 기판은 석영 Glass가 사용되었다. 광역평탄화를 위한 CMP 공정은 고분자 물질계열의 패드위에 슬러리입자를 공급하고 웨이퍼 캐리어에 하중을 가하며 웨이퍼의 표면을 연마하는 방법으로 가공물을 탄성패드에 누르면서 상대 운동시켜 가공물과 친화력이 우수한 부식액으로 화학적 제거를 함과 동시에 초미립자로 기계적 제거를 하는 것이다. ITO 박막의 평탄화를 위한 공정조건은 Polisher pressure 300 g/$cm^2$, 슬러리 유속 80 ml/min, 플레이튼속도 60 rpm으로 하였다. 위의 조건에 따라 공정을 진행 후 연마특성을 측정하였으며 이때 사용된 슬러리는 산화막에 사용되는 실리카슬러리와 금속연마용 슬러리인 EPL을 사용하였다. 연마율은 실리카 슬러리가 EPL슬러리에 비해 높음을 확인 하였다. CMP 공정에 의해 평탄화를 수행 할 경우 실리카슬러리와 EPL슬러리 모두 CMP전에 비해 돌출된 힐록들이 감소되었음을 알 수 있었다. 비균일도 특성은 모든 슬러리가 양호한 특성을 나타내었다. 평탄화된 박막의 표면과 거칠기 특성은 AFM(XE-200, PSIA Company) 을 이용하여 분석을 하였다.