• 한국광학회지
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• 제18권6호
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• pp.441-446
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• 2007

OLED 소자는 유리기판과 공기 층의 경계면에서 발생하는 전반사와 ITO-유기층으로 형성되는 광도파로를 따라 진행하는 도파모드 결합으로 인해 내부에서 생성된 빛의 80% 이상이 외부로 추출되지 못하게 된다. 본 연구에서는 마이크로 렌즈 어레이와 회절격자 레지스트 층을 이용하여 소자 내부에서 손실되는 빛을 외부로 추출시킴으로써 OLED의 발광효율을 향상시킨다. 마이크로 렌즈 어레이를 이용하여 유리기판-공기 전반사로 인해 내부에 갇히는 빛을 외부로 출력시키고, ITO 와 유기물 사이에 회절격자 레지스트 층을 삽입하여 ITO-유기층 광도파로에 갇힌 빛들을 수직방향으로 추출될 수 있도록 하였다. 제작된 OLED 소자에 전류밀도 $20mA/cm^2$를 인가한 경우, 마이크로 렌즈 어레이를 적용한 OLED에서 22%의 효율 개선을 얻었고, 회절격자 레지스트 층을 가지는 OLED 의 경우 41%의 효율개선을 얻을 수 있었다.

• 대한금속재료학회지
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• 제49권10호
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• pp.811-817
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• 2011

In this study, we have investigated the role of a metal oxide hole injection layer (HIL) between an Indium Tin Oxide (ITO) electrode and an organic hole transporting layer (HTL) in organic light emitting diodes (OLEDs). Nickel Oxide films were deposited at different deposition times of 0 to 60 seconds, thus leading to a thickness from 0 to 15 nm on ITO/glass substrates. To study the influence of NiO film thickness on the properties of OLEDs, the relationships between NiO/ITO morphology and surface properties have been studied by UV-visible spectroscopy measurements and AFM microscopy. The dependences of the I-V-L properties on the thickness of the NiO layers were examined. Comparing these with devices without an NiO buffer layer, turn-on voltage and luminance have been obviously improved by using the NiO buffer layer with a thickness smaller than 10 nm in OLEDs. Moreover, the efficiency of the device ITO/NiO (< 5 nm)/NPB/$Alq_3$/ LiF/Al has increased two times at the same operation voltage (8V). Insertion of a thin NiO layer between the ITO and HTL enhances the hole injection, which can increase the device efficiency and decrease the turn-on voltage, while also decreasing the interface roughness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.66-66
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• 2008

Most of the properties of ITO films depend on their substrate nature, deposition techniques and ITO film composition. For the display panel application, it is normally deposited on the glass substrate which has high strain point (>575 degree) and must be deposited at a temperature higher than $250^{\circ}C$ and then annealed at a temperature higher than $300^{\circ}C$ in order to high optical transmittance in the visible region, low reactivity and chemical duration. But the high strain point glass (HSPG) used as FPDs is blocking popularization of large sizes FPDs because it is more expensive than a soda lime glass (SLG). If the SLG could be used as substrate for FPDs, then diffusion of Na ion from the substrate occurs into the ITO films during annealing or heat treatment on manufacturing process and it affects the properties. Therefore proper care should be followed to minimize Na ion diffusion. In this study, we investigate the electrical, optical and structural properties of ITO films deposited on the SLG and the Asahi glass(PD200) substrate by rf magnetron sputtering using a ceramic target ($In_2O_3:SnO_2$, 90:10wt.%). These films were annealed in $N_2$ and air atmosphere at $400^{\circ}C$ for 20min, 1hr, and 2hrs. ITO films deposited on the SLG show a high electrical resistivity and structural defect as compared with those deposited on the PD200 due to the Na ion from the SLG on diffuse to the ITO film by annealing. However these properties can be improved by introducing a barrier layer of $SiO_2$ or $Al_2O_3$ between ITO film and the SLG substrate. The characteristics of films were examined by the 4-point probe, FE-SEM, UV-VIS spectrometer, and X-ray diffraction. SIMS analysis confirmed that barrier layer inhibited Na ion diffusion from the SLG.

• 전자공학회논문지 IE
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• 제44권2호
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• pp.21-25
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• 2007

본 논문에서는 표면저항을 이용한 차폐성능 및 다층박막의 광학설계 후, roll- to-roll DC 스퍼터링 공정을 이용하여 PET(Polyethylene terephtalate) 필름위에 투명 전도성 산화물 박막인 ITO와 금속을 다층박막 구조(Multilayer)로 균질하게 증착한 전파차폐필름을 1m 넓이로 제작하고 광투과 및 전파차폐특성을 조사하였다. 각 층의 면저항 및 두께에 따라서 전자파 차폐성능과 광투과도를 최적화 할 수 있도록 설계되었고, 그 조건에 따라 필름을 제작하였다. 제작된 전파차폐필름은 2-18GHz 대역에서 99.5%의 차폐성능을 나타내었으며, 400-700 nm에서의 전광선 투과율은 83.1%로 우수한 시인성과 전파차폐특성을 보유하였다.

• 한국전기전자재료학회논문지
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• 제23권11호
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• pp.896-900
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• 2010

Electrical properties of organic light-emitting diodes were studied in a device with 7,7,8,8-tetracyano-quinodimethane (TCNQ) to see how the TCNQ affects on the device performance. Since the TCNQ has a high electron affinity, it is used for a charge-transport and injection layer. We have made a reference device in a structure of ITO(170 nm)/TPD(40 nm)/$Alq_3$(60 nm)/LiF(0.5 nm)/Al(100 nm). And two types of devices were manufactured. One type of device is the one made by doping 5 and 10 vol% of TCNQ to N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) layer. And the other type is the one made with TCNQ layer inserted in between the ITO anode and TPD organic layer. Organic layers were formed by thermal evaporation at a pressure of $10^{-6}$ torr. It was found that for the TCNQ doped devices, turn-on voltage of the device was reduced by about 20 % and the current efficiency was improved by about three times near 6 V. And for devices with TCNQ layer inserted in between the ITO anode and TPD layer, it was found that the current efficiency was improved by more than three times even though there was not much change in turn-on voltage.

• 한국재료학회지
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• 제28권1호
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• pp.18-23
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• 2018

To study the impedance characteristics of a fluorescent OLED according to the device structure, we fabricated Device 1 using ITO / NPB / $Alq_3$ / Liq / Al, Device 2 using ITO / 2-TNATA / NPB / $Alq_3$ / Liq / Al, and Device 3 using ITO / 2-TNATA / NPB / SH-1:BD / $Alq_3$ / Liq / Al. The current density and luminance decreased with an increasing number of layers of the organic thin films in the order of Device 1, 2, 3, whereas the current efficiency increased. From the Cole-Cole plot at a driving voltage of 6 V, the maximum impedance values of Devices 1, 2, and 3 were respectively 51, 108, and $160{\Omega}$ just after device fabrication. An increase in the impedance maximum value is a phenomenon caused by the charge mobility and the resistance between interfaces. With the elapse of time after the device fabrication, the shape of the Cole-Cole plot changed to a form similar to 0 or a lower voltage due to the degradation of the device. As a result, we were able to see that an impedance change in an OLED reflects the characteristics of the degradation and the layer.

• 센서학회지
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• 제9권6호
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• pp.455-460
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• 2000

질산 아연, $Zn(NO_3)_2$, 수용액 속에서 전착에 의해 ITO 유리기판에 ZnO 박막을 성장하였다. 성장 매개 변수로 용액농도, 성장온도, 및 전착 전위를 선택하였으며, 성장된 박막은 SEM사진과 XRD 및 광흡수 계수 측정을 통해 연구되었다. 성장된 ZnO 박막은 육방정계 wurtzite 구조를 가지며, 질산아연 수용액농도가 0.1mol/liter, 성장온도 $60^{\circ}C$ 및 Ag/AgCl 기준전극에 대한 전위 -0.7V인 조건에서 양질의 ZnO 박막이 성장되었다.

• 대한금속재료학회지
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• 제48권4호
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• pp.363-368
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• 2010

N,N'-diphenyl-N,N'-bis(3-methylphenyl)1-1' biphenyl-4,4'-diamine (TPD) hole-transporting layers were deposited using a continuous slot-die coating method on ITO/PET flexible substrates. It is crucial that the substrates have a very smooth surface with a RMS roughness of less than 2 nm for the deposition of semiconductor nanocrystals or Quantum Dots. The parameters of the slot-die coating, including the solution concentration of the TPD, the gap between the slot-die and the substrates, and the coating speed were controlled in these experiments. To obtain full coverage of the TPD films on the ITO/PET substrates (40 mm wide and several meters long), the injection rates of the TPD solution were increased proportional to the coating speed of the flexible substrates. Additionally, the injection rates must be increased as the gap distance changes from 400 to 600 ${\mu}m$ at the same coating speed. A RMS surface roughness of less than 2 nm was obtained, in contrast to bare ITO/PET substrates, at 13 nm, as the coating speed and gap distance increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.43-46
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• 2002

We have investgated the photoisomerization using light irradiation 8A5H-phospholipid( L-$\alpha$-dimyristoylphosphatidylcholine[DMPC], L-$\alpha$-dilauroylphosphatidylcholine[DLPC]mixture LB film accumulated by monolayer on an ITO. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $NaClO_{4}$ solution at a variable concentration and variable number layers LB film. The scan rate was 100mV/s.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1422-1424
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• 2007

A simulation method has been purposed in this paper to optimize the stack structure of metal/ITO cathode for full transparent or top emission devices. The result demonstrates that the complexity of the two proper layers thicknesses design is reduced. Finally, the experiment data also strain the simulation result.