• Title/Summary/Keyword: ITO Deposition

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Electroless Deposition of ITO Thin Films (무전해침전법에 의한 투명전도박막 제작에 관한 연구)

  • ;邊潤植;李建基
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.2
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    • pp.238-241
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    • 1987
  • ITO thin film was prepared by the electroless deposition technique. ITO thin film had a high transmittance in the visible region and a high reflectance in the near infrared region. The energy gap of the thn film (Sn/Im=0.1) was 4.05 eV, the carrier concentration was 2x10**21 cm**-3, and the electric resistivity was 1.5x10**-3 ohm-cm. We confirmed that ITO thin film was a degenerated n-type semiconductor.

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Characteristics of amorphous indium tin oxide films on PET substrate grown by Roll-to-Roll sputtering system (저온 Roll-to-Roll 스퍼터 시스템을 이용하여 PET 기판위에 성막 시킨 ITO 박막의 전기적, 광학적, 구조적 특성)

  • Cho, Sung-Woo;Bae, Jung-Hyeok;Choi, Kwang-Hyuk;Moon, Jong-Min;Jeong, Jin-A;Jeong, Soon-Wook;Kim, Han-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.380-381
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    • 2007
  • This paper reports on the deposition conditions and properties of ITO films used as electrode layer in a organic light emitting diodes on a PET substrate. The deposition technique employed was specially designed roll-to-roll sputtering. The oxide was deposited at room temperature in an argon and oxygen plasma on a transparent conducting ITO layer on a PET film. The influence of deposition parameters such as DC power, working pressure and oxygen partial pressure has been investigated, in order to obtain the best compromise between a high deposition rate and adequate electro-optical properties. Electrical and optical properties of ITO films were analyzed by Hall measurement examinations with van der pauw geometry at room temperature and UV/Vis spectrometer analysis, respectively. In addition, the structural properties and surface smoothness were measured by x-ray diffraction and scaning electron microscopy, respectively. From optimized ITO films grown by roll-to-roll sputter system, good electrical$(6.44{\times}10^{-4}\;{\Omega}-cm)$ and optical(above 86 % at 550 nm) properties were obtained. Also, the ITO films exhibited amorphous structure and very flat surface beacause of low deposition temperature.

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Flexible Durability and Characteristics of ZnO, AZO and ITO Thin Films Grown by Aerosol Deposition Process (에어로졸 증착 공정으로 제조된 ZnO, AZO, ITO 박막의 특성과 유연 내구성)

  • Lee, Dong-Won;Cho, Myung-Yeon;Lee, Sang-Hun;Kim, Yong-Nam;Lee, Daeseok;Koo, Sang-Mo;Oh, Jong-Min
    • Journal of IKEEE
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    • v.21 no.4
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    • pp.404-407
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    • 2017
  • We investigated the microstructure, electrical and optical characteristics of ZnO, AZO and ITO films using aerosol deposition process. As gas consumption increased, the electrical and optical characteristics of ZnO, AZO and ITO films were improved, and electrical and optical characteristics of ZnO, AZO and ITO films with a thickness of 400 nm were successfully fabricated on PET substrates at room temperature. The mechanical flexibility durability test shows that the ZnO films can withstand 5,000 cycles and AZO and ITO films occurs to crack in films with degradation of resistance and transmittance. Even though the AZO and ITO films shows slightly lower durability than the ZnO films, this is expected to improve performance of films through optimized processing condition and particle size control.

Properties of Indium Tin Oxide Multilayer Fabricated by Glancing Angle Deposition Method

  • Oh, Gyujin;Lee, Kyoung Su;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.367-367
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    • 2013
  • Commercial applications of indium tin oxide (ITO) can be separated into two useful areas. As it is perceived to bear electrical properties and optical transparency at once, its chance to apply to promising fields, usually for an optical device, gets greater in the passing time. ITO is one of the transparent conducting oxides (TCO), and required to carry the relative resistance less than $10^{-3}{\Omega}$/cm and transmittances over 80 % in the visible wavelength of light. Because ITO has considerable refractive index, there exist applications for anti-reflection coatings. Anti-reflection properties require gradual change in refractive index from films to air. Such changes are obtained from film density or nano-clustered fractional void. Glancing angle deposition (GLAD) method is a well known process for adjusting nanostructure of the films. From its shadowing effects, GLAD helps to deposit well-controlled porous films effectively. In this study, we are comparing the reference sample to samples coated with controlled ITO multilayer accumulated by an e-beam evaporation system. At first, the single ITO layer samples are prepared to decide refractive index with ellipsometry. Afterwards, ITO multilayer samples are fabricated and fitted by multilayer ellipsometric model based on single layer data. The structural properties were measured by using atomic force microscopy (AFM), and by scanning X-ray diffraction (XRD) measurements. The ellipsometry was used to determine refractive indices and extinction coefficient. The optical transmittance of the film was investigated by using an ultraviolet-visible (UV-Vis) spectrophotometer.

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Screening of spherical phosphors by electrophoretic deposition for full-color field emission display application

  • Kwon, Seung-Ho;Cho, sung-Hee;Yoo, Jae-Soo;Lee, Jong-Duk
    • Journal of Korean Vacuum Science & Technology
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    • v.3 no.1
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    • pp.79-84
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    • 1999
  • the photolithographic patterning on an indium-tin oxide (ITO) glass and the electro-phoretic deposition were combined for preparing the screen of the full-color field emission display(FED). the patterns with a pixel of 400$\mu\textrm{m}$ on the ITO-glass were made by etching the ITO with well-prepared etchant consisting of HCL, H2O, and HNO3. Electrophoretic method was carried out in order to deposit each spherical red (R), green(G), and blue (B) phosphor on the patterned ITO-glass. The process parameters such as bias voltage, salt concentration, and deposition time were optimized to achieve clear boundaries. It was found that the etching process of ITO combined with electrophoretic method was cost-effective, provided distinct pattern, and even reduced process steps compared with conventional processes. The application of reverse bias to the dormant electrodes while depositing the phosphors on the stripe pattern was found to be very critical for preventing the cross-contamination of each phosphor in a pixel.

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A Study on Characteristics of Tin-doped Indium Oxide Film for Polyethersulfone Flexible Substrate by Low Temperature E Beam Deposition Process (저온 E Beam 증착 공정으로 제조된 폴리에테르설폰 유연기판용 ITO 필름 특성 연구)

  • Rhew, Ju-Min;Kang, Ho-Jong
    • Polymer(Korea)
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    • v.36 no.3
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    • pp.393-400
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    • 2012
  • The characteristics of indium tin oxide (ITO) thin film deposited on polyethersulfone (PES) film by low temperature E beam has been studied for the flexible photovoltaic devices. It was found that the substrate temperature in the deposition process affected the crystallization behavior of ITO during the post low temperature annealing process. Higher substrate temperature resulted in the increase of crystallinity of annealed ITO. Consequently, the lowering of sheet resistivity and better transmittance were obtained. Crystallization of ITO during the annealing process was facilitated by using oxygen gas in the deposition process and resulted in the enhancement on sheet resistivity and transmittance of ITO. The surface roughness of PES film prohibited the crystallization of ITO during the annealing process and it caused the increase of sheet resistivity and the decrease of transmittance of ITO.

Formation of ITO ohmic contact to $n^{+}$-InP for InP/lnGaAs HPT's fabrication (InP/AnGaAs HPT's 제작을 위한 $ITO/n^+$-InP Ohmic contact 특성 연구)

  • 황용한;한교용
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.213-216
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    • 2001
  • The use of a thin film of indium between the ITO and the $n^{+}$-InP contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. ITO/$n^{+}$-InP ohmic contact was successfully achieved by the deposition of Indium and thermal annealing. The specific contact resistance of about 6.6$\times$$10^{-4}$$\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to ITO/$n^{+}$-InP contact without the deposition of Indium between ITO and $n^{+}$-InP, it exhibited schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with that of InP/InGaAs HBTs with the opaque emitter contacts.

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A Study on Buffer Layer Design for Transmittance Improvement of Indium Tin Oxide (ITO 투과율 향상을 위한 Buffer층 설계에 관한 연구)

  • Ki, Hyun-Chul;Lee, Jeong-Bin;Kim, Sang-Ki;Hong, Kyung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.1
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    • pp.24-28
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    • 2010
  • We have proposed an Buffer layer to improve the transmittance of ITO. Here, $SiO_2$ and $TiO_2$ were selected as the Buffer layer coating material. The structures of Buffer layer were designed in ITO/$SiO_2/TiO_2$/Glass and ITO/Glass/$TiO_2/SiO_2$. Then, these materials were deposited by ion-assisted deposition system. Transmittances of deposited ITO were 86.14 and 85.07%, respectively. These results show that the proposed structure has higher transmittance than the conventional ITO device.

ITO/CNT Nano Composites as a Counter Electrode for the Dye-Sensitized Solar Cell Applications (ITO/CNT 나노 복합체의 염료감응형 태양전지의 이용)

  • Park, Jong-Hyun;Pammi, S.V.N;Jung, Hyun-June;Cho, Tae-Yeon;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.1
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    • pp.76-80
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    • 2011
  • The ITO/Cabon Nano Tube (CNT) nano composites were deposited by nano cluster deposition (ITO) and arc discharge deposition (CNT) on glass substrates. The structural, optical and photovoltaic performance of ITO/CNT nano composites as a counter electrode of dye-sensitized solar-cells (DSSCs) such films were investigated. At low temperature below $250^{\circ}C$, the ITO films deposited on CNT. The ITO/CNT nano composit showed a good optical and electrical property for the counter electrode of DSSCs. When the as-prepared ITO/CNT nano composites are used for the counter electrodes, the photovoltaic parameters are $V_{OC}$ = 0.69 V, $J_{SC}$ = 5.69 mA/$cm^2$, FF = 0.32, and $\eta$ = 0.53 %. The ITO/CNT nano composites showed the possibility for the counter electrode applications of DSSCs.

Effect of deposition method of source/drain electrode on a top gate ZnO TFT Performance

  • Kopark, Sang-Hee;Hwang, Chi-Sun;Yang, Shin-Hyuk;Yun, Young-Sun;Park, Byung-Chang
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.254-257
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    • 2008
  • We have investigated the effect of source/drain electrode deposition method on a performance of top gate structured ZnO TFT performance. TFT using S/D of ITO film, consisted of bi-layer which deposited by ion beam assisted sputtering at the initial stage then deposited by DC magnetron sputtering, showed better performance compared to that using S/D of ITO deposited by just DC magnetron sputtering. Two ITO films exhibited different grain shapes and these resulted in different etching properties. We also suspect that charge trapping on the glass substrate (back channel) during the ITO film deposition may influence the characteristics of top gate structured ZnO TFT.

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