• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.962-964
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• 1999

We studied emitting properties of devices fabricated using the spin-coating and Langmuir-Blodgett[LB] technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. Poly(3-hexylthiophene)[P3HT] LB films used as the emitting layer in light-emitting devices. LB monolayers were deposited 27 layers onto the indium-tin-oxide[ITO] as Y-type films by the vertical dipping method. The thickness is about 80nm. Absorption spectrum of LB films presented that P3HT is regiorandom conformation. Also, current-voltage-luminance characteristics and electroluminescence spectra of light-emitting devices fabricated by LB method is studied. In current-voltage-luminescence characteristics, turn-on voltage of P3HT LB film LEDs is higher than that of spin-coating LEDs. But electroluminescence spectrum is similar to the spin-coating LEDs. The orange-red light was clearly visible in a darkened room.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.541-544
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• 2004

Multi- wall carbon nanotubes(MWNTs) were synthesized by thermal chemical vapor deposition. The paste for screen printing was composed of MWNTs, organic vehicle and glass frit. Carton nanotube paste was screen-printed on ITO(indium tin oxide) deposited soda lim을 glass, and then heat treatment was performed. Before the surface treatment, turn on field of derive was 2.6 V/$\mu\textrm{m}$. After the surface treatment, the value was changed into 1.8 V/$\mu\textrm{m}$. The anode current of the derive with 2.83 V/$\mu\textrm{m}$(turn on field) was changed 4 $\mu\textrm{A}$ into 390 $\mu\textrm{A}$ at 1,700 V. Adsorption effect of MWNTs onto phosphor of anode plate was observed by the field emission measurement and resulted in bad effects on properties of devices lifetime and emission lighting.

• 한국표면공학회지
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• 제29권6호
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• pp.735-738
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• 1996

Amorphous nickelphthalocyanine(NiPc) thin films were prepared by vacuum evaporation and their electrochromic behavior and voltammograms were examined in the five kinds of aqueous electrolytes. Amorphous NiPc films were prepared on indium-tin-oxide(ITO) glass substrates cooled to-$120^{\circ}C$ by using liquid nitrogen under a vacuum of $2.4 \times 10^{-4}$. The voltammetric and electrochromic measurements were made using a potential galvanostat. In order to confirm the color change, optical vis-transmission spectra of the NiPc films were measured by a spectrophotometer with various electrode potential applied. The NiPc amorphous thin films exhibited most clearly electrochromism in $KNO_3$ aqueous electrolyte. The specimen films underwent 3 color transitions (from blue to yellow-green, then to red violet, then to dark blue), corresponding to the three peaks on the voltammograms in $KNO_3$ aqueous electrolyte. Blue is color of the as-prepared film. When the potential was swept, charge compensation was attained upon oxidation by injection of anions from the electrolyte and upon reduction by expulsion of anions.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.112-112
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• 2017

광학적 전기적 특성이 우수한 Indium Tin Oxide (ITO)는 대표적인 투명전극으로 사용되어지고 있다. 하지만 Brittle한 성질로 인해서 플렉서블한 디바이스에 적용하기에는 어려움이 있다. 이러한 문제를 해결하기 위해 본 연구에서는 용액 공정으로 제조 단가가 비교적 저렴하며, 높은 투과도와 전기전도 특성을 가지는 투명전극으로 주목받고 있는 차세대 투명전극인 AgNW에 관한 연구를 수행하였다. AgNW는 나노와이어가 네트워크를 형성하고 있어 높은 전도성과 광 투과도를 가지지만 용액 제조시에 분산에 용이하기 위해서 흡습성의 고분자 물질로 둘러싸여 있기 때문에 환경 안정성이 좋지 않다는 단점이 있다. 또한 나노와이어 간의 높은 접촉저항으로 인해서 접촉저항을 감소시키기 위한 후처리 공정이 요구되어진다. 이를 해결하기 위해 본 연구에서는 AgNW 전극에 플라즈마 처리를 통해서 나노와이어간의 접촉저항을 감소시켜 전기적특성이 약 12% 향상됨을 확인하였다. 고온, 고습 장시간 안정성테스트 결과, 기존 AgNW 전극에 비해서 플라즈마 처리와 보호막을 형성한 AgNW는 저항증가율이 3배 이상 감소하여 환경안정성이 향상된 것을 확인하였다. 이는 흡습성 고분자 물질이 플라즈마 처리에 의해 제거되었고 보호막을 형성하여 산소와의 반응을 감소시켰기 때문으로 판단된다. 플라즈마 처리와 보호막을 형성한 AgNW 전극을 적용하여 투명히터, Polymer Dispersed Liquid Crystal(PDLC)등 다양한 디바이스에 적용한다면 기존의 AgNW 전극보다 높은 효율을 기대할 수 있을 것이라 예상된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.287-287
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• 2010

We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.451-451
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• 2012

Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.276-276
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• 2011

진공증착법으로 ITO (indium-tin-oxide) 기판 위에 $AgGaSe_2$ 박막을 성장시켜 그 구조와 광학적 특성을 조사하였다. X-선 회절 분석에 의하여 살창상수는 a=5.97 ${\AA}$와 c=10.88 ${\AA}$이고, 황동광(chalcopyrite) 구조를 하고 있었으며, 그 성장 방향은 (112)방향으로 선택 성장됨을 알 수 있었다. 증착된 박막과 200~400$^{\circ}C$로 열처리한 박막의 실온에서 측정한 광학적인 에너지 띠 간격은 2.02 eV에서 2.28 eV까지 변하였다. 또한 열린회로로 구성되어 있는 시료의 표면에 광 펄스를 주입하여 표면에서 형성된 전하들의 거동을 광유기 방전 특성(PIDC) 방법을 이용하여 조사하였다. 초기전위 V0로 형성된 시료의 양단을 주행하는 운반자 농도, 전류밀도 및 전기장 효과를 관찰하여 운반자의 주행시간, 이동도 그리고 전하운반자 농도를 계산한 결과는 각각 42 ${\mu}s$~81 ${\mu}s$, $1.9{\times}10^{-1}\;cm^2/Vs$~$5.7{\times}10^{-2}\;cm^2/Vs$ 그리고 약 $6.0{\times}10^{17}/cm^3$~$2.0{\times}10^{18}/cm^3$이었으며, p-형 전도를 나타내었다. 원자 힘 현미경 실험으로 제곱평균제곱근 거칠기와 입계크기를 조사하였으며, X-선 광전자 분광실험으로 원소들의 결합상태를 관찰하였다.

• Journal of Information Display
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• 제5권4호
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• pp.12-17
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• 2004

A series of statistical random copolymers of dioctylfluorene (DOF) and 3,4-ethylenedioxythiophene (EDOT) were synthesized by Ni (0) mediated polymerization and their light-emitting properties were compared with poly (9,9-di-n-octylfluorene) (PDOF). The synthesized polymers were characterized using UV-vis spectroscopy, TGA, photoluminescence (PL) & electroluminescence (EL) spectroscopy and by conducting molecular weight studies. The resulting polymers were found to be thermally stable and readily soluble in organic solvents. The UV-visible absorption and PL emission spectra of the copolymers were gradually red-shifted as the fraction of EDOT in copolymers increased. Light-emitting devices were fabricated in an ITO (indium-tin oxide)/PEDOT/polymer/Ca/Al configuration. Interestingly, the EL spectra of these devices were similar to the PL spectra of the corresponding polymer film. However, the EL devices constructed from the copolymer showed more than 10 times higher efficiency level than the devices constructed from the PDOF homopolymer. This higher efficiency is possibly the result of better charge carrier balance in the copolymer systems due to the lower HOMO levels of the copolymers in comparison to that of PDOF homopolymer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집
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• pp.13-14
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• 2004

Using Se as a photoconductive element and ZnS as a luminescent element, a Se/ZnS thin film device for light amplifier applications was fabricated and its characteristics were investigated At various conditions of substrate temperatures, heat treatment times, and heat treatment temperatures, Se thin films and ZnS thin films were separately deposited by an EBE(Electron Beam Evaporation) method of an high accuracy in deposition rates and the optimum fabrication conditions for the Se thin film and the ZnS thin film with a hexagonal structure were obtained The Se/ZnS thin film light amplifier was fabricated by evaporating the ZnS thin film on an ITO(Indium Tin Oxide) glass and the Se thin film on the ZnS thin film in sequence.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.129-134
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• 2012

We analyzed the movement and response time of charged particles according to particle-inserting methods to understand the variation of quantity of q/m of charged particles, which is a very important factor in electrical and optical characteristics of the charged particle type display, such as lifetime, response time, contrast ratio, reflectivity, etc. For our study we used white and black charged particles of which diameter is $20{\mu}m$, prepared pieces of ITO(indium tin oxide) coated glass substrate, and formed ribs on the glass substrates. The width of a rib is $30{\mu}m$ and the cell size is $220{\mu}m{\times}220{\mu}m$. As the particle-inserting methods, the white and black charged particles were respectively inserted into a front and a rear panel with a very small electric field and also the mixture of the white and black charged particles were inserted into a rear panel. As a result of the driving characteristics of charged particles, the factors about variation of quantity of q/m according to the particle inserting method was experimentally demonstrate, showing very different driving voltage, response time, the particle movement, etc.