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http://dx.doi.org/10.4313/JKEM.2012.25.2.129

A Study on Driving Characteristics by Particle-inserting Method in Charged Particle Type Display  

Lee, Dong-Jin (Department of Electrical and Computer Engineering, The University of Seoul)
Kim, Young-Cho (Department of Electronic Engineering, Chungwoon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.2, 2012 , pp. 129-134 More about this Journal
Abstract
We analyzed the movement and response time of charged particles according to particle-inserting methods to understand the variation of quantity of q/m of charged particles, which is a very important factor in electrical and optical characteristics of the charged particle type display, such as lifetime, response time, contrast ratio, reflectivity, etc. For our study we used white and black charged particles of which diameter is $20{\mu}m$, prepared pieces of ITO(indium tin oxide) coated glass substrate, and formed ribs on the glass substrates. The width of a rib is $30{\mu}m$ and the cell size is $220{\mu}m{\times}220{\mu}m$. As the particle-inserting methods, the white and black charged particles were respectively inserted into a front and a rear panel with a very small electric field and also the mixture of the white and black charged particles were inserted into a rear panel. As a result of the driving characteristics of charged particles, the factors about variation of quantity of q/m according to the particle inserting method was experimentally demonstrate, showing very different driving voltage, response time, the particle movement, etc.
Keywords
Response time; CCA; Silica; Charged particle; q/m;
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Times Cited By KSCI : 1  (Citation Analysis)
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1 R. Hattrori, S. Yamada, Y. Masuda, and N, Nihei, Journal of the SID, 12, 175 (2004).
2 T. Kitamura, International Display Workshops, 06, 587 (2006).
3 B. H. Kim, S. W. Park, and Y. C. Kim, J. KIEEME, 22, 86 (2009).
4 D. J. Lee and Y. C. Kim, J. KIEEME, 22, 169 (2009).
5 C. W. Kim and Y. C. Kim, J. KIEEME, 23, 691 (2010).
6 D. J. Lee, I. S. Hwang, and Y. C. Kim, J. KIEEME, 21, 63 (2008).
7 D. J. Lee, R. E. Sloper, Y. H. Jeon, S. K. Han, S. Lee, K. H. Choi, W. S. Huh, and Y. C. Kim, SID Symposium Digest Tech. Papers, 11, 1523 (2011).
8 J. Heikenfeld, P. Drzaic, J. S. Yeo, and T. Koch, Journal of the SID, 19, 129 (2011).