• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.295-295
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• 2016

Recently, TCO films with low carrier concentration, high mobility and high work function are proposed beneficial as front electrode in HIT solar cell due to free-carrier absorption in NIR wavelength region and low Schottky barrier height in the front TCO/a-Si:H(p) interface. We report high transmittance and work function zirconium-doped indium tin oxide (ITO:Zr) films with various plasma (Ar/O2 and Ar) conditions. The role of (Ar/O2) plasma was to enhance the work function of the ITO:Zr films whereas the pure Ar plasma based ITO:Zr showed good electrical properties. The RF magnetron sputtered ITO:Zr films with low resistivity and high transmittance were employed as front electrode in HIT solar cells, yield the best performance of 18.15% with an open-circuit voltage of 710 eV and current density of 34.63 mA/cm2. The high work function ITO:Zr films can be used to modify the front barrier height of HIT solar cell.

• 대한화학회지
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• 제63권1호
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• pp.37-44
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• 2019

N,N'-bis(ethyldihydrogen phosphate)-1,4,5,8-naphthalene bis(dicarboximide) (EPNI) and N,N'-bis(ethyldihydrogen phosphate)-3,4,9,10-perylene bis(dicarboximide) (EPPI) and their zirconium bisphosphate multilayers (Zr-EPNI and Zr-EPPI), that had been briefly reported by us, were further investigated in terms of their electrochemical properties. EPNI in aqueous solution showed typical two reversible reductions at ITO electrode but the reductions were strongly dependent on solution pH while EPPI showed only an irreversible reduction. The single and mixed multilayers of Zr-EPNI and Zr-EPPI were well constructed on ITO electrode by the alternate adsorptions of zirconium ion and the bisimides. While Zr-EPNI multilayer on ITO electrode showed single broad reversible reduction with $E_{1/2}=-0.68V$, Zr-EPPI gave two separated reductions at $E_{1/2}=-0.54$ and -0.81 V vs SCE, quite differently from the solution properties. The average layer densities of the multilayers were estimated as $1.5{\times}10^{-10}$ and $2.3{\times}10^{-10}mol/cm^2$ for Zr-EPNI and Zr-EPPI, respectively. Both the monolayers of Zr-EPNI and Zr-EPPI could not completely block the electron transfer between $Fe(CN){_6}^{3-}$ in solution and ITO electrode but 3-5 layers of Zr-EPNI and Zr-EPPI could block it completely and mediated the one-way electron transfer at the potential shifted to their reduction potentials. When the monolayer of zirconium 1,10-decanediylbisphosphonate (Zr-DBP) was used as a sublayer of Zr-EPNI and Zr-EPPI layers, the mediated electron transfer became prominent without any direct electron transfer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.296-296
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• 2016

ITO films doped with a small amount of high-permittivity materials not only retain the basic properties of ITO films but also improve some of their properties. We report the highly conductive and transparent (ITO:Zr) films with various substrate (RT to 300oC) temperatures on glass substrate for the HIT solar cell applications. We observed a decrease in sheet resistance from 36 to $11.8{\Omega}/{\Box}$ with the increasing substrate temperature from RT to 300oC, respectively. The ITO:Zr films showed also lowest resistivity of $1.38{\times}10-4{\Omega}.cm$ and high mobility of 42.37cm-3, respectively. The surface and grain boundaries are improved with the increase of substrate temperature as shown by SEM and AFM surface morphologies. The highly conductive and transparent ITO:Zr films were employed as front electrode in HIT solar cell and the best performance of device was found to be Voc = 710 mV, Jsc = 33.70 mA/cm2, FF = 0.742, ${\eta}=17.76%$ at the substrate temperature of $200^{\circ}C$.

• 전자공학회논문지A
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• 제32A권7호
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• pp.77-84
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• 1995

We studied the effects of the Zr/Ti ration and the bottom electrode (Pt or ITO) on the electrical properties of PZT thin films prepared by sol-gel method. Their permittivities and tagent losses with the variation of frequencies were measured by the LCR meter and their maximum polarizations, remanent polarizations, and coercive fields were obtained from the hysteresis loops measured by the Sawyer-Tower circuit. For the PZT thin film of the Zr/Ti ration of 53/47, permittivity at 10kHz, coercive field, maximum and remanent polarizations ere measured as 952, 20.7kV/cm, 10.43${\mu}C/cm^{2}$ and 4.3${\mu}C/cm^{2}$, respectively. For the film of the Zr/Ti ration of 25/75, coercive field, maximum and remanent polarizations were measured as 33.12kV/cm, 5.59${\mu}C/cm^{2}$ and 1.5${\mu}C/cm^{2}$, respectively. For the film of the Zr/Ti ratio of 75/25, they were measured as 23.8kV/cm, 7.45${\mu}C/cm^{2}$, and 3.5${\mu}C/cm^{2}$, repectively. Our investigation into the effects of the lower electrode on the electrical properties of PZT films showed the following results. The permittivities of the PZT films deposited on the ITO electrode decreased more quickly than those of the PZT films on the Pt electrode. The tangent losses of the former films increased more quickly than those of the latter. These may be due to the degradation of the quality of the interface between the electrode and the film, which results from the diffusion of Pb. It is also noticeable that permittivities and tangent losses of the PZT films deposited on the ITO electrode varied differently with the Zr/Ti ratio. This may indicate that the quality of the interface between the electrode and the film changes with the Zr/Ti ration of the PZT film.

• 분석과학
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• 제5권1호
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• pp.135-142
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• 1992

태양열은 투과되고 인체 및 내부 열원에서 발생하는 적외선은 내부로 반사시키는 산화인듐 주석막은 수동 태양열 포집기로 사용되어 에너지 절약용 창유리로 활용된다. 졸겔 담금 코팅으로 제조된 산화 인듐 주석막의 선택 흡수 투과 특성의 막의 두께, 열처리 조건, 기판의 영향을 UV-VIS-IR spectroscopy를 이용하여 관찰하였다. 졸겔 담금 코팅막은 $500^{\circ}C$, 환원 분위기에서 열처리하면 고유의 산화 인듐 주석막이 형성된다. 알칼리 이온 확산 방지막은 $SiO_2-ZrO_2$막은 태양에너지 투과 효율을 증진시킨다. $SiO_2-ZrO_2/ITO$막은 태양 에너지의 투과를 유지시키고 파장 2700 nm 이상에서의 내부열 방출을 억제하여 에너지 절약 특성을 갖는다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.601-601
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• 2012

본 연구는 Zr이 doping된 ITO target (ITO:Zr)을 $200^{\circ}C$ 이하의 낮은 온도에서 RF magnetron sputtering을 이용한 증착으로 high mobility, high workfunction의 TCO 박막을 제작하고 이를 실리콘 이종접합 태양전지의 front TCO 적용에 관한 연구이다. 상기 공정으로 제작된 ITZO 박막의 가장 낮은 비저항은 $2.58{\times}10-4{\Omega}-cm$이며 이때의 투과도는 90%를 얻을 수 있었다. 또한 기존의 TCO로 사용되던 AZO 및 ITO보다 높은 work function으로 인하여 태양전지의 front TCO 적용시 710 mV 이상의 개방 전압 상승과 band-offset 감소에 따른 34.44 mA 이상의 단락전류 상승을 얻을 수 있었다. 또한 높은 mobility에 의한 면저항 감소로 충진률 상승도 얻을 수 있었다. 상기 인자에 대한 태양전지 특성의 변화는 quantum efficiency 분석으로 규명할 수 있었다.

• 한국세라믹학회지
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• 제29권1호
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• pp.48-52
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• 1992

Indium tin oxide (ITO) layers are of considerable interest on account of the combination of properties they provide high electrical conductivity, high infrared reflection with high solar energy transmission, high transmission in the visible range. We are concerned about the variation of the spectral transmittances and sheet resistances as the thickness of SiO2-ZrO2 barrier layer and ITO layers and heat treating conditions are changed. Transmittances and reflectivities were studied by measuring UV-VIS-NIR-, FT-IR spectroscopy. ITO films are crack free, homogeneous and of polycrystalline cubic structure. The microstructure of good ITO films shows a narrow grain size distribution and mean value of 100 nm. The selectivity of absorbing properties is improved by increasing the thickness of ITO films. The increase of sheet resistance of ITO films are due to the increase in the reaction between films and glass substrate.

• 한국안광학회지
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• 제3권1호
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• pp.21-25
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• 1998

Lead zirconate($PbZrO_3$, PZ) 박막의 광학적 성질을 조사하였다. 광학적 성질을 조사하기 위한 PZ 박막은 sol-gel 법으로 ITO glass 위에 제작되었다. 열처리온도 $T=700^{\circ}C$로 후열처리함에 의해 증착된 시료의 pyrochlore 상은 perovskite 상으로 변환되었다. 박막의 표면은 매우 평탄하였고, 투과율은 480~2000nm의 파장에서 60~80%였으며, 굴절률은 480~1000nm의 파장에 대하여 2.1~1.9 정도였다.

• 한국전기전자재료학회논문지
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• 제11권7호
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• pp.535-540
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• 1998

Thin films of PLZT were prepared on indium tin oxide(ITO) coated glass substrates by sol-gel process and annealed by rapid thermal annealing(RTA) at $750^{\circ}C$ for 5 minutes. The crystal structure of PLZT thin films were investigated for a different Zr mol% content. XRD results showed that the crystallographic structure was transitted from tetragonal to rhombohedral structure as Zr mol% increased. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권1호
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• pp.24-29
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• 2001

PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.