• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.351.2-351.2
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• 2014

Indium tin oxide (ITO) has a lot of variations of its properties because it is basically in an amorphous state. Therefore, the differences in composition ratio of ITO can result in alteration of electrical properties. Normally, ITO is considered as transparent conductive oxide (TCO), possessing excellent properties for the optical and electrical devices. Quantitatively, TCO has transparency over 80 percent within the range of 380nm to 780nm, which is visible light although its specific resistance is less than $10-3{\Omega}/cm$. Thus, the solar cell is the best example for which ITO has perfectly matching profile. In addition, when ITO is used as transparent conductive electrode, this material essentially has to have a proper work function with contact materials. For instance, heterojunction with intrinsic thin layer (HIT) solar cell could have both front ITO and backside ITO. Because each side of ITO films has different type of contact materials, p-type amorphous silicon and n-type amorphous silicon, work function of ITO has to be modified to transport carrier with low built-in potential and Schottky barrier, and approximately requires variation from 3 eV to 5 eV. In this study, we examine the change of work function for different sputtering conditions using ultraviolet photoelectron spectroscopy (UPS). Structure of ITO films was investigated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). Optical transmittance of the films was evaluated by using an ultraviolet-visible (UV-Vis) spectrophotometer

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.369-369
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• 2007

ZnO film has been investigated during several decades because it has excellent optical property like a transmittance among the range of visible light for using transparent conducting oxide (TCO) films. But ZnO film has not enough conductivity for applying to TCO devices. Therefore we synthesized platinum nanoparticles and they incorporated into ZnO due to improve the electrical property of ZnO film by sol-gel synthesis method. Also, we fabricated photosensitive ZnO thin film containing Pt nanoparticles by sol-gel process and spin-coating for using photochemical solution deposition. Photosensitive ZnO film could carry out the direct-pattern which allow the etching process to be convenient. The optical and electrical properties of ZnO film with or without various atomic percent of Pt nanoparticles annealed at various temperatures were investigated by using UV-Vis spectroscopy and 4-point probe method, respectively. We characterized the ZnO thin film containing Pt nanoparticles using X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.837-843
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• 2009

$TiO_2$(2 wt.%)-doped ZnO(TZO) films with thickness from 100 nm to 500 nm were prepared on polyethylene naphthalate(PEN) substrate under various rf-power range from 40 W to 80 W. Their electrical and optical properties were investigated as a function of rf-power. We think that these properties were closely related with the crystallization and the film density of TZO films. It was also presumed that the vaporization of the water vapor and other adsorbed particles such as an organic solvents can affect the electrical properties of the conventional transparent conductive oxide(TCO) films. On the other hand, since the TZO film deposited on glass substrate at room temperature with rf-power of 80 W shows a very low resistivity of $7.5\times10^{-4}\;\Omega{\cdot}cm$ and a very excellent transmittance over an average 85% in the visible range, that is comparable to that of ITO films. Therefore, we expect that the TZO films can be used as transparent electrode for optoelectronic devices such as touch-panels, flat-panel displays, and thin-film solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.170-174
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• 2023

Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.

• 한국IT서비스학회:학술대회논문집
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• 2005.05a
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• pp.125-133
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• 2005

정보시스템의 통합전산환경 구축 ${\cdot}$ 운영은 별도의 추가적인 예산이 소요될 뿐 아니라 관련 기관의 정보화업무 수행 프로세스 및 조직상의 변화를 초래할 수 있기 때문에 이에 따른 기대효과를 다양한 측면에서 적정하게 분석하는 것은 사업추진의 타당성 진단차원뿐 아니라 구축이후의 운영과정상에서 성과관리의 기준을 확보한다는 점에서 매우 중요한 의미를 지닌다고 볼 수 있다. 본 연구는 문화관광부의 소속기관 및 산하단체의 정보시스템 운영환경을 통합한 문화정보 통합센터의 구축 ${\cdot}$ 운영을 가정하여 그 기대성과를 분석하였으며, 첫째, 문화정보 통합센터 구축 ${\cdot}$ 운영에 따른 성과를 사업적 기대가치와 전략적 기대가치로 구분하여 분석하였고 둘째, 사업적 기대가치의 경우에도 균형성과표(BSC) 관점에서 핵심성공요인(CSF) 기법을 이용하여 정보화업무효율화성과, 조직혁신 및 발전제고 성과, 대민서비스 향상성과, 문화적 가치제고 성과 등 4가지 관점으로 범주화하여 성과를 분석하였다. 또한 셋째, 각 범주별 세부 성과평가 지표의 도출을 위한 정보화업무 효율화성과의 측정의 경우에는 TCO(Total Cost of Ownership) 관점에서 경제적 성과로 환산하여 측정하도록 하였으며, 아울러 정성적 측정지표의 개발도 병행하여 성과를 측정하였다. 본 연구의 주요 의의로는 통합전산환경 구축 ${\cdot}$ 운영의 기대성과를 균형성과표 및 핵심 성공요인 (CSF) 기법을 이용하여 합리적으로 분석하는 기법을 제시함과 아울러 TCO 기법을 접목한 경제성분석방법론을 제시하였다는 점이다.

• Journal of Digital Convergence
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• v.9 no.3
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• pp.213-223
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• 2011

Today, information resource management is key task in the data-centre as like as NCIA(National computing integration Agency of Korea). In IRM, the server's performance is one of the core elements, it must be importantly managed during whole of system life cycle. As first step of such management is in purchase phase, it is very important that the optimum specification is determined. The server's specification contains such as performance of core, criteria for performance verification, minimum cores, etc. There is constant controversy concerning the minimum cores. In this article, we present criteria for determination of the minimum cores that considered three aspects: (1) Costly aspect as TCO(Total Cost of Ownership, (2) Environmental aspect as Green IT (3) Technical aspect as RAS(Reliability, Availability, Serviceability) functionality. Finally, we propose scheme to ideally determinate the minimum cores.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.389-392
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• 2004

A new dithering algorithm, "Hi-FRC", to enable full (16,777,216) color display on LCD panel with 6-bit source D-IC's is presented. The conventional FRC can display only 16,194,277 colors. In addition, The LCD panel with Hi-FRC can meet the color grayscale linearity of TCO '03 because it can improve the color shift problem.

• Journal of Information Technology Services
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• v.6 no.3
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• pp.87-110
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• 2007

Recently, researches on IT Service Management (ITSM) for improving information system operation service and information system outsourcing cost estimation model are proliferating. This study suggests a new cost model of IT operation service and optimizing method based upon the characteristics of operation service as a long-term and continuous business service for both user's and service provider's point of view. This study explains the cost optimization model of IT operation service by improving service request management process, such as adequate reception and control, proper valuation, process management using project management methodology, effective organization and time management of service personnel. Especially in this study, service ability improvement effect and fixed operation cost reduction effect are defined to prove the proposed new cost model.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.167-167
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• 2010

Indium tin oxide (ITO) has been widely used as transparent conductive oxides (TCOs) for transparent electrodes of various optoelectronic devices, such as liquid crystal displays (LCD) and organic light emitting diodes (OLED). However, indium has become increasingly expensive and rare because of its limited resources. In addition, ITO thin films have some problems for OLED and flexible displays, such as imperfect work function, chemical instability, and high deposition temperature. Therefore, multi-component TCO materials have been reported as anode materials. Among the various materials, IZTO thin films have been gained much attention as anode materials due to their high work function, good conductivity, high transparency and low deposition temperature. IZTO thin films with a thickness of 200nm were deposited on Corning glass substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt%, ZnO 15 wt%, SnO2 15 wt%). We investigated the electrical, optical, structural properties of IZTO thin films. As the substrate temperature is increased, the electrical properties of IZTO are improved. All IZTO thin films have good optical properties, which showed an average of transmittance over 80%. These IZTO thin films were used to fabricate organic light emitting diodes (OLEDs) as anode and the device performances studied. As a result, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.168-168
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• 2010

Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.