• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.493-496
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• 1987

Theoretical analysis was performed to understand the sensing mechanism of pH-ISFET by using the site binding model. The calculated pH-${\varphi}$ relationship showed good fittings with the experimental results.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.12
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• pp.46-52
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• 1991

A new signal process circuit using two ISFETs as the input devices of the MOS differential amplifier stage for an ISFET biosensor has been developed. One chip integration of the newly developed signal process circuit, ISFETs and a Pt quasi-reference electrode has been carried out according to modified LOCOS p-well CMOS process. The fabricated chip showed gains of 0.8 and 1.6, good liniarity in the input-output relationship and very small power dissipation, 4mW. The chip was applied to realize a urea sensor by forming an immobilized urease membrane, using lift-off technique. on the gate of an ISFET. The urea sensor chip showed stable responses in a wide range of urea concentrations.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1551_1552
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• 2009

In this paper, we presented the packaging technologies of CMOS ISFET(Ion Sensitive Field Effect Transistor) pH sensor using post-CMOS process and MCP(Multi Chip Packaging). We have proposed and developed two types of packaging technology. one is one chip, which sensing layer is deposited on the gate metal of standard CMOS ISFET, the other is two chip type, which sensing layer is separated from CMOS ISFET and connected by bonding wire. These proposed packaging technologies would make it easy to fabricate CMOS ISFET pH sensor and to make variety types of pH sensor.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.517-518
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• 2008

Highly integrated ISFETs require the monolithic implementation of ISFETs, CMOS electronics, and additional sensors on the same chip This paper presents novel packaging type of CMOS ISFET pH sensor using standard CMOS FET chip and extended sensing membrane which is separated from CMOS FET. This proposed packaging type will make it easy to fabricate CMOS ISFET pH sensors

• Journal of Sensor Science and Technology
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• v.6 no.2
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• pp.131-136
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• 1997

The ISFET(ion sensitive field effect transistor), a semiconductor ion sensor, has many advantages over conventional ion sensors. Various single-sensor type ISFET pH-meters have been developed. However, they could not be applied in fields because their performances are directly affected by the sensor condition. With only one sensor, the system could be easily damaged from environmental factors, and reliability of it is decreased. Therefore, a 4-channel PH-meter system is proposed to improve the reliability of ISFET pH-meter. It has 4 ISFETS as ion sensor, and a software which contains a new calibration and measurement algorithm appropriate to the system. The reliability of the system was proved by measuring hydrogen ion concentration in the pH standard solutions and buffer solutions.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.31-38
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• 1998

Multi-channel sensors can be used to increase the reliability and remove the random iloise in ion-sensitive field effect transistors(ISFETs). Multi-channel sensors is also an essential step toward potential fabrication of sensors for several ionic species in one device. However, when the multi-channel sensors are separately biased, the biasing problems become difficult, that is to say, the bias circuit is needed as many sensors. In this work, a circuit for biasing the four pH-ISFETs in null-balance method, where bias voltages are switched, was proposed. The proposed concept is need only one bias circuit for the four sensors. Therefore it has advantages of smaller size and lower power consumption than the case that all sensors are separately biased at a time. The proposed circuit was tested with discrete devices and its performance was investigated. In the recent trend, sensor systems are implemented as portable systems. So the verified measurement circuit was integrated by using the CMOS circuit. Fortunately, ISFET fabrication process can be compatible with CMOS process. Full circuit has a mask area of $660{\mu}m{\times}500{\mu}m$. In the future, this step will be used for developing the smart sensor system with ISFET.

• Journal of Sensor Science and Technology
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• v.10 no.4
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• pp.259-265
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• 2001

FET-type dissolved oxygen sensor has the Pt working electrode around the pH-ISFET. Appling a voltage to the working electrode, the hydrogen ion which is proportional to the dissolved oxygen concentration occurs around the pH sensing gate and we can measure the dissolved oxygen concentration by detecting pH concentration through the pH-ISFET. In this paper, a dissolved oxygen measurement system using FET-type dissolved oxygen sensor array which adopt a specific algorithm to enhance the reliability has been developed and we compared its performance with the commercial dissolved oxygen measurement system.

• Applied Chemistry for Engineering
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• v.26 no.1
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• pp.116-119
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• 2015

Field-effect transistor (FET)-based ion or biosensors have been intensively studied so far. Among many measurement methods, the variation of the drain current can be induced when ions or biomolecules are interacted with sensing membranes located on the gate insulator of FET. One of typical FET-type sensors is an ion-sensitive field-effect transistor (ISFET) utilized in this study. In ISFET, the voltage is usually applied to the reference electrode instead of the gate voltage. Firstly, the voltage applied to the reference electrode versus the drain current was observed, and the steepest slope in this graph was found. Using this point, the optimized condition was established for the larger variation of the drain current in the saturated region in response to the variation of the input in the dynamic range.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.152-153
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• 2012

Ion sensitive field effect transistor (ISFET)는 전해질 속 각종 이온농도를 측정하는 반도체 이온 센서이다. 이 소자의 기본 구조는 metal oxide semiconductor field effect transistor (MOSFET)에서 고안되었으며 게이트 컨택 부분이 기준전극과 전해질로 대체되어진 구조를 가지고 있다 [1]. ISFET는 기존의 반도체 CMOS 공정과 호환이 가능하고 제작이 용이할 뿐만 아니라, pH용액에 대한 빠른 반응 속도, 비표지 방식의 생체물질 감지능력, 낮은 단가 및 소자의 집적이 용이하다는 장점을 가지고 있다. ISFET pH센서의 감지특성에 결정하는 요소 중 가장 중요한 것은 소자의 감지막이라고 할 수 있다. 감지막은 감지 대상 물질과 물리적으로 직접 접촉되는 부분으로서 일반적으로 기계적/화학적 강도가 우수한 실리콘 산화막(SiO2)이 많이 사용되어져 왔다. 최근에는 기존의 SiO2 보다 성능이 향상된 감지막을 개발하기 위하여 Al2O3, HfO2, ZrO2, 그리고 Ta2O5와 같은 고유전 상수(high-k)를 가지는 물질들을 EIS 센서의 감지막으로 이용하는 연구가 활발하게 진행되고 있다. 하지만 지속적인 high-k 물질들에 대한 연구에도 불구하고 각각의 물질이 갖는 한계점이 드러났다. 본 연구에서는 SOI기판에서 SiO2 /HfO2 (OH), SiO2/Al2O3 (OA) 이단 적층 그리고 SiO2/HfO2/Al2O3 (OHA) 삼단적층 감지막을 갖는 ISFET을 제작하고 각 감지막의 특성을 평가하였다. 평가된 특성의 결과가 아래의 표1에 요약되었다. 그 결과, 각 high-k 물질이 갖는 한계점을 극복하기 위하여 제안된 OHA감지막은 기존에 OH, OA가 갖는 장점을 취하면서 단점을 최소화 시키는 최적화된 감지막의 감지특성을 보였다.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.15-22
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• 1996

FET type $Ca^{2+}$ sensor(Ca-ISFET) was fabricated by micropool and photolithographic method utilizing photosensitive polymer as membrane materials. When OMR-83 negative photoresist was used as membrane material, it gave good sensitivity by micropool method with dioctyladipate as plasticizer but it could not be used in the photolithographic method. When poly(viny1 butyral), PVB was used as membrane material, it gave relatively high sensitivity ($23{\pm}0.2\;mV/decade$) for $Ca^{2+}$ concentration range of $10^{-4}{\sim}10^{-1}\;mole/{\ell}$ by photolithographic method. PVB also provided good adhesion to the pH-ISFET base device without adhesion promoter pretreatment and any plasticizer.