• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.50-51
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• 2009

This paper presents integrated passive device (IPD) based on Wilkinson power divider. The simulated 2-way power divider has the insertion loss of 3.123 dB, output isolation of -24.576 dB, input return loss of 26.415 dB, and output return loss of 33.478 dB. The power divider is based on IPD process design simulation at 2.5 GHz for WiMAX (Worldwide Interoperability for Microwave Access) applications. The chip size of power divider is $1\;\times\;1.2\;mm^2$, which is under fabrication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.406-407
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• 2009

In this paper, presents the Wilkinson power divider used integrated passive device (IPD) technology with excellent performance for personal communication services (PCS). The insertion loss of this power divider is 0.4 dB and the port isolation greater than 25 dB over the entire band. Return losses input and output ports are 18 dB and 19 dB, respectively. The power divider based on SI-GaAs substrate is designed within die size of about $0.775\times0.53\;mm^2$.

• Journal of electromagnetic engineering and science
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• v.9 no.1
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• pp.32-37
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• 2009

Various Class-E CMOS power amplifiers for GSM applications are presented. A stage-convertible transformer for a dual mode power amplifier is proposed to increase efficiency in the low-output power region. An integrated passive device(IPD) process is used to reduce combiner losses. A split secondary 1:2 transformer with IPD process is designed to obtain efficient and symmetric power combining. A quasi-four-pair structure of CMOS PA is also proposed to overcome the complexities of power combining.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.41-47
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• 2011

Currently, there is widespread adoption of silicon-based technologies for the implementation of radio frequency (RF) integrated passive devices (IPDs) because of their low-cost, small footprint and high performance. Also, the need for high speed data transmission and reception coupled with the ever increasing demand for mobility in consumer devices has generated a great interest in low cost devices with smaller form-factors. The UWB BPF makes use of lumped IPD technology on a silicon substrate CSMP (Chip Scale Module Package). In this paper, this filter shows 2.0 dB insertion loss and 15 dB return loss from 7.0 GHz to 9.0 GHz. To the best of our knowledge, the UWB band-pass-filter developed in this paper has the smallest size ($1.4\;mm{\times}1.2\;mm{\times}0.40\;mm$) while achieving equivalent electrical performance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.8 s.99
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• pp.783-789
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• 2005

In this paper, a novel design and implementation of a dual-band directional coupler based on RF IPD(Integrated Passive Device)-on-glass technology is proposed, which can be adopted in GSM/GPRS cellular phones for closed loop power control at the output of the power amplifier. The proposed coupler has a compensation capacitor to improve the directivity, and was designed using a new diplexing structure to minimize the cross-band isolation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.11
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• pp.1287-1293
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• 2008

Antenna switch module(ASM) for quad-band was developed. This module was integrated by RFIPD(RF integrated passive device) and transistor switch instead of LTCC-type device using low pass filters, diodes and passive elements in RF front end module for cellular phone. This module leads to low cost and miniaturization(The area is $5{\times}5\;mm$ and the thickness is 0.8 mm). The insertion loss and the return loss of each band were averagely measured as 1.0 dB(insertion loss), 15.1 dB(GSM/EGSM return loss) and 19 dB(DCS/PCS return loss), respectively.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2006.07a
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• pp.714-714
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• 2006

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.543-544
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• 2008

Nowadays, the research on the system integration using various technologies, like MCM-C, MCM-L and MCM-D. Especially, MCM-D technology is suitable for mmwave application due to its high resolution of patterning and thermal property similar to that of semiconductor devices. In this work, integrated passive devices like inductor, capacitor and resistor are evaluated on the GaAs substrate and their characteristics are examined. And finally, the Wilkinson power divider using lumped IPD are evaluated on GaAs substrate and it shows low insertion loss below 0.5 dB and the isolation over 15 dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.46-47
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• 2009

In this paper, a power combiner using IPD process for SK Telecom 3-Generation (2.13 ~ 2.15 GHz) application. The Integrated Passive Device (IPD) Wilkinson power Combiner shows compact size and high performance. It is simulated by 3D Electro Magnetic (EM) simulation because of more accurate measurement result wire-bonding effects. This combiner exhibit size of $1.2mm^2$ the insertion loss of 3.6 dB, and the return loss of 10.1 dB, and isolation of more than -7.7 dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.385-386
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• 2008

In this paper, a simple dual band filter chip is designed with 0603 case size using IPD technology. The dual-band filter achieves high frequency band at 2.5 GHz and low frequency band at 1.8 GHz. The insertion losses in high frequency band and low frequency band are -0.195 dB and -0.146 dB, respectively. The return losses in these bands are -22.7 dB and -22.8 dB, respectively. The simple dual-band filter based on SI-GaAs substrate is designed within die size of about 1.3 $mm^2$.