• Title/Summary/Keyword: IMD 측정

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Passive IMD Characteristics of RF Components in Contact Nonlinearity (접촉 비선형성의 변화에 따른 RF부품의 Passive IMD 특성)

  • 정석현;김진태;조인귀;정명영;이성재
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2000.11a
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    • pp.171-174
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    • 2000
  • 금속간 접촉에서의 Passive IMD는 Contact의 비선형 요인에 의해 발생된다고 알려져 있다. 금속접촉을 이루는 RF Conntctor의 PIMD 측정은 측정환경의 변화로 인해 재현성 있는 측정이 어렵다. 본 논문에서는 접촉력, 온도 및 습도로 인한 접촉조건의 변화에 의해 발생하는 PIMD 특성을 연구하고자 4 종류의 도금 재질을 갖는 어댑터를 설계 및 제작하였다. 제작된 어댑터의 PIMD 측정결과. PIMD 수준이 주로 접촉력 및 온도에 영향을 받으며, 측정환경의 명확한 규정이 PIMD의 측정 및 제어에 필수적임을 확인하였다.

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A study on Improving Intermodulaton Signal of the RF Power Amplifier Using Microwave Absorber (전파흡수체에 의한 전력증폭기의 혼변조 신호의 개선 효과에 관한 연구)

  • 양승국;전중성;김민정;예병덕;김동일
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2003.05a
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    • pp.92-96
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    • 2003
  • In this paper, 30 W power Amplifier for IMT-2000 repeater was developed gain flatness and the third IMD (Intermodulation distortion) by Microwave absorber. The absorption ability of the absorber is measured up to -10 ㏈ and -4 ㏈ at 3.6 ㎓, 2.3 ㎓ band respectively. Non using absorber power amplifier has the gain over 57 ㏈, the gain flatness of ${\pm}$0.33 ㏈ and the third IMD of 27 ㏈c at 33.3 W output. Otherwise, using absorber power amplifier has the gain over 58㏈, the gain flatness of less than ${\pm}$0.9, the third IMD over 29 ㏈c at the same output power. As a result, the characteristic of the different type show improvement of 1 ㏈ in gain, 0.3 ㏈ in Gain flatness and 1.77 ㏈c in IMD.

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Design and Fabrication of Amplifier Using Photonic Bandgap and Coplanar Waveguide (Photonic Bandgap과 Coplanar Waveguide를 이용한 증폭기의 설계 및 제작)

  • 윤진호;서철헌
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.26 no.12B
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    • pp.1754-1757
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    • 2001
  • In this paper, a R-band hybrid amplifier with the coplanar waveguide(CPW) and the photonic bandgap(PBG) structure is designed and fabricated. The PBG and the CPW techniques are simultaneously employed in amplifier to improve the power added efficiency(PAE) and the IMD(Intermodulation Distortion) in R-band. In this paper, the PBG structures are optimized to obtain matching network. The output impedance of amplifier and the input impedance of PBG are matched to minimize the return loss. The PAE and the IMD were improved 15% and 4.5dB compared with the conventional amplifier, respectively.

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W-CDMA 30 Watts High Power Amplifier Using Anti-Phase Intermodulation Distortion Linearization Technology (Anti-Phase IMD 선형화 기술을 이용한 W-CDMA 30 W 대전력 증폭기)

  • Kang, Won-Tae;Do, Ji-Hoon;Chang, Jeong-Seok;Hong, Ui-Seok
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.7
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    • pp.723-730
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    • 2007
  • This paper shows how the ACLR of power amplifier can be reduced by using Anti-phase IMD linearization technique which generate anti-phase IMD in the driver stage compare to output stage's IMD. And design process proposed. From the experimental result of W-CDMA 4FA input signal, this amplifier has ACLR -55 dBc@5 MHz offset at 30 watts average power. Compare to optimum matching technique to get maximum power gain, this technique has been improved ACLR by 12 dBc. Also this amplifier meets 50 watts average output power amplifier specification in domestic market.

Effective Measurement and modeling of memory effects in Power Amplifier (RF 전력 증폭기 메모리 효과의 효율적인 측정과 모델링 기법)

  • Kim, Won-Ho;HwangBo, Hoon;Nah, Wan-Soo;Park, Cheon-Seok;Kim, Byung-Sung
    • Proceedings of the KIEE Conference
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    • 2004.11c
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    • pp.261-264
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    • 2004
  • In this paper, we identify the memory effect of high power(125W) laterally diffused metal oxide-semiconductor(LDMOS) RF Power Amplifier(PA) by two tone IMD measurement. We measure two tone IMD by changing the tone spacing and the power level. Different asymmetric IMD is founded at different center frequency measurements. We propose the Tapped Delay Line-Neural Network(TDNN) technique as the modeling method of LDMOS PA based on two tone IMD data. TDNN's modeling accuracy is highly reasonable compared to the memoryless adaptive modeling method.

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Algorithm of Detecting Ground Fault by Using Insulation Monitoring Device(IMD) in Ungrounded DC System (직류 비접지계통에서 절연저항측정장치(IMD)를 이용한 사고검출 알고리즘)

  • Kim, Ki-Young;Lee, Hu-Dong;Tae, Dong-Hyun;Rho, Dae-Seok
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.21 no.9
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    • pp.528-535
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    • 2020
  • Recently, the protection coordination method of DC systems has been presented because renewable energy and distributed resources are being installed and operated in distribution systems. On the other hand, it is difficult to detect ground faults because there is no significant difference compared to a steady-state current in ungrounded IT systems, such as DC load networks and urban railways. Therefore, this paper formulates the detection principle of IMD (Insulation Monitoring Device) to use it as a protection coordination device in a DC system. Based on the signal injection method of IMD, which is analyzed by a wavelet transform, this paper presents an algorithm of detecting ground faults in a DC system in a fast and accurate manner. In addition, this paper modeled an IMD and an ungrounded DC system using the PSCAD/EMTDC S/W and performed numerical analysis of a wavelet transform with the Matlab S/W. The simulation results of a ground fault case in an ungrounded DC system showed that the proposed algorithm and modeling are useful and practical tools for detecting a ground fault in a DC system.

A study on Improving Intermodulation Signal of the RF Power Amplifier Using Microwave Absorber (전파흡수체에 의한 전력증폭기의 혼변조 신호의 개선 효과에 관한 연구)

  • Jeon, Joong-Sung;Kim, Min-Jung;Ye, Byeong-Duck;Kim, Dong-Il
    • Journal of Navigation and Port Research
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    • v.27 no.4
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    • pp.437-441
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    • 2003
  • In this paper, the 30 W power amplifier for an IMT-2000 repeater was developed a gain flatness and the third IMD (Intermodulation distortion) by microwave absorber. The absorption ability of the absorber is shown up to -10 dB and -4 dB at 3.6 GHz, 2.3 GHz band, respectively. The power amplifier without absorber has the gain over 57 dB, the gain flatness of $\pm$0.33 dB and the third IMD of 27 dBc at 33.3 W output. Otherwise, the power amplifier with absorber has the gain over 58 dB, the gain flatness of less than $\pm$0.9, the third IMD over 29 dBc at the same output power. As a result, the characteristic of the different type shows improvement of 1 dB in gain, 0.3 dB in gain flatness and 1.77 dBc in IMD.

Linear Characteristics Improvement of X-band TWT Amplifier for Satellite Communication with Linearizer (선형화기를 이용한 위성통신용 X-밴드 TWT 증폭기 선형특성 개선)

  • Choi, Won;Yang, Hong-Sun;Koo, Kyung-Heon
    • Journal of Advanced Navigation Technology
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    • v.15 no.5
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    • pp.789-794
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    • 2011
  • This paper has analyzed the AM-AM and AM-PM characteristics of 7.9 GHz~8.4 GHz X-band TWT used for satellite communication and improved its linearity and IMD performance by using linearizer. The TWT amplifier with the linearizer shows better AM-AM and AM-PM conversion, and has increased 1 dB compression point by 12.3 dB and $2.0^{\circ}/dB$ phase distortion point by 10 dB. The 3rd order intermodulation distortion, IMD3 is measured to be 37.0 dBc that is 16.2 dB improvement at the operating output. This paper also proposed the measurement method of IMD for high power amplifier, and that TWT amplifier can have better linearity and output power by compensating for the AM-PM characteristics.

A Study on the Output Signal Characteristics of Microwave Transistor (초고주파 트랜지스터의 출력 신호 특성에 관한 연구)

  • 박웅희;장익수;허준원
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.3
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    • pp.492-498
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    • 2000
  • When multi-carriers are applied to the high power amplifier(HPA) having nonlinear characteristics, the HPA output has unwanted IMD signals. The IMD signal is noise in the HPA. The magnitude and phase of the main and IMD signal of HPA output are changed as the input signal power is changed. If we know exactly the magnitude and phase characteristics of the main and IMD signal, we can design a more adequate linearizer and understand the characteristics of transistor. In this paper the magnitude and phase of the main and IMD signal of HPA output are measured and analyzed for variation of the input power.

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A Study of Passive Intermodulation Distortion on RF Connectors (RF 커넥터의 Passive IMD에 관한 연구)

  • 조인귀;이재화;안승호;최상국;정명영;최태구
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.2
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    • pp.268-277
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    • 2000
  • Nowadays, the interference between neighbor basestations is getting higher as mobile communication services expand, then the increase of the interference causes IMD(Intermolulation Distortion) problems for not only active devices but also passive devices. In this paper, we have designed and assembled several adapters having variable plating thickness and materials to analyze PIMD(Passive Intermodulation Distortion) mechanisms for coaxial cables which is one of the representative passive RF devices. The measurement results of the assembled adapters show that IM level depends on conductivity of plating materials, plating thickness, device structure, aging effect and so on. Furthermore, we have obtained PIMD mechanisms and some control methods of PIMD from the results.

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