• Title/Summary/Keyword: III-V solar cell

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A Brief Study on the Fabrication of III-V/Si Based Tandem Solar Cells

  • Panchanan, Swagata;Dutta, Subhajit;Mallem, Kumar;Sanyal, Simpy;Park, Jinjoo;Ju, Minkyu;Cho, Young Hyun;Cho, Eun-Chel;Yi, Junsin
    • Current Photovoltaic Research
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    • v.6 no.4
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    • pp.109-118
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    • 2018
  • Silicon (Si) solar cells are the most successful technology which are ruling the present photovoltaic (PV) market. In that essence, multijunction (MJ) solar cells provided a new path to improve the state-of-art efficiencies. There are so many hurdles to grow the MJ III-V materials on Si substrate as Si with other materials often demands similar qualities, so it is needed to realize the prospective of Si tandem solar cells. However, Si tandem solar cells with MJ III-V materials have shown the maximum efficiency of 30 %. This work reviews the development of the III-V/Si solar cells with the synopsis of various growth mechanisms i.e hetero-epitaxy, wafer bonding and mechanical stacking of III-V materials on Si substrate. Theoretical approaches to design efficient tandem cell with an analysis of state-of-art silicon solar cells, sensitivity, difficulties and their probable solutions are discussed in this work. An analytical model which yields the practical efficiency values to design the high efficiency III-V/Si solar cells is described briefly.

New Generation Multijunction Solar Cells for Achieving High Efficiencies

  • Lee, Sunhwa;Park, Jinjoo;Kim, Youngkuk;Kim, Sangho;Iftiquar, S.M.;Yi, Junsin
    • Current Photovoltaic Research
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    • v.6 no.2
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    • pp.31-38
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    • 2018
  • Multijunction solar cells present a practical solution towards a better photovoltaic conversion for a wider spectral range. In this review, we compare different types of multi-ijunction solar cell. First, we introduce thin film multijunction solar cell include to the thin film silicon, III-V material and chalcopyrite material. Until now the maximum reported power conversion efficiencies (PCE) of solar cells having different component sub-cells are 14.0% (thin film silicon), 46% (III-V material), 4.4% (chalcopyrite material) respectively. We then discuss the development of multijunction solar cell in which c-Si is used as bottom sub-cell while III-V material, thin film silicon, chalcopyrite material or perovskite material is used as top sub-cells.

Terminal Configuration and Growth Mechanism of III-V on Si-Based Tandem Solar Cell: A Review

  • Alamgeer;Muhammad Quddamah Khokhar;Muhammad Aleem Zahid;Hasnain Yousuf;Seungyong Han;Yifan Hu;Youngkuk Kim;Suresh Kumar Dhungel;Junsin Yi
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.5
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    • pp.442-453
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    • 2023
  • Tandem or multijunction solar cells (MJSCs) can convert sunlight into electricity with higher efficiency (η) than single junction solar cells (SJSCs) by dividing the solar irradiance over sub-cells having distinct bandgaps. The efficiencies of various common SJSC materials are close to the edge of their theoretical efficiency and hence there is a tremendous growing interest in utilizing the tandem/multijunction technique. Recently, III-V materials integration on a silicon substrate has been broadly investigated in the development of III-V on Si tandem solar cells. Numerous growth techniques such as heteroepitaxial growth, wafer bonding, and mechanical stacking are crucial for better understanding of high-quality III-V epitaxial layers on Si. As the choice of growth method and substrate selection can significantly impact the quality and performance of the resulting tandem cell and the terminal configuration exhibit a vital role in the overall proficiency. Parallel and Series-connected configurations have been studied, each with its advantage and disadvantages depending on the application and cell configuration. The optimization of both growth mechanisms and terminal configurations is necessary to further improve efficiency and lessen the cost of III-V on Si tandem solar cells. In this review article, we present an overview of the growth mechanisms and terminal configurations with the areas of research that are crucial for the commercialization of III-V on Si tandem solar cells.

Solar Cells - the Energy Source for Earth & the beginning of Space Exploration (태양전지-지구 에너지원이자 우주항해의 시작)

  • Han, Il Ki
    • Vacuum Magazine
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    • v.1 no.4
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    • pp.4-9
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    • 2014
  • About 170 years has been passed since the concept of photovoltaic has been suggested by French physicist Alexandre-Edmond Becquerel. Now the highest efficiency of solar cell has reached up to 44% by III-V multi-junction solar cells with concentrator. Those multi-junction solar cells are suitable as energy source for spaceships. On the other hand, the cell efficiency of solar cell for electric power generation as energy source for Earth has is going to be saturated although commercial solar cell efficiency is around 20%. In the part 1 of this article, the history of III-V multi-junction solar cells which have been adapted for spaceships is explained and in the part 2, new approach for the improvement of cell efficiency is suggested as the energy source for Earth.

A Study on Fabrication and Properties of the GaAs/Si Solar Cell Using MOCVD (MOCVD를 이용한 GAs/Si 태양전지의 제작과 특성에 관한 연구)

  • Cha, I.S.;Lee, M.G.
    • Solar Energy
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    • v.18 no.3
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    • pp.137-146
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    • 1998
  • In this paper, the current status of manufacturing technologies for GaAs/Si solar cell were revived and provied new MOCVD. In the manufacturing process of GaAs/Si solar cells and an experiment to get the high efficiency GaAs solar cells, we must investigate the optimum growth conditions to get high quality GaAs films on Si substrates by MOCVD. The GaAs on Si substrates has been recognized as a lightweight alternative to pure substrate for space applicaton. Because its density is less the half of GaAs or Ge.So GaAs/Si has twofold weight advantage to GaAs monolithic cell. The theoretical conversion efficiecy limit of tandem GaAs/Si solar cell is 32% under AM 0 and $25^{\circ}C$ condition. It was concluded that the development of cost effective MOCVD technologies shoud be ahead GaAs solar cells for achived move high efficiency III-V solar cells involving tandem structure.

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Texturing Effects on High Efficiency Silicon Buried Contact Solar Cell (전극 함몰형 고효율 실리콘 태양전지에서의 texturing 효과)

  • 지일환;조영현;이수홍
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.05a
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    • pp.172-176
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    • 1995
  • Schemes to trap weakly absorbed light into the cell have played an important role in improving the efficiency of both amorphous and crystlline silicon solar cells. One class of scheme relies on randomizing the direction of light within the cell by use of Lambertian(diffuse)surfaces. A second class of scheme relies on the use fo well defined geometrical features to control the direction of light wihin the cell, Widly used geometrical features in crystalline silicon solar cells are the square based pyramids and V-shaped grooves formed in (100) orientated surfaces by intersecting(III) crystallographic planes exposed by anisotropic etching. 18.5% conversion efficiency of Buried Contact Solar Cell with pyramidally textured surface has been achieved. 18.5% efficiency of silicon solar cell is one the highest record in the world The efficieny of cell without textured surface was 16.6%, When adapting textured surface to the Cell, the efficiency has been improved over 12%.

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Potential Wide-gap Materials as a Top Cell for Multi-junction c-Si Based Solar Cells: A Short Review

  • Pham, Duy Phong;Lee, Sunhwa;Kim, Sehyeon;Oh, Donghyun;Khokhar, Muhammad Quddamah;Kim, Sangho;Park, Jinjoo;Kim, Youngkuk;Cho, Eun-Chel;Cho, Young-Hyun;Yi, Junsin
    • Current Photovoltaic Research
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    • v.7 no.3
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    • pp.76-84
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    • 2019
  • Silicon heterojunction solar cells (SHJ) have dominated the photovoltaic market up till now but their conversion performance is practically limited to around 26% compared with the theoretical efficiency limit of 29.4%. A silicon based multi-junction devices are expected to overcome this limitation. In this report, we briefly review the state-of-art characteristic of wide-gap materials which has played a role as top sub-cells in silicon based multi-junction solar cells. In addition, we indicate significantly practical challenges and key issues of these multi-junction combination. Finally, we focus to some characteristics of III-V/c-Si tandem configuration which are reaching highly record performance in multi-junction silicon solar cells.