• Proceedings of the KIPE Conference
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• 1997.07a
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• pp.309-313
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• 1997

The SIV(Static InVerter) of the electric coach mainly consists of GTO type inverter. But, it is the drawback that GTO type inverter must have the complicated driving circuits. Recently, appearing the IGBT of high speed switching frequency, simple driving circuits, relative large capacity, GTO type inverter is changed IGBT type inverter. In this paper, IGBT type SIV substituting for the existing GTO type SIV is designed and producted. The experimental results are presented to verify the performance of the designed IGBT type SIV.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.1
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• pp.34-41
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• 1999

A three-level ZCT(Zero Current Transition) IGBT inverter is presented for high power IGBT inverters. The concept of ZCT for the conventional boost converter is extended to the three-level inverter. Moreover, in order to improve the reliability of inverter, midpoint charge balance problem of the three-level inverter is analyzed with respect 150kw, 20kHz prototype are presented to verify the principle of ZCT Operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.359-359
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• 2010

IGBT(Insulated Gate Bipolar Transistor) 란 MOS(Metal Oxide Silicon) 와 Bipolar 기술의 결정체로 낮은 순방향 손실(Low Saturation)과 빠른 Speed를 특징으로 기존의 Thyristor, BJT, MOSFET 등으로 실현 불가능한 분양의 응용처를 대상으로 적용이 확대 되고 있고, 300V 이상의 High Power Application 영역에서 널리 사용되고 있는 고효율, 고속의 전력 시스템에 있어서 필수적으로 이용되는 Power Device이다. IGBT는 출력 특성 면에서 Bipolar Transistor 이상의 전류 능력을 가지고 있고 입력 특성 면에서 MOSFET과 같이 Gate 구동 특성을 갖기 때문에 High Switching, High Power에 적용이 가능한 소자이다. 반면에, Conventional IGBT는 MOSFET과 달리 IGBT 내부에 Anti-Parallel Diode가 없기 때문에 Inductive Load Application 적용시에는 별도의 Free Wheeling Diode가 필요하다. 그래서, 본 논문에서 별도의 Anti-Parallel Diode의 추가 없이도 Inductive Load Application에 적용 가능한 RC IGBT를 적용하여 600V/15A급 Three Phase Inverter Module을 제안 하고자 한다.

• Transactions of the Korean hydrogen and new energy society
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• v.26 no.2
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• pp.184-191
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• 2015

As the power electronics system increases the frequency, the power loss and thermal management are paid more attention. This research presents a real time model of dissipation power with junction temperature response for 120kw IGBT inverter which is applied to the thermal management of high power IGBT inverter. Since the computational time is critical for real time simulation, look-up tables of IGBT module characteristic curve are implemented. The power loss from IGBT provides a clue to calculate the temperature of each module of IGBT. In this study, temperature of each layer in IGBT is predicted by lumped capacitance analysis of layers with convective heat transfer. The power loss and temperature of layers in IGBT is then communicated due to mutual dependence. In the dynamic model, PWM pulses are employed to calculation real time IGBT and diode power loss. Under Matlab/Simulink$^{(R)}$ environment, the dynamic model is validated with experiment. Results showed that the dynamic response of power loss is closely coupled with effective thermal management. The convective heat transfer is enough to achieve proper thermal management under guideline temperature.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.118-121
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• 1999

In this pager, we studies IGBT VVVF inverter for 1C4M propulsion system of railway traction. This inverter is consisted in inverter stack, DB unit, and control unit. To prove performance of inverter carry out combine test. This test verifies that performance of inverter is excellent.

• Proceedings of the KIPE Conference
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• 2004.07a
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• pp.402-405
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• 2004

In this paper, the parallel operation of the IGBT and power stack for easy capacity enlargement series in the medium power capacity inverter system of the 660V voltage class is described. The parallel operation of the IGBT and power stack for 1.5MVA medium power inverter system's design is applied. The results of the parallel operation are described in this paper. The designed stack capacity for parallel operation is 800kVA class. For 1.5MVA inverter system, the 800kVA stack is applied with 2 parallel configurations. The 800kVA stack is designed with 3 parallel configurations of the IGBT Module. In this paper, the feasibility for easy capacity enlargement series in the medium power inverter by applying the parallel operation of the IGBT and power stack is verified. The experimental results show the good characteristics for the parallel operation of the IGBT and power stack.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.215-225
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• 1994

In this paper, a performance evaluation of different current regulators for induction motor drive systems fed by IGBT inverter is presented. The twoparts of current regulation are considered : current error compensation part, voltage modulation part. The characteristics of hysteresis, synchronous PI, decoupled PI, predictive, deadbeat and stage feedback controllers are analyzed and the steady-state performances and transient responses of current regulation are well compared through the simulation and experimental results.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.152-159
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• 2018

In this paper, a novel topology of two-level voltage-type inverter is proposed. The proposed inverter has three bridge arms while each bridge is made up of two thyristors, one IGBT and four diodes. Thyristors complete the phase positioning of the inverter, IGBT completes the modulation of different modulation modes such as SPWM, SVPWM, and SHPWM, and the diodes complete the commutation of the bridge arms. Compared to the traditional voltage-type inverter with six IGBTs, the proposed voltage-type inverter using three IGBTs can achieve the same function with highly reduced cost. The principle of the proposed two-level inverter is explained in detail. The simulation and experiment results demonstrate the performance and effectiveness of the proposed inverter-type inverter.

• Journal of the Korean Society for Railway
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• v.3 no.1
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• pp.1-11
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• 2000

In this paper, the IGBT VVVF inverter for 1C4M propulsion system of railway traction is studied. The inverter is consisted of IGBT stacks, a DB unit, and a control unit. The test results of the combined system is given, which shows an excellent performance of the overall system.

• The Transactions of the Korean Institute of Power Electronics
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• v.5 no.5
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• pp.515-521
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• 2000

This paper describes the field test results of IGBT VVVF inverter for the railway propulsion system. The 1,650kVA IGBT VVVF inverter has been developed. Therefore, the field test is performed in SMG 6 Line to confirm its the reliability and performance. The train consists of 4M4T and the electrical equipment for field test are as follows : VVVF inverter 4 sets, 16 traction motors and 2 SIVs. The propulsion system is composed with 1C4M(1-Controller 4-Motors). The results of propulsion system which have the excellent acceleration/deceleration and the jerk characteristics as well as starting ability on slope are taken through the field test.